Applications of Surface Science最新文献_第6页

Epitaxy at {111}fcc/{110}bcc metal interfaces {111}fcc/{110}bcc金属界面的外延

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90185-0

Jan H. Van Der Merwe, M.W.H. Braun

引用次数: 22

High-rate hollow-cathode amorphous silicon deposition 高速空心阴极非晶硅沉积

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90225-9

Chris M. Horwitz, David R. McKenzie

引用次数: 6

Thin film CdS/CdTe solar cells 薄膜CdS/CdTe太阳能电池

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90243-0

W.J. Danaher, L.E. Lyons, G.C. Morris

引用次数: 19

An investigation of the interaction of polycrystalline zirconium with O2, N2, CO and N2O 多晶锆与O2、N2、CO和N2O相互作用的研究

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90057-1

Gar B. Hoflund, Douglas A. Asbury, David F. Cox , Richard E. Gilbert

引用次数: 3

Effect of different methods of oxidation on SiSiO2 interface state properties 不同氧化方法对SiSiO2界面态性质的影响

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90231-4

J. Majhi, D.Krishna Rao

{"title":"Effect of different methods of oxidation on SiSiO2 interface state properties","authors":"J. Majhi, D.Krishna Rao","doi":"10.1016/0378-5963(85)90231-4","DOIUrl":"10.1016/0378-5963(85)90231-4","url":null,"abstract":"<div>Three different methods of oxidation - thermal, TCE, and anodic — were applied to n-type (111) silicon 10 ohm cm resistivity samples. MOS test samples were fabricated and their interface state properties were characterized by C-V and AC field effect techniques. From C-V measurements the interface state density at mid gap was found to be less in TCE (2 × 1010 cm−2 eV−1) and anodic (1 × 1010 cm−2 eV−1) samples than in dry (5 × 1010 cm−2 eV−1) oxidized samples. The mobile charges were also less in TCE (2 × 1010 cm−2) and anodic (5 × 1010 cm−2) samples. Using the AC field effect technique, the frequency (2–100 kHz) and temperature dependence of field effect mobility, μFE, were studied. By applying Garrett's theory of frequency dependence of μFE, the relaxation times of interface states were found to vary from 30 to 3 μs in dry, 8 to 4 μs in TCE, and 4.5 to 1.5 μs in anodic samples in the temperature range 230 to 370 K. Using Rupprecht's theory of temperature dependence of relaxation times, thedominant energy levels, Ec - ET, were found to be shallower in TCE (0.04 eV) and anodic (0.06 eV) than in dry (0.1 eV) oxidized samples. The capture cross-section of these samples was found to be small, in the range 10−20 to 10−21 cm2. In TCE and anodic samples the shallow interface state levels indicate stronger interactions between silicon and oxygen atoms at the interface. The observed low densities of interface states and mobile charges in these samples also show improved passivation of silicon.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 983-991"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90231-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72873843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Transition density of states for cleaved and excited-oxygen exposed surfaces of Ge(111) derived from the M2,3M4,5V Auger transition 由M2,3M4,5V俄歇跃迁得到的Ge(111)劈裂面和受激氧暴露面态的跃迁密度

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90049-2

R.H. Brockman, G.J. Russell

{"title":"Transition density of states for cleaved and excited-oxygen exposed surfaces of Ge(111) derived from the M2,3M4,5V Auger transition","authors":"R.H. Brockman, G.J. Russell","doi":"10.1016/0378-5963(85)90049-2","DOIUrl":"10.1016/0378-5963(85)90049-2","url":null,"abstract":"<div>The M2,3M4,5V Auger transition obtained from vacuum-cleaved Ge(111) surfaces has been debroadened to remove inelastic scattering, instrumental effects and core level lifetime broadening. The resultant spectrum was further separated into its component - M2M4,5V, M3M4,5V - transitions to obtain the transition density of states function (TDOS). For the 15.3 eV wide valence band, four definite peaks were found at -4.3, -8.0, -11.9 and -13.7 eV and the main TDOS peak at - 4.3 eV is at variance with the accepted bulk value of approximately - 2.7 eV (analogous to previous silicon results). Detailed AES measurements for excited-oxygen exposed cleaved germanium surfaces are also reported. For oxygen exposures in the range 0.1 to 103 L a continuous shift was observed in the negative excursion of the M2,3M4,5V [N'(E)] transition and the derived TDOS curves showed that a number of oxygen-induced peaks appeared at well-defined energies, -7.7, -8.4, -11.3, -13.5, -14.9, -17.8 and -19.7 eV, below the vacuum level. Three of these peaks, -11.3, -14.9 and -19.7 eV, are consistent with GeO2 formation. For the range of exposures studied, the valence-band spectroscopic data reported have been interpreted as showing the simultaneous existence of both atomic and molecular chemisorption states and their coexistence with GeO2 formation during the early oxidation stage.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 173-183"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90049-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76571271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Derivation of charge transfer parameters at semiconductor-liquid interfaces 半导体-液体界面电荷转移参数的推导

