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Hall mobility and field effect mobility studies on PbTe HWE thin films PbTe HWE薄膜的霍尔迁移率和场效应迁移率研究
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90206-5
P.R. Vaya , J. Majhi , B.S.V. Gopalam , C. Dattatreyan
{"title":"Hall mobility and field effect mobility studies on PbTe HWE thin films","authors":"P.R. Vaya ,&nbsp;J. Majhi ,&nbsp;B.S.V. Gopalam ,&nbsp;C. Dattatreyan","doi":"10.1016/0378-5963(85)90206-5","DOIUrl":"10.1016/0378-5963(85)90206-5","url":null,"abstract":"<div><p>Hall mobility (<em>μ</em><sub>H</sub>) and field effect mobility (<em>μ</em><sub>FE</sub>) studies were carried out on PbTe films of different thickness grown on KCl (100) substrates by the hot wall epitaxy (HWE) technique. The Hall mobility was obtained using the standard Van der Pauw technique. The diffused scattering mobility, <em>μ</em><sub>D</sub>, due to size effect was calculated and compared with <em>μ</em><sub>H</sub>. A large discrepancy between <em>μ</em><sub>H</sub> and <em>μ</em><sub>D</sub> was explained on the basis of a residual mobility contribution which was attributed to the scattering due to grain boundaries, dislocations, cleavage steps and other surface effects. For AC field effect studies an MIS structure with a thin mica spacer between the film surface and metal electrode was used. The field effect mobility, <em>μ</em><sub>FE</sub>, was obtained at different temperatures from 98 to 156 K in the frequency range of 40 to 200 kHz. The variation of <em>μ</em><sub>FE</sub> with frequency was found to be largely due to the relaxation of fast surface states having time constants from 1.84 to 0.96 μs in the above temperature range. The activation energy and capture cross-section of these surface states were calculated to be 0.02 eV and 10<sup>−19</sup> cm<sup>2</sup> respectively. Unlike the Hall mobility, the effective DC field effect mobility derived from the experimental results was found to be independent of film thickness.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 731-736"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90206-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80163324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coadsorption of oxygen and caesium on silver (110) 氧和铯在银上的共吸附(110)
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-09-26 DOI: 10.1016/0378-5963(85)90078-9
K.C. Prince, M.E. Kordesch
{"title":"Coadsorption of oxygen and caesium on silver (110)","authors":"K.C. Prince,&nbsp;M.E. Kordesch","doi":"10.1016/0378-5963(85)90078-9","DOIUrl":"10.1016/0378-5963(85)90078-9","url":null,"abstract":"<div><p>The coadsorption of oxygen and caesium on silver has been studied by means of UPS and TPD. Adsorption of oxygen on a caesiated surface occurs in two stages, with a sticking coefficient, <em>s</em>, of nearly one in the first stage. In the second stage, the sticking coefficient is lower, but still higher than on the clean surface. After adsorption, the oxygen is present in two states, which are identified in TPD. These are ascribed to oxygen atoms adsorbed directly adjacent to Cs atoms, and those more distant from the Cs. Shifts in the Cs 5p lines are consistent with this assignment. The relevance to industrial catalysis of partial oxidation reactions over silver (e.g. epoxidation of ethylene) is discussed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 469-477"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90078-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80977859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Interfacial deep levels responsible for schottky barrier formation at semiconductor/metal contacts 负责半导体/金属接触处肖特基势垒形成的界面深度
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90227-2
John D. Dow, Otto F. Sankey, Roland E. Allen
{"title":"Interfacial deep levels responsible for schottky barrier formation at semiconductor/metal contacts","authors":"John D. Dow,&nbsp;Otto F. Sankey,&nbsp;Roland E. Allen","doi":"10.1016/0378-5963(85)90227-2","DOIUrl":"10.1016/0378-5963(85)90227-2","url":null,"abstract":"<div><p>The following facts, and many others, concerning III–V (e.g., GaAs, InP) Schottly barriers can be understood in terms of Fermi-level pinning by interfacial antisite defects (sheltered by vacancies) at semiconductor/metal contacts: (i) the barrier heights are almost independent of the metal in the contact; (ii) the surface Fermi levels can be pinned at sub-monolayer coverages and the pinning energies are almost unaffected by changes of stoichiometry or crystal structure; (iii) the schottky barrier heigh for n-InP with Cu, Ag, or Au is ⋍0.5 eV, but changes to ⋍0.1 eV when reactive metal contacts (Fe, Ni, or Al) are employed because the antisite defects are dominated by P vacancies; and (iv) the dependence on alloy composition or alloys of AlAs, GaAs, GaP, InAs, and GaAs is extremely complex — owing to the dependence of the binding energy for the cation-on-anion-site deep level on alloy composition. Fermi-level pinning by Si dangling bonds at Si/transition-metal silicide interfaces accounts for the following facts: (i) the barrier heights are independent of the transition-metal, to within ⋍0.3 eV; (ii) on the 0.1 eV scale there are chemical trends in barrier heights for n-Si, with the heights decreasing in the order Pt, Pd, and Ni; (iii) barriers form at low metallic coverage, (iv) barrier heights are independent of silicide crystal structure or stoichiometry to ± 0.1 eV; and (v) the barrier heights for n-Si and p-Si add up to approximately the energy of the band gap.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 937-947"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90227-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77109359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Low-loss waveguiding in ion-assisted-deposited thin films 离子辅助沉积薄膜中的低损耗波导
