Applications of Surface Science最新文献_第7页

Determination of the morphology and effective optical constants of non-ideal thin films 非理想薄膜的形貌和有效光学常数的测定

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90213-2

D.F. Neely, T.L. Tansley, C.P. Foley

{"title":"Determination of the morphology and effective optical constants of non-ideal thin films","authors":"D.F. Neely, T.L. Tansley, C.P. Foley","doi":"10.1016/0378-5963(85)90213-2","DOIUrl":"10.1016/0378-5963(85)90213-2","url":null,"abstract":"<div><p>Optical techniques are widely used as non-destructive methods for determining the thickness and effective optical constants of vacuum deposited thin films. Implicit inmany such analyses is the use of an ideal morphological model of a thin film. The morphology of vacuum deposited thin films, however, may be far from ideal. The influence of morphological features on normal incidence reflectance and transmittance spectra of thin films is discussed. In particular, the interpretation of the non-ideal surface of a thin film as either a region giving rise to scattering of incident light or, by applying effective medium theory, as a region of graded refractive index will be considered. The results of a comparative study of the normal incidence reflectance and transmittance spectra of a number of sputtered thin films using both surface scattering and surface region of graded refractive index models is presented. It is shown that the latter model is preferred for films with surface features with dimensions of up to a considerable fraction of wavelength. The implications of these normal incidence results for ellipsometric measurements are also discussed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 804-812"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90213-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86142387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Roughening transitions on the helium crystal-superfluid interface 氦晶体-超流体界面上的粗化转变

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90203-X

A.V. Babkin, K.O. Keshishev, D.B. Kopeliovich, A.Ya. Parshin

引用次数: 3

X-ray photoelectron spectroscopy of oxidized pyrrhotite surfaces 氧化磁黄铁矿表面的x射线光电子能谱

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90061-3

A.N. Buckley, R. Woods

引用次数: 82

Electron surface barrier structure from analysis of barrier scattering features in LEED 从LEED中势垒散射特征分析电子表面势垒结构

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90035-2

M.N. Read

引用次数: 0

The growth and structure of RF sputtered indium tin oxide thin films 射频溅射氧化铟锡薄膜的生长与结构

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90200-4

K. Sreenivas, Abhai Mansingh

引用次数: 4

A composite insulator structure for VLSI multilevel metallization 一种用于VLSI多层金属化的复合绝缘子结构

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90233-8

George S. Gati

引用次数: 1

Cluster size and spatial distributions in gold deposits on NaCl surfaces NaCl表面上金矿的团簇大小及空间分布

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90187-4

J.L. Robins, H.S. Mortlock, D.G. Howard

引用次数: 7

Effect of laser annealing on the structural, electrical and optical properties of CdTe thin films 激光退火对CdTe薄膜结构、电学和光学性能的影响

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90218-1

A.L. Dawar , C. Jagadish, K.V. Ferdinand, Anil Kumar , P.C. Mathur

引用次数: 16

Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques 用分子束外延和等离子体技术模拟半导体薄膜生长过程中掺杂剂掺入、偏析和离子/表面相互作用效应

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90184-9

J.E. Greene , S.A. Barnett , A. Rockett , G. Bajor

{"title":"Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques","authors":"J.E. Greene , S.A. Barnett , A. Rockett , G. Bajor","doi":"10.1016/0378-5963(85)90184-9","DOIUrl":"10.1016/0378-5963(85)90184-9","url":null,"abstract":"<div><p>A model describing the incorporation of dopants into single crystals films grown by molecular beam epitaxy (MBE) is presented. The model accounts for dopant surface segregation during deposition and allows dopant incorporation probabilities and depth profiles to be calculated as a function of film growth conditions (e.g. deposition rate, dopant beam flux, and growth temperature, <em>T</em><sub>s</sub>). Input data to the model include thermodynamic parameters such as the free energy of segregation and dopant-surface binding energies together with kinetic parameters such as incident fluxes and dopant diffusivities. The model is applied here to the case of thermal doping during MBE with impurities exhibiting strong surface segregation and near-unity incorporation probabilities, σ, as well as those exhibiting both strong segregation and temperature-dependent σ values. In addition, an extension of the model is used to account for accelerated-ion doping during MBE. Calculated values of σ(<em>T</em><sub>s</sub>) and calculated depth profiles were found to agree very well with available experimental results in these cases. Finally, dopant incorporation data for epitaxial semiconductors deposited in glow discharge environments in which the growing film is bombarded by relatively large fluxes of inert gas ions as well as by ionized dopant species are presented and discussed. The results in this case are similar to low flux ion doping in MBE but with the additional effects of preferential sputtering and collisional mixing.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 520-544"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90184-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76520042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 43

Surface barrier studies with LEED fine structure analysis 基于LEED精细结构分析的表面屏障研究

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90034-0

P.J. Jennings, R.O. Jones

引用次数: 0