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90242-9

S. Hinckley , D. Haneman

引用次数: 3

Structure of iron oxide films prepared by evaporating various iron oxide powders 各种氧化铁粉末蒸发制备的氧化铁薄膜的结构

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90194-1

C. Kaito, Y. Nakata, Y. Saito, K. Fujita

{"title":"Structure of iron oxide films prepared by evaporating various iron oxide powders","authors":"C. Kaito, Y. Nakata, Y. Saito, K. Fujita","doi":"10.1016/0378-5963(85)90194-1","DOIUrl":"10.1016/0378-5963(85)90194-1","url":null,"abstract":"<div>Crystalline films composed of mixtures (1) Fe, Fe3O4 and FeO, (2) FeO and Fe3O4, and (3) Fe3O4 were obtained by evaporating FeO powder (1) in a vacuum of 10−5 Torr; (2) in an oxygen atmosphere of 10−4−10−3 Torr; and (3) in an oxygen atmosphere of 10−1 Torr, respectively. Films of γ-Fe2O3 were obtained by evaporating Fe3O4 powder in an oxygen atmosphere of 10−4 Torr, or by evaporating α-Fe2O3 powder in a vacuum of 10−5 Torr. The γ-Fe2O3 films gave only amorphous haloes in electron diffraction patterns. High resolution electron microscope images of the films showed crossed lattice fringes (whose spacings were assigned to the γ-Fe2O3 crystal) in areas 2 nm in extent. The formation of various iron oxide films is discussed in connection with experimental results from the oxidation of iron.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 621-630"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90194-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75243430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Long-range force and interfacial energy between dissimilar metals 异种金属间的远程力和界面能

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90239-9

N.H. March, B.V. Paranjape

{"title":"Long-range force and interfacial energy between dissimilar metals","authors":"N.H. March, B.V. Paranjape","doi":"10.1016/0378-5963(85)90239-9","DOIUrl":"10.1016/0378-5963(85)90239-9","url":null,"abstract":"<div>The Lifshitz theory is applied to calculate the long-range dispersion force between two semi-infinite half planes of dissimilar metals. It is shown that the asymptotic form of the force F, for large separation d between the half planes is F = C12/d3, where an explicit expression is given for C12 in terms of the two plasma frequencies ωp2 and ωp1 of the interacting metals. Attention is then given to the contributions to the interfacial energy of the composite system. In an ideal situation, in which the two metals had (a) the same crystal structure, (b) identical lattice parameters and (c) no charge transfer, the interfacial energy is the sum σ1 + σ2 of the surface energies of the two pure metals involved. It is argued that the charge transfer contribution (c) takes the form (ΔW)2/ρ2lc, where ΔW is the difference in work functions of the two pure metals and lc is a characteristic length. Contributions arising from departures for ideal lattice matching, embodied in point (b) above can be estimated from the isothermal compressibility, κT, of the pure metals. Further, invoking for a pure metal the known approximate relation that <math><mtext>σκ</mtext><msub><mi></mi><mn><mtext>T</mtext></mn></msub><mtext> ∼ 1 </mtext><mtext>A</mtext><mtext>̊</mtext></math>. this lattice mismatch contribution is expressed again in terms of surface energies. It will usually alter the contribution σ1 + σ2 of ine interfacial energy by a multiplying factor less than, but quite near to unity.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1042-1048"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90239-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77532694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Low energy ion scattering of clean and oxygen-covered Ni(110) 清洁和氧覆盖Ni(110)的低能离子散射

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90041-8

P. Higginbottom, J. Homer, D.J. O'Connor, R.J. MacDonald

引用次数: 0