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90198-9
L.N. Binh, R.P. Netterfield, P.J. Martin
{"title":"Low-loss waveguiding in ion-assisted-deposited thin films","authors":"L.N. Binh,&nbsp;R.P. Netterfield,&nbsp;P.J. Martin","doi":"10.1016/0378-5963(85)90198-9","DOIUrl":"10.1016/0378-5963(85)90198-9","url":null,"abstract":"<div><p>Reduction in the scattering losses of ZrO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, CeO<sub>2</sub> and Ta<sub>2</sub>O<sub>5</sub> waveguides fabricated on BK-7 glass substrates using ion-assisted evaporation techniques has been achieved. The lowest losses have been observed for an Al<sub>2</sub>O<sub>3</sub> ion-assisted film using 1200 eV O<sub>2</sub><sup>1</sup>. These losses are of the order of 2–5 dB cm<sup>−1</sup> and compare with &gt; 15–20 dB cm<sup>1</sup> for evaporated guides produced without ion assistance.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 656-662"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90198-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77937665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Profiling of hydrogen in a-Si:H by the H(19F,αγ)16O∗ reaction 用H(19F，αγ)16O *反应分析a-Si:H中的氢
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90223-5
S.H. Sie, D.R. McKenzie, G.B. Smith
{"title":"Profiling of hydrogen in a-Si:H by the H(19F,αγ)16O∗ reaction","authors":"S.H. Sie,&nbsp;D.R. McKenzie,&nbsp;G.B. Smith","doi":"10.1016/0378-5963(85)90223-5","DOIUrl":"10.1016/0378-5963(85)90223-5","url":null,"abstract":"<div><p>The resonant reaction <span><math><mtext>H</mtext><mtext>(</mtext><msup><mi></mi><mn>19</mn></msup><mtext>F</mtext><mtext>,αγ)</mtext><msup><mi></mi><mn>16</mn></msup><mtext>O</mtext><msup><mi></mi><mn>∗</mn></msup></math></span> was used to study the hydrogen content and distribution with depth in a-Si : H films. The films were prepared in a DC magnetron by glow discharge decomposition of silane at a pressure of 1 Pa. The results showed that a surface hydrogen peak was present for a film prepared at 310°C but disappeared when the films were prepared at 370°C. The total hydrogen content was one half of that calculated using infrared absorption spectroscopy. RBS was used to determine the film density and scanning electron microscopy was used to investigate microstructure.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 908-915"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90223-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74419377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The electrical and optical properties of LiAlxB1−x thin films LiAlxB1−x薄膜的电学和光学性质
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90215-6
Hiroshi Kezuka, Makio Akimoto, Yotaro Taguchi, Kokuya Iwamura, Tomomo Masaki
{"title":"The electrical and optical properties of LiAlxB1−x thin films","authors":"Hiroshi Kezuka,&nbsp;Makio Akimoto,&nbsp;Yotaro Taguchi,&nbsp;Kokuya Iwamura,&nbsp;Tomomo Masaki","doi":"10.1016/0378-5963(85)90215-6","DOIUrl":"10.1016/0378-5963(85)90215-6","url":null,"abstract":"<div><p>The electrical and optical properties of LiAl<sub><em>x</em></sub>B<sub>1−<em>x</em></sub> thin films deposited at 350°C by the Sandwich-Type Evaporation Method are measured. These films are metallic with a resistivity of (1–4) × 10<sup>5</sup> ohm cm at room temperature. In addition, we have developed a unique method. named the Brewster Angle Method (BAM), for obtaining the optical constants of thin films for LiAl<sub><em>x</em></sub>B<sub>1−<em>x</em></sub>. In this method reflection coefficients are measured on the surface of thin films at any angle of incidence using a HeNe laser beam. The optical constants are calculated from the Brewster angle, <em>φ</em><sub>B</sub>, at the minimum value of reflection coefficient <span><math><mtext>|</mtext><mtext>R</mtext><msub><mi></mi><mn><mtext>B</mtext></mn></msub><mtext>|</mtext><msub><mi></mi><mn><mtext>min</mtext></mn></msub></math></span>. For a typical LiAl<sub><em>x</em></sub>B<sub>1−<em>x</em></sub> film the optical constants are <span><math><mtext>n</mtext><mtext> = 1.42 − </mtext><mtext>j</mtext><mtext>0.31</mtext></math></span> and the complex dielectric constants are <span><math><mtext>ϵ</mtext><mtext> = 1.94 − </mtext><mtext>j</mtext><mtext>0.87</mtext></math></span>.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 820-826"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90215-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79905161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MEED study of some crystalline surfaces 某些晶体表面的MEED研究
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-09-26 DOI: 10.1016/0378-5963(85)90036-4
G. Shimaoka
