Applications of Surface Science最新文献_第4页

The Chadi total energy algorithm for determining surface geometries 确定表面几何形状的Chadi总能量算法

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90191-6

P.V. Smith

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引用次数: 3

Hall mobility and field effect mobility studies on PbTe HWE thin films PbTe HWE薄膜的霍尔迁移率和场效应迁移率研究

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90206-5

P.R. Vaya , J. Majhi , B.S.V. Gopalam , C. Dattatreyan

{"title":"Hall mobility and field effect mobility studies on PbTe HWE thin films","authors":"P.R. Vaya , J. Majhi , B.S.V. Gopalam , C. Dattatreyan","doi":"10.1016/0378-5963(85)90206-5","DOIUrl":"10.1016/0378-5963(85)90206-5","url":null,"abstract":"<div>Hall mobility (μH) and field effect mobility (μFE) studies were carried out on PbTe films of different thickness grown on KCl (100) substrates by the hot wall epitaxy (HWE) technique. The Hall mobility was obtained using the standard Van der Pauw technique. The diffused scattering mobility, μD, due to size effect was calculated and compared with μH. A large discrepancy between μH and μD was explained on the basis of a residual mobility contribution which was attributed to the scattering due to grain boundaries, dislocations, cleavage steps and other surface effects. For AC field effect studies an MIS structure with a thin mica spacer between the film surface and metal electrode was used. The field effect mobility, μFE, was obtained at different temperatures from 98 to 156 K in the frequency range of 40 to 200 kHz. The variation of μFE with frequency was found to be largely due to the relaxation of fast surface states having time constants from 1.84 to 0.96 μs in the above temperature range. The activation energy and capture cross-section of these surface states were calculated to be 0.02 eV and 10−19 cm2 respectively. Unlike the Hall mobility, the effective DC field effect mobility derived from the experimental results was found to be independent of film thickness.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 731-736"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90206-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80163324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Topics in ultraviolet inverse photoemission 紫外光逆发射的主题

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90066-2

V. Dose

引用次数: 2

Detection of multiple species through isosbestic points in UV-photoemission spectra: Application to sulfide adsorption on copper 利用紫外光发射光谱等吸点检测多种物质:在铜上硫化物吸附中的应用

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90065-0

S.E. Anderson , G.L. Nyberg

引用次数: 1

Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films n型Pb0.8Sn0.2Te薄膜MIS结构的场效应研究

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90211-9

A.L. Dawar , K.V. Ferdinand, C. Jagadish, anil Kumar , Partap Kumar, P.C. Mathur

引用次数: 0

Recent progress of amorphous silicon technology and its application to optoelectronic devices 非晶硅技术及其在光电器件中的应用进展

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90219-3

Yoshihiro Hamakawa

引用次数: 6

Properties of ultrathin metallic films on Si(111) determined by high-resolution electron energy loss spectroscopy 用高分辨率电子能量损失谱法测定Si(111)上超薄金属薄膜的性质

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90073-X

J.E Demuth, B.N.J Persson

引用次数: 0

Structure of silicon oxide films prepared by vacuum deposition 真空沉积制备氧化硅薄膜的结构

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90193-X

Yoshio Saito, Chihiro Kaito, Kenzo Nishio, Toshio Naiki

引用次数: 7

The electrical and optical properties of LiAlxB1−x thin films LiAlxB1−x薄膜的电学和光学性质

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90215-6

Hiroshi Kezuka, Makio Akimoto, Yotaro Taguchi, Kokuya Iwamura, Tomomo Masaki

{"title":"The electrical and optical properties of LiAlxB1−x thin films","authors":"Hiroshi Kezuka, Makio Akimoto, Yotaro Taguchi, Kokuya Iwamura, Tomomo Masaki","doi":"10.1016/0378-5963(85)90215-6","DOIUrl":"10.1016/0378-5963(85)90215-6","url":null,"abstract":"<div>The electrical and optical properties of LiAlxB1−x thin films deposited at 350°C by the Sandwich-Type Evaporation Method are measured. These films are metallic with a resistivity of (1–4) × 105 ohm cm at room temperature. In addition, we have developed a unique method. named the Brewster Angle Method (BAM), for obtaining the optical constants of thin films for LiAlxB1−x. In this method reflection coefficients are measured on the surface of thin films at any angle of incidence using a HeNe laser beam. The optical constants are calculated from the Brewster angle, φB, at the minimum value of reflection coefficient <math><mtext>|</mtext><mtext>R</mtext><msub><mi></mi><mn><mtext>B</mtext></mn></msub><mtext>|</mtext><msub><mi></mi><mn><mtext>min</mtext></mn></msub></math>. For a typical LiAlxB1−x film the optical constants are <math><mtext>n</mtext><mtext> = 1.42 − </mtext><mtext>j</mtext><mtext>0.31</mtext></math> and the complex dielectric constants are <math><mtext>ϵ</mtext><mtext> = 1.94 − </mtext><mtext>j</mtext><mtext>0.87</mtext></math>.</div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 820-826"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90215-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79905161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

MEED study of some crystalline surfaces 某些晶体表面的MEED研究

Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90036-4

G. Shimaoka

引用次数: 0