电子和工程用掺杂镉和极化碲化汞薄膜的半导体性和热电性的进一步研究

A. Tawfik, M.M.Abou Sekkina, M.I.Abd El-Ati
{"title":"电子和工程用掺杂镉和极化碲化汞薄膜的半导体性和热电性的进一步研究","authors":"A. Tawfik,&nbsp;M.M.Abou Sekkina,&nbsp;M.I.Abd El-Ati","doi":"10.1016/0378-5963(85)90209-0","DOIUrl":null,"url":null,"abstract":"<div><p>The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg<sub>0.7</sub>Cd<sub>0.30</sub>Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 763-771"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90209-0","citationCount":"1","resultStr":"{\"title\":\"Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering\",\"authors\":\"A. Tawfik,&nbsp;M.M.Abou Sekkina,&nbsp;M.I.Abd El-Ati\",\"doi\":\"10.1016/0378-5963(85)90209-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg<sub>0.7</sub>Cd<sub>0.30</sub>Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 763-771\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90209-0\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

研究了新制备的Hg0.7Cd0.30Te薄膜的晶体结构、电导率和热释电性能。人们发现,这些性质彼此保持良好。明确指出了汞迁移、非化学计量学和结晶度的作用。最后,对碲化汞薄膜在电子工业和工程中的应用进行了评价和推荐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering

The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg0.7Cd0.30Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信