{"title":"MEED study of some crystalline surfaces","authors":"G. Shimaoka","doi":"10.1016/0378-5963(85)90036-4","DOIUrl":"10.1016/0378-5963(85)90036-4","url":null,"abstract":"<div><p>A new medium energy electron diffraction (MEED) system, which can observe both back scattering (BSMEED) and forward scattering (RMEED) patterns from the same surface of crystalline solids has been designed. Results obtained from MgO(001) and GaAs(001) indicate that MEED has the following favourable characteristics: (1) Unlike LEED, post-acceleration of the diffracted beam with a grid is not necessary for MEED. The diffraction pattern can be seen directly on a fluorescent screen. (2) Collimation and focusing of the incident beam are readily achieved and sharp diffraction spots are observed. (3) Unlike RHEED, a strictly flat surface is not necessary for MEED. Relatively rough, but clean surfaces can produce diffraction patterns. (4) From Kikuchi lines or bands it is possible to determine the precise orientation of the crystal surface. (5) By changing the energy of the incident beam it is possible to observe the surface layer both in two and three dimensions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 55-62"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90036-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80181273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High resolution electron microscopic studies of the oxidation process of ZnTe films ZnTe薄膜氧化过程的高分辨电镜研究
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90192-8
Chihiro Kaito, Nobuyuki Nakamura, Yoshio Saito
{"title":"High resolution electron microscopic studies of the oxidation process of ZnTe films","authors":"Chihiro Kaito,&nbsp;Nobuyuki Nakamura,&nbsp;Yoshio Saito","doi":"10.1016/0378-5963(85)90192-8","DOIUrl":"10.1016/0378-5963(85)90192-8","url":null,"abstract":"<div><p>ZnTe films of about 15 nm thickness were prepared by vacuum deposition from ZnTe power onto NaCl substrates heated to 300°C. Zinc oxide particles with a size of 5 nm which were formed on the surface of ZnTe crystals showed no epitaxial relationship with the latter. Tellurium crystals appeared on certain parts of the ZnTe crystals with specific epitaxial relationships such as <span><math><mtext>(0</mtext><mtext>1</mtext><mtext>1</mtext><mtext>1</mtext><mtext>)[10</mtext><mtext>1</mtext><mtext>0]</mtext><mtext>Te</mtext><mtext>(111)[110]</mtext><mtext>ZnTe and</mtext><mtext> (0</mtext><mtext>1</mtext><mtext>1</mtext><mtext>1</mtext><mtext>)[10</mtext><mtext>1</mtext><mtext>0]</mtext><mtext>Te</mtext><mtext>(0001)[10</mtext><mtext>1</mtext><mtext>0]</mtext><mtext>ZnTe</mtext></math></span>. Oxidation of the (110) surfaces of ZnTe crystals are slower than for any other plane. Images of the (110) films at an initial stage of oxidation contained faint superlattice fringes of about 0.85 nm spacing. On the basis of the matching between the HREM images and computer simulation images, the origin of the fringes was attributed to a periodic array of Zn vacancies introduced by the diffusion of Zn atoms to the surface of the ZnTe crystal.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 604-612"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90192-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80586048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Ordering in second stage alkali-metal-graphite intercalation compounds 第二阶段碱金属-石墨插层化合物的排序
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90202-8
G.R.S. Naylor
{"title":"Ordering in second stage alkali-metal-graphite intercalation compounds","authors":"G.R.S. Naylor","doi":"10.1016/0378-5963(85)90202-8","DOIUrl":"10.1016/0378-5963(85)90202-8","url":null,"abstract":"<div><p>The two-dimensional ordering in second stage alkali-metal-graphite intercalation compounds is investigated. It is shown that all hexagonal incommensurate metal lattices form commensurate superlattices. Using this, the observed orientational ordering is modelled by the simple condition that the experimental structure is a superlattice with a local minimum (varying the incommensurate lattice dimension) of the average distance of the metal atom from its nearest graphite hexagon centre. This approach is used in a detailed study of the diffraction pattern of the low temperature phase of second stage rubidium graphite.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 686-695"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90202-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80299494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress of amorphous silicon technology and its application to optoelectronic devices 非晶硅技术及其在光电器件中的应用进展
Applications of Surface Science Pub Date : 1985-05-01 Epub Date: 2003-02-10 DOI: 10.1016/0378-5963(85)90219-3
Yoshihiro Hamakawa
{"title":"Recent progress of amorphous silicon technology and its application to optoelectronic devices","authors":"Yoshihiro Hamakawa","doi":"10.1016/0378-5963(85)90219-3","DOIUrl":"10.1016/0378-5963(85)90219-3","url":null,"abstract":"<div><p>A review is given on recent progress in tetrahedrally-bonded amorphous semiconductors and their technological applications to optoelectronic devices. First, some significant advantages of these materials are pointed out, and tangible instances are demonstrated from current technological topics. The present state of the art in optoelectronic device development with this new kind of thin film is then reviewed, and the technical data are summarized and discussed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 859-878"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90219-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87456603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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