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Applications of Surface Science最新文献

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The contribution of kinetic nucleation theories to studies of Volmer-Weber thin film growth 动力学成核理论对Volmer-Weber薄膜生长研究的贡献
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90182-5
B.F. Usher
{"title":"The contribution of kinetic nucleation theories to studies of Volmer-Weber thin film growth","authors":"B.F. Usher","doi":"10.1016/0378-5963(85)90182-5","DOIUrl":"10.1016/0378-5963(85)90182-5","url":null,"abstract":"<div><p>Extensive study of the vapour deposition of noble metals onto UHV cleaved alkali halide crystal surfaces has made an important contribution to the development of time-dependent nucleation theory. There nevertheless remain significant inconsistencies between results obtained from different studies of identical systems. The role which the time-dependent kinetic approach to nucleation theory has played in the past and that which it might take in the future are discussed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 506-511"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90182-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90953095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
SEM alloyed AuGeNi ohmic contacts to GaAs SEM alloyedGe在既ohmic接触GaAs摄氏度
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90236-3
A.G. Nassibian, T.S. Kalkur
{"title":"SEM alloyed AuGeNi ohmic contacts to GaAs","authors":"A.G. Nassibian,&nbsp;T.S. Kalkur","doi":"10.1016/0378-5963(85)90236-3","DOIUrl":"10.1016/0378-5963(85)90236-3","url":null,"abstract":"<div><p>A scanned electron beam from a commercial SEM is used for the localized alloying of vacuum evaporated AuGeNi contacts on n-type GaAs. The contact quality is studied for metallization thickness, 450–1350 Å, for furnace and electron beam alloyed contacts. For the electron beam alloyed method, the contact resistivity decreases with increasing metallization thickness and remains constant for thicknesses above 750 Å. Scanning electron microscopy and electron microprobe analysis shows that electron beam alloyed contacts undergo less redistribution of contact constituents than furnace alloyed contacts. The stability of the contacts is determined by high temperature ageing.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1019-1026"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90236-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86859240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Anisotropic etching during negative ion resputtering 负离子溅射过程中的各向异性蚀刻
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90042-X
Russell Messier, Daniel J. Kester
{"title":"Anisotropic etching during negative ion resputtering","authors":"Russell Messier,&nbsp;Daniel J. Kester","doi":"10.1016/0378-5963(85)90042-X","DOIUrl":"10.1016/0378-5963(85)90042-X","url":null,"abstract":"<div><p>Negative ion resputtering leads to a nonuniform erosion of material which can result in a wide range of morphological features. These various surface structures are a consequence of focused bombardment processes which are highly sensitive to sputtering system geometry and preparation parameters. The continuous manner in which the features are connected leads to a clearer understanding of each.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 111-117"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90042-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85116260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Amorphous silicon solar cells produced by a DC magnetron glow discharge technique 用直流磁控管辉光放电技术制备非晶硅太阳能电池
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90221-1
D.R. McKenzie , G.B. Smith
{"title":"Amorphous silicon solar cells produced by a DC magnetron glow discharge technique","authors":"D.R. McKenzie ,&nbsp;G.B. Smith","doi":"10.1016/0378-5963(85)90221-1","DOIUrl":"10.1016/0378-5963(85)90221-1","url":null,"abstract":"<div><p>The production of amorphous silicon solar cells using deposition from a DC magnetron glow discharge is described. The cells have the p-i-n structure with indium tin oxide front contacts. Fill factors of 40% and overall solar efficiencies of around 1.2% were obtained. Investigations were carried out to determine the reasons for deficiencies in the carrier collection efficiency. The cell efficiency was increased by increasing the μτ product of the i-layer. The spectral dependences of carrier collection efficiency, open circuit voltage and fill factors were determined. Comparison with published theoretical models of similar cells showed that for the best cells, surface recombination effects limited the efficiency. Argon used in the p-layer deposition was the most likely cause of these effects.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 891-898"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90221-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80176197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Surface compositions of the two phases of differently prepared Ni-Cr-Al and Ni-Cr-Al-Zr samples 不同制备的Ni-Cr-Al和Ni-Cr-Al- zr样品的两相表面组成
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90050-9
M.M. El Gomati, M. Prutton, R.H. Roberts
{"title":"Surface compositions of the two phases of differently prepared Ni-Cr-Al and Ni-Cr-Al-Zr samples","authors":"M.M. El Gomati,&nbsp;M. Prutton,&nbsp;R.H. Roberts","doi":"10.1016/0378-5963(85)90050-9","DOIUrl":"10.1016/0378-5963(85)90050-9","url":null,"abstract":"<div><p>The surface compositions of the α/β and γ/γ' phases of different metallographic preparations of Ni-15Cr-24Al and Ni-15Cr-24Al-0.3Zr (at%) alloys are presented. Surfaces investigated include a mechanically polished surface for both alloys, a mechanically polished acid etched surface of the Ni-Cr-Al-Zr both before heating and after heating to 600°C for several hours, and the underlying surface of this latter sample exposed by ball cratering. Both phases of all surfaces considered show depletion of Al. It is concluded that the Al depletion is not an artefact of the sample metallographic preparation or the analytical procedure. This is supported by analysis of the composition of a sample scratched in situ under UHV. It is further concluded that the Al depletion is due to oxidation during bakeout. Cr-rich features in both the α/β and γ/γ' phases are reported. An optimal two dimensionally smoothed Cr Auger image is presented showing these features which are considered to be due to the αCr solid solution particles or clustering of these particles in the α/β phase and the Ni solid solution component in the γ/γ' phase.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 184-192"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90050-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86819138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Some properties of Si(111) and Ge(111) cleaved surfaces at low temperatures 低温下Si(111)和Ge(111)切割表面的一些性质
