从LEED中势垒散射特征分析电子表面势垒结构

M.N. Read
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引用次数: 0

摘要

来自Cu(001)的高分辨率LEED强度数据显示了距离光束阈值在~ 3ev范围内的势垒散射特征,并使用两参数“修正图像势垒”(MIB)模型和三参数“饱和图像势垒”(SIB)模型进行了分析。研究发现,在MIB模型中,图像势尾原点z0的取值范围可以提供0.3 eV以内的实验最大值和最小能量位置拟合。在SIB模型中,存在多个z0值(以及相应的Us值,即相对于凝胶不连续处真空水平的电位值),可以将该数据拟合到0.3 eV。在先前作者确定的值之外的参数也得到了0.05 eV以内的拟合。可以得出结论,只有当这些实验数据拟合到0.05 eV以上时,才能找到每个模型的有效性和z0的确定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron surface barrier structure from analysis of barrier scattering features in LEED

High resolution LEED intensity data from Cu(001), showing barrier scattering features within ∼ 3 eV from a beam threshold, have been analyzed with a two parameter “modified image barrier” (MIB) model and a three parameter “saturated image barrier” (SIB) model. It is found that a range of values of z0, the origin of the image potential tail, in the MIB model can provide a fit of experimental maxima and minima energy locations to within 0.3 eV. With the SIB model, there is a multiplicity of values of z0 (and corresponding value of Us, the value of the potential with respect to the vacuum level at the jellium discontinuity), which can provide a fit to that data to 0.3 eV. Fits to within 0.05 eV were also obtained with parameters outside the values determined by previous authors. It is concluded that the validity of each model and the determination of z0 can only be found from such experimental data if it is fitted to at least 0.05 eV.

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