Applications of Surface Science最新文献_第5页

Detection of multiple species through isosbestic points in UV-photoemission spectra: Application to sulfide adsorption on copper 利用紫外光发射光谱等吸点检测多种物质:在铜上硫化物吸附中的应用

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-09-26 DOI: 10.1016/0378-5963(85)90065-0

S.E. Anderson , G.L. Nyberg

引用次数: 1

Properties of ultrathin metallic films on Si(111) determined by high-resolution electron energy loss spectroscopy 用高分辨率电子能量损失谱法测定Si(111)上超薄金属薄膜的性质

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-09-26 DOI: 10.1016/0378-5963(85)90073-X

J.E Demuth, B.N.J Persson

引用次数: 0

Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films n型Pb0.8Sn0.2Te薄膜MIS结构的场效应研究

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90211-9

A.L. Dawar , K.V. Ferdinand, C. Jagadish, anil Kumar , Partap Kumar, P.C. Mathur

引用次数: 0

Structure of silicon oxide films prepared by vacuum deposition 真空沉积制备氧化硅薄膜的结构

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90193-X

Yoshio Saito, Chihiro Kaito, Kenzo Nishio, Toshio Naiki

引用次数: 7

Structure of iron oxide films prepared by evaporating various iron oxide powders 各种氧化铁粉末蒸发制备的氧化铁薄膜的结构

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90194-1

C. Kaito, Y. Nakata, Y. Saito, K. Fujita

{"title":"Structure of iron oxide films prepared by evaporating various iron oxide powders","authors":"C. Kaito, Y. Nakata, Y. Saito, K. Fujita","doi":"10.1016/0378-5963(85)90194-1","DOIUrl":"10.1016/0378-5963(85)90194-1","url":null,"abstract":"<div>Crystalline films composed of mixtures (1) Fe, Fe3O4 and FeO, (2) FeO and Fe3O4, and (3) Fe3O4 were obtained by evaporating FeO powder (1) in a vacuum of 10−5 Torr; (2) in an oxygen atmosphere of 10−4−10−3 Torr; and (3) in an oxygen atmosphere of 10−1 Torr, respectively. Films of γ-Fe2O3 were obtained by evaporating Fe3O4 powder in an oxygen atmosphere of 10−4 Torr, or by evaporating α-Fe2O3 powder in a vacuum of 10−5 Torr. The γ-Fe2O3 films gave only amorphous haloes in electron diffraction patterns. High resolution electron microscope images of the films showed crossed lattice fringes (whose spacings were assigned to the γ-Fe2O3 crystal) in areas 2 nm in extent. The formation of various iron oxide films is discussed in connection with experimental results from the oxidation of iron.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 621-630"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90194-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75243430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Effect of different methods of oxidation on SiSiO2 interface state properties 不同氧化方法对SiSiO2界面态性质的影响

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90231-4

J. Majhi, D.Krishna Rao

{"title":"Effect of different methods of oxidation on SiSiO2 interface state properties","authors":"J. Majhi, D.Krishna Rao","doi":"10.1016/0378-5963(85)90231-4","DOIUrl":"10.1016/0378-5963(85)90231-4","url":null,"abstract":"<div>Three different methods of oxidation - thermal, TCE, and anodic — were applied to n-type (111) silicon 10 ohm cm resistivity samples. MOS test samples were fabricated and their interface state properties were characterized by C-V and AC field effect techniques. From C-V measurements the interface state density at mid gap was found to be less in TCE (2 × 1010 cm−2 eV−1) and anodic (1 × 1010 cm−2 eV−1) samples than in dry (5 × 1010 cm−2 eV−1) oxidized samples. The mobile charges were also less in TCE (2 × 1010 cm−2) and anodic (5 × 1010 cm−2) samples. Using the AC field effect technique, the frequency (2–100 kHz) and temperature dependence of field effect mobility, μFE, were studied. By applying Garrett's theory of frequency dependence of μFE, the relaxation times of interface states were found to vary from 30 to 3 μs in dry, 8 to 4 μs in TCE, and 4.5 to 1.5 μs in anodic samples in the temperature range 230 to 370 K. Using Rupprecht's theory of temperature dependence of relaxation times, thedominant energy levels, Ec - ET, were found to be shallower in TCE (0.04 eV) and anodic (0.06 eV) than in dry (0.1 eV) oxidized samples. The capture cross-section of these samples was found to be small, in the range 10−20 to 10−21 cm2. In TCE and anodic samples the shallow interface state levels indicate stronger interactions between silicon and oxygen atoms at the interface. The observed low densities of interface states and mobile charges in these samples also show improved passivation of silicon.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 983-991"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90231-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72873843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial growth of C40 structure silicides on (111)Si C40结构硅化物在(111)Si上的外延生长

