Derivation of charge transfer parameters at semiconductor-liquid interfaces

S. Hinckley , D. Haneman
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引用次数: 3

Abstract

The excess-carrier charge transfer velocity, υcp, is an important parameter describing the efficiency of charge transfer across a solid-liquid interface. By using recent theory to analyze current-voltage curves of photoelectrochemical cells, we have been able to derive values of υcp for CdSe films in aqueous polysulfide electrolytes and measure the effects of varying the sulfur concentration. The parameter, υcp, is found to vary at short circuit conditions, from 1.2 × 106 to 1.36 × 106 cm s−1 on increasing the sulfur concentration from 0 to 3.0M. In addition it has been found that υvp has only a weak voltage dependence described by an equation linear in voltage.

半导体-液体界面电荷转移参数的推导
过量载流子电荷转移速度(cp)是描述电荷在固液界面转移效率的重要参数。利用最新的理论分析了光电化学电池的电流-电压曲线,得到了CdSe薄膜在多硫化物水溶液中的 cp值,并测量了硫浓度变化的影响。在短路条件下,当硫浓度从0增加到3.0M时,参数 cp变化从1.2 × 106到1.36 × 106 cm s−1。此外,还发现,在电压线性方程中, vp只有微弱的电压依赖性。
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