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Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation 利用电子和光子辐照改善薄膜对半导体和氧化物的附着力
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90238-7
J. Gazecki, G.A. Sai-Halasz , R.G. Elliman , A. Kellock, G.L. Nyberg, J.S. Williams
{"title":"Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation","authors":"J. Gazecki,&nbsp;G.A. Sai-Halasz ,&nbsp;R.G. Elliman ,&nbsp;A. Kellock,&nbsp;G.L. Nyberg,&nbsp;J.S. Williams","doi":"10.1016/0378-5963(85)90238-7","DOIUrl":"10.1016/0378-5963(85)90238-7","url":null,"abstract":"<div><p>The adhesion enhancement of evaporated metal films on silicon and silicon dioxide substrates following electron and photon irradiation has been investigated. It is shown that an electric field applied across the metal-oxide-semiconductor interface during electron irradiation has a dramatic influence on adhesion enhancement. For photon irradiation, comparative adhesion measurements were undertaken as a function of increasing metal film thickness and different irradiation doses, for photon energies &lt;4, &lt;6 and 10.2 eV. Metal-oxide-semiconductor structures were also biased during photon irradiation to indicate the role of secondary processes such as charge flow to the interface from the oxide. Results indicate that adhesion enhancement can be significant even if the metal film thickness exceeds the photon penetration depth, supporting the view that low-energy secondary excitations are responsible for the stronger bonding configurations. It was also concluded that both electron and photon irradiation give rise not only to increased adhesion but also to increased cohesion within the metal film.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1034-1041"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90238-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89210542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies Fe/MgO(001)模型催化剂:电子显微镜和光谱研究
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90195-3
R.A. Hubert, J.M. Gilles
{"title":"Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies","authors":"R.A. Hubert,&nbsp;J.M. Gilles","doi":"10.1016/0378-5963(85)90195-3","DOIUrl":"10.1016/0378-5963(85)90195-3","url":null,"abstract":"<div><p>An ultrathin iron film deposited on a MgO single crystal in UHV is heated up to 500°C. AES/LEED measurements combined with TEM observations performed on small single crystal platelets show that the film is transformed into small particles below 300°C. Around 380°C, surface diffusion induces a spectacular growth of some particles. Upon further heating, the evolution of the system depends on the shape of the particles. In most cases, the particles become square and orient themselves along the MgO(110) direction (epitaxial configuration); however, they are unstable: they progressively dissolve in the MgO matrix, leading to a substitutional (Mg<sub><em>x</em></sub>Fe<sub>1−<em>x</em></sub>)O solid solution. In other cases, the iron particles remain shapeless and stable, suggesting that dissolution only occurs when the particles grow epitaxially.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 631-637"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90195-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78411746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The role of hydrogen and boron in a-SiH : B—Electronic and optical properties 氢和硼在a-SiH: b中电子和光学性质的作用
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90224-7
N. Savvides
{"title":"The role of hydrogen and boron in a-SiH : B—Electronic and optical properties","authors":"N. Savvides","doi":"10.1016/0378-5963(85)90224-7","DOIUrl":"10.1016/0378-5963(85)90224-7","url":null,"abstract":"<div><p>Measurements of electrical conductivity and optical constants of thin films of a-SiH : B produced with varying hydrogen concentration (<em>C</em><sub>H</sub> = 0–30 at%) and boron concentration (<em>C</em><sub>B</sub> = 0.1–10 at%) are used to investigate the effects of increasing hydrogenation and doping on the density of states (DOS) of the a-Si network. There exist strong and abnormal dependences of electronic properties on <em>C</em><sub>H</sub> and <em>C</em><sub>B</sub> which correlate with increasing topological disorder of the a-Si network. For undoped films, concentrations of hydrogen up to 15 at% lead to a general decrease in the density of defect and band-tail states, a redistribution of valence band states, and a widening of the optical gap. A hydrogen content &gt; 15 at% leads to increasing density of localized dangling-bond type states and deep-lying valence band states suggesting substantial topological disorder.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 916-924"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90224-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78323085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of hydrogen pressure on the deposition of amorphous silicon films by tetrode RF sputtering 氢压力对四极射频溅射沉积非晶硅薄膜的影响