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90183-7

H.C. Cheng, W.T. Lin, C.J. Chien, F.Y. Shiau, L.J. Chen

{"title":"Epitaxial growth of C40 structure silicides on (111)Si","authors":"H.C. Cheng, W.T. Lin, C.J. Chien, F.Y. Shiau, L.J. Chen","doi":"10.1016/0378-5963(85)90183-7","DOIUrl":"10.1016/0378-5963(85)90183-7","url":null,"abstract":"<div>C40-type, hexagonal VSi2, MoSi2 and WSi2 have been grown epitaxially on (111)Si. V, Mo or W thin films, 250–300 rA in thickness, were electron gun deposited on (111)Si. Epitaxial growth of metal disilicides were induced by thermal annealing in vacuum. For VSi2 on (111)Si, epitaxial regions, 1–2 μm in size, were found to grow in samples 400–1000°C two-step annealed. MoSi2 grains, 0.2–2 μm in size, were observed to grow epitaxially on (111)Si following 1100°C annealing. WSi2 epitaxy, 0.4–1.2 μm in size, on (111)Si was obtained in samples annealed at 1050–1100°C. The orientation relationships between these metal silicides MSi2 and substrate Si were determined to be <math><mtext>(0001)</mtext><mtext>MSi</mtext><msub><mi></mi><mn>2</mn></msub><mtext>(111)</mtext><mtext>Si</mtext><mtext>, (22</mtext><mtext>4</mtext><mtext>0)</mtext><mtext>MSi</mtext><msub><mi></mi><mn>2</mn></msub><mtext>(22</mtext><mtext>4</mtext><mtext>)</mtext><mtext>Si</mtext></math> and <math><mtext>(20</mtext><mtext>2</mtext><mtext>0)</mtext><mtext>MSi</mtext><msub><mi></mi><mn>2</mn></msub><mtext>(20</mtext><mtext>2</mtext><mtext>)</mtext><mtext>Si</mtext></math>. Regular interfacial dislocation networks were observed at silicides/Si interfaces. The dislocations were identified to be of edge type with 61〈112〉 Burgers vectors. The average spacings of dislocations are 250, 100 and 40 Å for VSi2/Si, MoSi2/Si and WSi2/Si systems, respectively. The disparities in dislocation spacings are attributed to the differences in lattice mismatches and thermal expansion coefficients among these silicide/Si systems. The discovery of a number of new epitaxial silicides presents the exciting possibilities that novel devices with desirable characteristics may be realized.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 512-519"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90183-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77930002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

High-rate hollow-cathode amorphous silicon deposition 高速空心阴极非晶硅沉积

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90225-9

Chris M. Horwitz, David R. McKenzie

引用次数: 6

A new method to determine backscattering factors for quantitative Auger analysis 定量俄歇分析中确定后向散射因子的新方法

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-09-26 DOI: 10.1016/0378-5963(85)90047-9

Q. Wang, Q.J. Zhang, Z.Y. Hua

引用次数: 1

Determination of the morphology and effective optical constants of non-ideal thin films 非理想薄膜的形貌和有效光学常数的测定

Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90213-2

D.F. Neely, T.L. Tansley, C.P. Foley

{"title":"Determination of the morphology and effective optical constants of non-ideal thin films","authors":"D.F. Neely, T.L. Tansley, C.P. Foley","doi":"10.1016/0378-5963(85)90213-2","DOIUrl":"10.1016/0378-5963(85)90213-2","url":null,"abstract":"<div>Optical techniques are widely used as non-destructive methods for determining the thickness and effective optical constants of vacuum deposited thin films. Implicit inmany such analyses is the use of an ideal morphological model of a thin film. The morphology of vacuum deposited thin films, however, may be far from ideal. The influence of morphological features on normal incidence reflectance and transmittance spectra of thin films is discussed. In particular, the interpretation of the non-ideal surface of a thin film as either a region giving rise to scattering of incident light or, by applying effective medium theory, as a region of graded refractive index will be considered. The results of a comparative study of the normal incidence reflectance and transmittance spectra of a number of sputtered thin films using both surface scattering and surface region of graded refractive index models is presented. It is shown that the latter model is preferred for films with surface features with dimensions of up to a considerable fraction of wavelength. The implications of these normal incidence results for ellipsometric measurements are also discussed.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 804-812"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90213-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86142387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0