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Multiwalled carbon nanotubes-induced cytotoxic effects on human breast adenocarcinoma cell line 多壁碳纳米管对人乳腺腺癌细胞系的细胞毒性作用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400701
S. Bellucci, S. Dinicola, P. Coluccia, M. Bizzarri, A. Catizone, F. Micciulla, I. Sacco, G. Ricci, A. Cucina
{"title":"Multiwalled carbon nanotubes-induced cytotoxic effects on human breast adenocarcinoma cell line","authors":"S. Bellucci, S. Dinicola, P. Coluccia, M. Bizzarri, A. Catizone, F. Micciulla, I. Sacco, G. Ricci, A. Cucina","doi":"10.1109/SMICND.2012.6400701","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400701","url":null,"abstract":"Treatment of the human breast adenocarcinoma cell line, MCF-7, with 0.1 mg/ml of MWCNTs, MWCNTs-COOH, or MWCNTs-OH for 72 hours induced both a decrease in cell proliferation and a reduction of the percentage of cells in S-phase of cell cycle. Moreover, all types of MWCNTs induced an increase in apoptotic cells. Overall, these data indicated that the cytotoxic effects of all types of MWCNTs are mediated both from a decrease in the proliferation rate and from an increase of apoptotic cell death. The biological effects of all types of MWCNTs could be explained with their cellular internalization.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"61 1","pages":"37-42"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79150668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An active switch improved Dickson Charge Pump implemented in a BCD process 主动开关改进的Dickson电荷泵在BCD过程中实现
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400737
A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu
{"title":"An active switch improved Dickson Charge Pump implemented in a BCD process","authors":"A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu","doi":"10.1109/SMICND.2012.6400737","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400737","url":null,"abstract":"The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"138 1","pages":"437-440"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77453040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Structural and optical properties of ZnTe thin films ZnTe薄膜的结构和光学性质
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400772
T. Potlog, N. Maticiuc, A. Mirzac, P. Dumitriu, D. Scortescu
{"title":"Structural and optical properties of ZnTe thin films","authors":"T. Potlog, N. Maticiuc, A. Mirzac, P. Dumitriu, D. Scortescu","doi":"10.1109/SMICND.2012.6400772","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400772","url":null,"abstract":"Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"101 1","pages":"321-324"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80846307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Extinction spectra and near-field enhancement of metallic nanoparticles 金属纳米粒子的消光光谱和近场增强
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400736
T. Sandu, G. Boldeiu
{"title":"Extinction spectra and near-field enhancement of metallic nanoparticles","authors":"T. Sandu, G. Boldeiu","doi":"10.1109/SMICND.2012.6400736","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400736","url":null,"abstract":"Extinction spectra and near-field enhancement of metallic nanoparticles are calculated with a boundary integral equation (BIE) method. With the BIE method the far-field response and the near-field evanescent coupling are expressed as an eigenmode sum of resonant terms. In particular, the near-field enhancement around nanoparticles is obtained as a sum of resonant terms which acquire the spatial dependence of the eigenfunctions of the BIE operators. Moreover, the presented method permits a direct link between near-field and far field spectral properties. Finally, a numerical example is given.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"23 1","pages":"441-444"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89913652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polyperyleneimide — Based materials for optoelectronic devices 光电器件用聚酰亚胺基材料
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400675
M. Damaceanu, C. Constantin, R. Rusu, M. Brumǎ
{"title":"Polyperyleneimide — Based materials for optoelectronic devices","authors":"M. Damaceanu, C. Constantin, R. Rusu, M. Brumǎ","doi":"10.1109/SMICND.2012.6400675","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400675","url":null,"abstract":"Here we present a study of two copolyimides containing oxadiazole and perylene units in the main chain with emphasis on their photo-optical properties and electrochemical behavior. Upon irradiation with light of different wavelengths these polymers showed photoluminescence maxima in the UV, blue or green-yellow spectral range. Cyclic voltammetry was performed in order to obtain information about the electrochemical behaviour of these polymers that proved their n-type behaviour.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"135-138"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84540024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new robust over rail to rail comparator based on DCG-FGT transistor 一种基于DCG-FGT晶体管的鲁棒跨轨比较器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400728