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90222-3
Yasuo Gekka, Hiroshi Asai, Tsuyoshi Temma, Yoh-ichi Yasumura
{"title":"Effect of hydrogen pressure on the deposition of amorphous silicon films by tetrode RF sputtering","authors":"Yasuo Gekka,&nbsp;Hiroshi Asai,&nbsp;Tsuyoshi Temma,&nbsp;Yoh-ichi Yasumura","doi":"10.1016/0378-5963(85)90222-3","DOIUrl":"10.1016/0378-5963(85)90222-3","url":null,"abstract":"<div><p>Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of quartz substrates using the tetrode RF sputtering technique. The conditions for film deposition were controlled by changing the pressure ratio of hydrogen to argon gas, ξ, in the atmospheric gas. We studied the dependence of the optical and electrical properties of deposited films on ξ, and discuss the complex changes of optical absorption coefficient, α, and electrical conductivity, σ, at <span><math><mtext>ξ ≧ 20%</mtext></math></span> in terms of the silicon-hydrogen configuration from the results of infra-red absorption and SEM measurements.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 899-907"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90222-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87885672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Comparison of properties of thin films of CuInSe2 and its alloys produced by evaporation, RF-sputtering and chemical spray pyrolysis 蒸发、射频溅射和化学喷雾热解制备CuInSe2薄膜及其合金的性能比较
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90197-7
J.J. Loferski, C. Case, M. Kwietniak , P.M. Sarro , L. Castaner , R. Beaulieu
{"title":"Comparison of properties of thin films of CuInSe2 and its alloys produced by evaporation, RF-sputtering and chemical spray pyrolysis","authors":"J.J. Loferski,&nbsp;C. Case,&nbsp;M. Kwietniak ,&nbsp;P.M. Sarro ,&nbsp;L. Castaner ,&nbsp;R. Beaulieu","doi":"10.1016/0378-5963(85)90197-7","DOIUrl":"10.1016/0378-5963(85)90197-7","url":null,"abstract":"<div><p>This paper summarizes a six-year research program aimed at preparation and characterization of thin films of the chalcopyrite semiconductor CuInSe<sub>2</sub> suitable for photovoltaic solar cells and other semiconductors devices. The thin film deposition methods used were evaporation, flash evaporation, RF-sputtering and chemical spray pyrolysis. Problems with producing films of reproducible properties by these methods are discussed. Gaps in our knowledge of the dependence of the opto-electronic properties of CuInSe<sub>2</sub> crystals and films on structural defects and other imperfections are pointed out.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 645-655"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90197-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85011713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
The growth mode of Cu overlayers on Pd(100) Pd(100)上Cu覆层的生长方式
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90186-2
H. Asonen, C. Barnes, A. Salokatve, A. Vuoristo
{"title":"The growth mode of Cu overlayers on Pd(100)","authors":"H. Asonen,&nbsp;C. Barnes,&nbsp;A. Salokatve,&nbsp;A. Vuoristo","doi":"10.1016/0378-5963(85)90186-2","DOIUrl":"10.1016/0378-5963(85)90186-2","url":null,"abstract":"<div><p>The growth mode of Cu deposits on clean Pd(100) has been studied by means of LEED. AES and angular resolved ultraviolet photoemission spectroscopy. Auger signal versus deposition time curves showed that the growth follows a layer-by-layer mode for two monolayers after which it involves formation of islands as in the Stranski-Krastanov model. Despite the large lattice mismatch between Cu and Pd (7.7%) the substrate p(1×1) LEED pattern persisted with clear distinct spots at least up to the equivalent coverage of 4 ML indicating that Cu starts to grow epitaxially with the Pd lattice constant (pseudomorphic growth). Photoemission results show that the spectrum of the Cu/Pd(100) system does not converge to that of bulk Cu(100) until about 65 ML equivalent coverage. The spectrum below that coverage is composed of separate contributions from the thick regions and from the pseudomorphic basic slab.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 556-564"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90186-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83811594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Characteristics of moisture-sensitive Ta2O5/TiO2 ceramic films 水敏Ta2O5/TiO2陶瓷膜的特性
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90216-8
Tatsuo Yamamoto, Hiromi Shimizu
