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CAS 2012 (International Semiconductor Conference)最新文献

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Carbon-based materials for ECL detection ECL检测用碳基材料
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400724
S. Benetto, A. Sanginario, D. Demarchi, S. Saddow
{"title":"Carbon-based materials for ECL detection","authors":"S. Benetto, A. Sanginario, D. Demarchi, S. Saddow","doi":"10.1109/SMICND.2012.6400724","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400724","url":null,"abstract":"The present work reports on the use of different carbon-based electrodes for ElectroChemiLuminescence (ECL) detection. Carbon NanoTubes (CNT), Glassy Carbon (GC) and Silicon Carbide (SiC) were studied and their ECL performance measured. CNT electrodes allow for the detection of lower Ruthenium concentrations compared with the GC ones, but they present a minor reproducibility. Preliminary analysis of SiC electrodes shows that it is a promising material to be used in ECL, especially for biological application due to its biocompatibility.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"11 1","pages":"483-486"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81688191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical studies of coupling in dielectric loaded plasmons 载介电等离子体耦合的数值研究
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400722
R. Tomescu, C. Kusko
{"title":"Numerical studies of coupling in dielectric loaded plasmons","authors":"R. Tomescu, C. Kusko","doi":"10.1109/SMICND.2012.6400722","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400722","url":null,"abstract":"In this paper we present a numerical analysis of two coupling mechanism between an input radiation field and a plasmonic waveguide. This analysis is realized by designing and simulating a surface plasmonic structure compound of a slab dielectric waveguide patterned on a thin film of noble metal. In order to determine what is the best coupling mechanism we realize a comparison between these two methods (air coupling and coupling through a tapered waveguide) with the direct method. For this numerical analysis we use the finite-difference timedomain (FDTF) method.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"30 1","pages":"491-496"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85478846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential 超结IGBTS:具有高冲击潜力的硅功率器件的一个进化步骤
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400702
F. Bauer, I. Nistor, A. Mihaila, M. Antoniou, F. Udrea
{"title":"SuperJunction IGBTS: An evolutionary step of silicon power devices with high impact potential","authors":"F. Bauer, I. Nistor, A. Mihaila, M. Antoniou, F. Udrea","doi":"10.1109/SMICND.2012.6400702","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400702","url":null,"abstract":"15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, major breakthrough in the field of silicon power devices. Today, the SuperJunction MOSFET technologies have reached a mature stage characterized by gradual performance improvements. SuperJunction Insulated Gate Bipolar Transistors (SJ IGBTs) could interrupt this stagnation holding promise to revitalize voltage classes from 600 up to 1200 V. Such SJ IGBTs surpass by a very significant margin their SJ MOSFET counterparts both in terms of power handling capability, on-state and turn-off losses, all at the same time. On the higher end of the voltage class, SJ IGBTs would top the performance of 1.2 kV IGBTs by a similar margin.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"27-36"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90012619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimization of a passive micromixer using models based on variable diffusion coefficient 基于变扩散系数模型的无源微混合器优化
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400745
O. Nedelcu, I. Stanciu
{"title":"Optimization of a passive micromixer using models based on variable diffusion coefficient","authors":"O. Nedelcu, I. Stanciu","doi":"10.1109/SMICND.2012.6400745","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400745","url":null,"abstract":"In this work a passive micromixer is designed, simulated and optimized in order to obtain fully mixed liquids at the outlet. The basic configuration is a microchannel with two inlets, three outlets, and obstacles that increase the transversal component of velocity and facilitate the mixing. The simulations are based on an improved model of diffusion coefficient that depends on local concentration and properties of each mixing liquid. The model is applied to two cases of miscible fluids: water with methanol and water with glucose solution. The simulations based on this model are used to optimize design specifications. The results are discussed in terms of velocity and concentration distribution and compared to results obtained by classic approach.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"39 1","pages":"411-414"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89140505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Microbiosensor for electrical impedance spectroscopic study of melanoma cells 用于黑素瘤细胞电阻抗光谱研究的微生物传感器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400666
A. Avram, C. Marculescu, C. Bălan, C. Voitincu, C. Pirvulescu, M. Volmer, Andrei C. Popescu, Mona Mihailescu, M. Avram
{"title":"Microbiosensor for electrical impedance spectroscopic study of melanoma cells","authors":"A. Avram, C. Marculescu, C. Bălan, C. Voitincu, C. Pirvulescu, M. Volmer, Andrei C. Popescu, Mona Mihailescu, M. Avram","doi":"10.1109/SMICND.2012.6400666","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400666","url":null,"abstract":"This paper presents the fabrication and characterization of an interdigitated microelectrode array (IDMEA) biosensor. Electrochemical impedance spectroscopy and cyclic voltammetry were used to study the cellular activities of B16 melanoma cell line C57BL, including the kinetics of cell adhesion and spreading on IDMEA. Impedance spectra of B16 melanoma cells on microelectrodes were obtained in cell 0.1 M PBS with 50 mM [Fe(CN)(6)](3-/4-) as redox species. Randles equivalent circuits were used to model the electrochemical processes. Impedance spectra allowed us to analyze the changes in the double layer capacitance and charge transfer resistance due to cell attachment on the interdigitated microelectrodes.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"118 1","pages":"165-168"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81338562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A review of WBG power semiconductor devices WBG功率半导体器件综述