A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
{"title":"A new robust over rail to rail comparator based on DCG-FGT transistor","authors":"A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour","doi":"10.1109/SMICND.2012.6400728","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400728","url":null,"abstract":"A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"276 1","pages":"467-470"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90152233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hydrogen sensor based on silicon carbide (SiC) MOS capacitor 基于碳化硅(SiC) MOS电容的氢传感器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400759
B. Ofrim, F. Udrea, G. Brezeanu, A. P. Hsieh
{"title":"Hydrogen sensor based on silicon carbide (SiC) MOS capacitor","authors":"B. Ofrim, F. Udrea, G. Brezeanu, A. P. Hsieh","doi":"10.1109/SMICND.2012.6400759","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400759","url":null,"abstract":"Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50-10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"193 1","pages":"367-370"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79707608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Semiconducting spinel ferrite powders prepared by self-combustion method for catalyst applications 用自燃法制备半导体尖晶石铁氧体粉末作催化剂
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400782
N. Rezlescu, E. Rezlescu, C. Doroftei, P. Popa, M. Ignat
{"title":"Semiconducting spinel ferrite powders prepared by self-combustion method for catalyst applications","authors":"N. Rezlescu, E. Rezlescu, C. Doroftei, P. Popa, M. Ignat","doi":"10.1109/SMICND.2012.6400782","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400782","url":null,"abstract":"Eight kinds of simple semiconducting spinel ferrites, MeFe2O4, were prepared by self-combustion method. To determine the material characteristics were performed X-ray diffraction, SEM observations, EDAX spectroscopy and BET analysis. The ferrites have tested catalytically in combustion reaction of three diluted gases: acetone, ethanol and methanol. The results revealed a pronounced decrease in the combustion temperature when Mg-, Cu- and Ni-ferrites are used as catalysts.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"24 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85155589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
p-NiO/ITO transparent heterojunction — Preparation and characterization p-NiO/ITO透明异质结的制备与表征
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400676
C. C. Forin, M. Purica, E. Budianu, P. Schiopu
{"title":"p-NiO/ITO transparent heterojunction — Preparation and characterization","authors":"C. C. Forin, M. Purica, E. Budianu, P. Schiopu","doi":"10.1109/SMICND.2012.6400676","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400676","url":null,"abstract":"The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"7 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88040029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits 宽带射频功率限制电路中欧姆接触和电容式RFMEMS开关的自动试验
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400650
R. Malmqvist, R. Jonsson, C. Samuelsson, S. Reyaz, P. Rantakari, A. Ouacha, T. Vaha-Heikkila, J. Varis, A. Rydberg
{"title":"Self-actuation tests of ohmic contact and capacitive RFMEMS switches for wideband RF power limiter circuits","authors":"R. Malmqvist, R. Jonsson, C. Samuelsson, S. Reyaz, P. Rantakari, A. Ouacha, T. Vaha-Heikkila, J. Varis, A. Rydberg","doi":"10.1109/SMICND.2012.6400650","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400650","url":null,"abstract":"This paper presents an experimental study on the high power handling capabilities of some ohmic contact based and capacitive RF-MEMS switches (incl. self-actuation tests made up to 18 GHz). Such tests carried out on a series and shunt connected ohmic contact COTS MEMS switch show that self-actuation occurred at 29-37 dBm of RF input power (Pin) given a DC bias (Vbias) of 42-47 V. Corresponding high power tests of a capacitive MEMS switch made on quartz (at 4 GHz) show that self-actuation occurred at Pin = 24-31 dBm with Vbias = 0-19 V. The experimental results further indicate a potential usefulness of employing ohmic contact and capacitive MEMS switches to realize optimised low-loss wideband power limiter circuits.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"138 1","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89595771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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