{"title":"Characteristics of moisture-sensitive Ta2O5/TiO2 ceramic films","authors":"Tatsuo Yamamoto,&nbsp;Hiromi Shimizu","doi":"10.1016/0378-5963(85)90216-8","DOIUrl":"10.1016/0378-5963(85)90216-8","url":null,"abstract":"<div><p>This paper reports on the degradation characteristics of moisture-sensitive Ta<sub>2</sub>O<sub>5</sub>/TiO<sub>2</sub> ceramic films, whose electrical capacitances change with relative humidity. The fabrication process and the capacitance characteristics of the tested samples are described. The durability tests against the temperature and humidity cycle and against 10 ppm CO or SO<sub>2</sub> gas in the atmosphere have been carried out. In order to examine the interaction between water molecules and toxic gases on the ceramic surface, the electrical capacitance and resistance changes are investigated using the samples placed in a vacuum containing traces of CO or SO<sub>2</sub> gas to which pure water is subsequently added. Finally, possible physicochemical effects on the electrical characteristics of the ceramic films are proposed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 827-838"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90216-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85478476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-process model of PSEE from scratched metals 刮伤金属PSEE的两过程模型
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90068-6
Hidemi Shigekawa, Shin-ichi Hyodo
{"title":"Two-process model of PSEE from scratched metals","authors":"Hidemi Shigekawa,&nbsp;Shin-ichi Hyodo","doi":"10.1016/0378-5963(85)90068-6","DOIUrl":"10.1016/0378-5963(85)90068-6","url":null,"abstract":"<div><p>When photoillumination is interrupted, the exoelectron emission from scratched metal samples decays quickly. When the illumination is resumed, however, the recovered exoelectron emission shoots up to a value significantly higher than before and then decreases gradually - a fact overlooked by previous researchers. To explain this “storage effect” in PSEE (photo- stimulated exoelectron emission), the authors have proposed a model, according to which there are two excitation processes competing during PSEE; one is the photoexcitation of the electrons at energy levels within the band gap of surface oxide layers, and the other is the tunneling transition of electrons in bulk metals to occupy the vacant levels of the oxide layers. From the rate equations based on this model and also from the PSEE data obtained for scratched aluminum and zinc, three kinds of quantities, i.e., the number of exo-active sites, the emission rate from the sites and the rate of activating exo-inactive sites, are successfully estimated. Other PSEE phenomena such as the peculiar emission intensity versus time profiles can also be elucidated in view of this model.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 361-368"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90068-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81846031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge state fractions of sputtered Ni 溅射镍的电荷态分数
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90045-5
H.-J. Barth, E. Mühling, W. Eckstein
{"title":"Charge state fractions of sputtered Ni","authors":"H.-J. Barth,&nbsp;E. Mühling,&nbsp;W. Eckstein","doi":"10.1016/0378-5963(85)90045-5","DOIUrl":"10.1016/0378-5963(85)90045-5","url":null,"abstract":"<div><p>Energy distributions of sputtered Ni ions and neutrals were measured at non-normal incidence of Ne and Ar ions. Only the Ni particles sputtered in a binary collision can be used for the determination of the charge state fractions. Monte Carlo simulations (TRIM SP) were used for the absolute calibration of the total intensity in the binary recoil peak. The charged fractions are found to be less than 10% for energies below 5 keV. The positive fraction is about one order of magnitude larger than the negative and the doubly charged fractions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 136-144"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90045-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91196452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Off-specular and out-of-plane vibrational electron energy loss spectra of benzene and pyridine adsorbed on Pt(110) 苯和吡啶在Pt(110)上吸附的非镜面和面外振动电子能量损失谱
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90071-6
G.L. Nyberg, S.R. Bare, P. Hofmann, D.A. King, M. Surman
{"title":"Off-specular and out-of-plane vibrational electron energy loss spectra of benzene and pyridine adsorbed on Pt(110)","authors":"G.L. Nyberg,&nbsp;S.R. Bare,&nbsp;P. Hofmann,&nbsp;D.A. King,&nbsp;M. Surman","doi":"10.1016/0378-5963(85)90071-6","DOIUrl":"10.1016/0378-5963(85)90071-6","url":null,"abstract":"<div><p>The VEEL spectra of benzene, deuterobenzene, and pyridine adsorbed on Pt(110) at room temperature have been examined in emission planes both coincident with and orthogonal to the plane of incidence. The inelastic peak intensities are found to be almost independent of angle in both directions. This implies that neither of the established mechanisms, nor others presently examined, is an adequate description of the scattering. It also leads to a reassignment of the benzene spectrum.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 392-403"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90071-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91511687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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