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400696
J. Millán
{"title":"A review of WBG power semiconductor devices","authors":"J. Millán","doi":"10.1109/SMICND.2012.6400696","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400696","url":null,"abstract":"It is worldwide accepted that a real breakthrough in the Power Electronics field mainly comes from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high switching speed, high voltage and high temperature. These unique performances provide a qualitative change in their applications for energy processing. From energy generation to the end-user, the electric energy undergoes a number of conversions, which are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. Future trends in device development and industrialization are also addressed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"113 1","pages":"57-66"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73653104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 66
Pyrene-1-butyric acid-doped polyaniline for fluorescence quenching-based oxygen sensing 吡咯-1-丁酸掺杂聚苯胺的荧光猝灭氧传感
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400789
B. Serban, S. Costea, O. Buiu, C. Cobianu, C. Diaconu
{"title":"Pyrene-1-butyric acid-doped polyaniline for fluorescence quenching-based oxygen sensing","authors":"B. Serban, S. Costea, O. Buiu, C. Cobianu, C. Diaconu","doi":"10.1109/SMICND.2012.6400789","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400789","url":null,"abstract":"The synthesis of pyrene-1-butyric acid (PBA)-doped polyaniline (PANI) and its oxygen sensing properties, through fluorescence quenching, are reported. The structures of both undoped PANI (emeraldine) and PBA-doped PANI are investigated by means of Fourier Transform InfraRed (FT-IR) spectroscopy. The O2 sensing capability of the synthesized layer is demonstrated through fluorescence spectroscopy performed at different air pressure values. PBA-doped PANI is expected to lead to a fluorophore with better stability and reliability than free PBA. This could bring real benefits to the overall functioning of industrial O2 sensors based on fluorescence quenching.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"265-268"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76327897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the possibility to realize the magneto-concentration effect in filiform micro- and nano-structures 探讨在丝状微纳米结构中实现磁浓缩效应的可能性
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400643
A. Ioisher, E. Aleinicov, É. Badinter, N. Leporda, I. Tiginyanu, V. Ursaki
{"title":"On the possibility to realize the magneto-concentration effect in filiform micro- and nano-structures","authors":"A. Ioisher, E. Aleinicov, É. Badinter, N. Leporda, I. Tiginyanu, V. Ursaki","doi":"10.1109/SMICND.2012.6400643","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400643","url":null,"abstract":"We investigate the possibility of revealing the magneto-concentration, particularly the galvano-magneto-recombination (GMR) effect in semiconductor filiform micro- and nano-strurcures (FMS u FNS). These structures represent isolated from each other micro- and nano-wires in glass envelope with the core from a semiconductor material. Different rates of charge carrier surface recombination rates are realized at diametrically opposed surfaces of cores. This difference assure conditions for the emergence of the GMR effect on segments of such FMS and FNS placed in a transversal magnetic field which leads to the change of the sample resistance proportionally to the intensity of the magnetic field.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"21 1","pages":"239-242"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84932081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bandwidth and gain enhanced pnp phototransistors for VIS and NIR light IN 180 nm CMOS 180nm CMOS中用于VIS和NIR光的带宽和增益增强的pnp光电晶体管
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400726
P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann
{"title":"Bandwidth and gain enhanced pnp phototransistors for VIS and NIR light IN 180 nm CMOS","authors":"P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann","doi":"10.1109/SMICND.2012.6400726","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400726","url":null,"abstract":"Two phototransistor concepts with a size of 40×40 μm2 are presented. These devices were implemented in a 180 nm standard CMOS process without process modifications. The use of a special starting material with a low doped p- epitaxial layer on top of the high doped p+ substrate opens the possibility for achieving high bandwidths and responsivities even for deep penetrating light. Optical characterization of the devices was done at 410 nm, 675 nm and 850 nm. Bandwidths up to 67 MHz and responsivities up to 12.35 A/W were achieved. These devices are well suited for integrated optoelectronic circuits (OEICs).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"26 1","pages":"475-478"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75341047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SAW GaN/Si based resonators: Modeling and experimental validation SAW GaN/Si基谐振器:建模和实验验证
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400656
A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru
{"title":"SAW GaN/Si based resonators: Modeling and experimental validation","authors":"A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru","doi":"10.1109/SMICND.2012.6400656","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400656","url":null,"abstract":"We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"85 1","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82407012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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