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90032-7
V.A. Grazhulis, V.F. Kuleshov
{"title":"Some properties of Si(111) and Ge(111) cleaved surfaces at low temperatures","authors":"V.A. Grazhulis,&nbsp;V.F. Kuleshov","doi":"10.1016/0378-5963(85)90032-7","DOIUrl":"10.1016/0378-5963(85)90032-7","url":null,"abstract":"<div><p>Low-temperature experimental results on Ge(111) and Si(111) surfaces prepared by crystal cleavage in ultra-high vacuum (∼ 10<sup>-10</sup> Torr), liquid N<sub>2</sub>, and liquid He are presented and briefly discussed. Some of these results are reanalyzed and new interpretations are suggested.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 14-24"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90032-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90942605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Some strategies for quantitative scanning Auger electron microscopy 定量扫描俄歇电子显微镜的一些策略
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90046-7
R. Browning , D.C. Peacock, M. Prutton
{"title":"Some strategies for quantitative scanning Auger electron microscopy","authors":"R. Browning ,&nbsp;D.C. Peacock,&nbsp;M. Prutton","doi":"10.1016/0378-5963(85)90046-7","DOIUrl":"10.1016/0378-5963(85)90046-7","url":null,"abstract":"<div><p>The general applicability of power law forms of the background in electron spectra is pointed out and exploited for background removal from under Auger peaks. This form of <em>B(E)</em> is found to be extremely sensitive to instrumental alignment and to fault-free construction - an observation which can be used to set up analyser configurations in an accurate way. Also, differences between <em>N(E)</em> and <em>B(E)</em> can be used to derive a spectrometer transmission function <em>T(E)</em>. The questions of information density in an energy-analysing spatially-resolving instrument are addressed after reliable instrumental characterization has been established. Strategies involving ratio histograms, showing the population distribution of the ratio of a pair of Auger peak heights, composition scatter diagrams and windowed imaging are discussed and illustrated.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 145-159"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90046-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86184787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering 电子和工程用掺杂镉和极化碲化汞薄膜的半导体性和热电性的进一步研究
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90209-0
A. Tawfik, M.M.Abou Sekkina, M.I.Abd El-Ati
{"title":"Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering","authors":"A. Tawfik,&nbsp;M.M.Abou Sekkina,&nbsp;M.I.Abd El-Ati","doi":"10.1016/0378-5963(85)90209-0","DOIUrl":"10.1016/0378-5963(85)90209-0","url":null,"abstract":"<div><p>The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg<sub>0.7</sub>Cd<sub>0.30</sub>Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 763-771"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90209-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77331567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The role of hydrogen and boron in a-SiH : B—Electronic and optical properties 氢和硼在a-SiH: b中电子和光学性质的作用
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90224-7
N. Savvides
{"title":"The role of hydrogen and boron in a-SiH : B—Electronic and optical properties","authors":"N. Savvides","doi":"10.1016/0378-5963(85)90224-7","DOIUrl":"10.1016/0378-5963(85)90224-7","url":null,"abstract":"<div><p>Measurements of electrical conductivity and optical constants of thin films of a-SiH : B produced with varying hydrogen concentration (<em>C</em><sub>H</sub> = 0–30 at%) and boron concentration (<em>C</em><sub>B</sub> = 0.1–10 at%) are used to investigate the effects of increasing hydrogenation and doping on the density of states (DOS) of the a-Si network. There exist strong and abnormal dependences of electronic properties on <em>C</em><sub>H</sub> and <em>C</em><sub>B</sub> which correlate with increasing topological disorder of the a-Si network. For undoped films, concentrations of hydrogen up to 15 at% lead to a general decrease in the density of defect and band-tail states, a redistribution of valence band states, and a widening of the optical gap. A hydrogen content &gt; 15 at% leads to increasing density of localized dangling-bond type states and deep-lying valence band states suggesting substantial topological disorder.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 916-924"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90224-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78323085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies Fe/MgO(001)模型催化剂:电子显微镜和光谱研究
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90195-3
R.A. Hubert, J.M. Gilles
{"title":"Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies","authors":"R.A. Hubert,&nbsp;J.M. Gilles","doi":"10.1016/0378-5963(85)90195-3","DOIUrl":"10.1016/0378-5963(85)90195-3","url":null,"abstract":"<div><p>An ultrathin iron film deposited on a MgO single crystal in UHV is heated up to 500°C. AES/LEED measurements combined with TEM observations performed on small single crystal platelets show that the film is transformed into small particles below 300°C. Around 380°C, surface diffusion induces a spectacular growth of some particles. Upon further heating, the evolution of the system depends on the shape of the particles. In most cases, the particles become square and orient themselves along the MgO(110) direction (epitaxial configuration); however, they are unstable: they progressively dissolve in the MgO matrix, leading to a substitutional (Mg<sub><em>x</em></sub>Fe<sub>1−<em>x</em></sub>)O solid solution. In other cases, the iron particles remain shapeless and stable, suggesting that dissolution only occurs when the particles grow epitaxially.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 631-637"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90195-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78411746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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