Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation

Applications of Surface Science Pub Date : 1985-05-01 DOI:10.1016/0378-5963(85)90238-7

J. Gazecki, G.A. Sai-Halasz , R.G. Elliman , A. Kellock, G.L. Nyberg, J.S. Williams

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引用次数: 18

Abstract

The adhesion enhancement of evaporated metal films on silicon and silicon dioxide substrates following electron and photon irradiation has been investigated. It is shown that an electric field applied across the metal-oxide-semiconductor interface during electron irradiation has a dramatic influence on adhesion enhancement. For photon irradiation, comparative adhesion measurements were undertaken as a function of increasing metal film thickness and different irradiation doses, for photon energies <4, <6 and 10.2 eV. Metal-oxide-semiconductor structures were also biased during photon irradiation to indicate the role of secondary processes such as charge flow to the interface from the oxide. Results indicate that adhesion enhancement can be significant even if the metal film thickness exceeds the photon penetration depth, supporting the view that low-energy secondary excitations are responsible for the stronger bonding configurations. It was also concluded that both electron and photon irradiation give rise not only to increased adhesion but also to increased cohesion within the metal film.

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利用电子和光子辐照改善薄膜对半导体和氧化物的附着力

研究了电子和光子辐照对蒸发金属薄膜在硅和二氧化硅衬底上的附着力增强的影响。结果表明，在电子辐照过程中，施加在金属-氧化物-半导体界面上的电场对金属-氧化物-半导体的粘附增强有显著的影响。对于光子辐照，在光子能量为4、6和10.2 eV时，作为增加金属膜厚度和不同辐照剂量的函数，进行了比较粘附测量。在光子辐照过程中，金属-氧化物-半导体结构也有偏倚，以表明二次过程的作用，如从氧化物流向界面的电荷流。结果表明，即使金属膜厚度超过光子穿透深度，附着力也会显著增强，这支持了低能二次激发导致更强的键构型的观点。电子和光子辐照不仅增加了金属膜的附着力，而且增加了金属膜内的内聚力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Applications of Surface Science

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