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CAS 2012 (International Semiconductor Conference)最新文献

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Ballistic electron propagation in a composite metamaterial 复合超材料中的弹道电子传播
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400723
A. Dumitriu, D. Dragoman
{"title":"Ballistic electron propagation in a composite metamaterial","authors":"A. Dumitriu, D. Dragoman","doi":"10.1109/SMICND.2012.6400723","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400723","url":null,"abstract":"The main purpose of this paper is to underline the property of periodic structures consisting of layers with imaginary wavenumbers for ballistic electrons to allow charge carrier propagation in certain energy bands. Such periodic structures are analogous to composite optical metamaterials. In addition, we compare the dependence on energy of two time parameters with relevance for electron pulses and beams: the phase time and the traversal time, respectively.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"70 1","pages":"478-490"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86254583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The lateral superjunction PSOI LIGBT and LDMOSFET PSOI灯与LDMOSFET的横向超结
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400763
M. Antoniou, E. Tee, S. Pilkington, D. K. Pal, F. Udrea, A. Hoelke
{"title":"The lateral superjunction PSOI LIGBT and LDMOSFET","authors":"M. Antoniou, E. Tee, S. Pilkington, D. K. Pal, F. Udrea, A. Hoelke","doi":"10.1109/SMICND.2012.6400763","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400763","url":null,"abstract":"This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"12 1","pages":"351-354"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81971923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Influence of technological conditions on the properties of CBD CdS layers 工艺条件对CBD CdS层性能的影响
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400659
N. Maticiuc, J. Hiie, T. Potlog
{"title":"Influence of technological conditions on the properties of CBD CdS layers","authors":"N. Maticiuc, J. Hiie, T. Potlog","doi":"10.1109/SMICND.2012.6400659","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400659","url":null,"abstract":"This work evaluates the efficacy of the chemical bath deposition (CBD) and technological conditions for preparation of homogeneous CdS thin films with high transparency and low resistivity. The effects of various technological parameters (magnetic agitation of solution, pre-treatment in vacuum, annealing in hydrogen atmosphere, and concentration of chlorine as dopant in the deposition bath) on morphology, transmittance and electrical properties were studied. Together, these results show that CBD is an efficient technique, helpful for the scaling-up of the manufacturing process of suitable and reproducible window n-type CdS layers for further solar cell application.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"29 1","pages":"187-190"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91201612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Iodine irradiation induced defects in crystalline silicon 碘辐照引起的晶体硅缺陷
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400787
A. Slav, A. Lepadatu, C. Palade, I. Stavarache, G. Iordache, M. Ciurea, S. Lazanu, M. R. Mitroi
{"title":"Iodine irradiation induced defects in crystalline silicon","authors":"A. Slav, A. Lepadatu, C. Palade, I. Stavarache, G. Iordache, M. Ciurea, S. Lazanu, M. R. Mitroi","doi":"10.1109/SMICND.2012.6400787","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400787","url":null,"abstract":"N-type P-doped silicon single crystals with resistivity higher than 8000 Ωcm were irradiated with 127I6+ ions of 28 MeV kinetic energy. The penetration of the ions through the target and the processes of energy loss were simulated using the CTRIM Monte Carlo code, and point defect production was calculated in the frame of our diffusion-reaction model. Trapping phenomena were investigated using the method of thermally stimulated currents without applied bias. The modeling of the current-temperature curves takes into consideration both point defects and stress-type trapping centers, produced by the ions stopped into the crystal.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"20 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90032164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrochemistry-based maskless nanofabrication 基于电化学的无掩膜纳米制造
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400703
I. Tiginyanu, E. Monaico, V. Popa
{"title":"Electrochemistry-based maskless nanofabrication","authors":"I. Tiginyanu, E. Monaico, V. Popa","doi":"10.1109/SMICND.2012.6400703","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400703","url":null,"abstract":"A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on III-V and II-VI compounds as well as two-dimensional metallo-dielectric structures realized in different geometries. It is shown that photoelectrochemical etching of GaN combined with preliminary low-dose low-energy focused-ion-beam treatment of the sample surface allows one to fabricate in a controlled fashion arrays of nanowires and nanowalls as well as ultrathin membranes and supporting nanocolumns in the same technological route. Possible electronic and photonic applications of the elaborated nanostructures are discussed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"21-26"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88094826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A continuous time sigma delta modulator with operational floating integrator 具有可操作浮动积分器的连续时间σ δ调制器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400729
D. Ducu, A. Manolescu
{"title":"A continuous time sigma delta modulator with operational floating integrator","authors":"D. Ducu, A. Manolescu","doi":"10.1109/SMICND.2012.6400729","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400729","url":null,"abstract":"This paper presents a new circuit realization for current mode continuous time sigma delta modulator. In this sigma delta convertor for implementation of integrators in loop filter, operational floating conveyors are employed. The modulator is designed in 0.18μm TSMC CMOS technology and features low power consumption (<;3mW), low supply voltage (±1.8), and wide dynamic range (>;70db). The performance of the circuits was demonstrated using HSPICE at low voltage operation of ±1.8V.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"73 1","pages":"463-466"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88156610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Preliminary studies on nanocomposite based on high quality Silicon Carbide nanofibers 基于优质碳化硅纳米纤维的纳米复合材料的初步研究
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400688
S. Bellucci, I. Sacco, F. Micciulla, A. Dąbrowska, A. Huczko, E. Caponetti, M. Floriano, A. Dinescu
{"title":"Preliminary studies on nanocomposite based on high quality Silicon Carbide nanofibers","authors":"S. Bellucci, I. Sacco, F. Micciulla, A. Dąbrowska, A. Huczko, E. Caponetti, M. Floriano, A. Dinescu","doi":"10.1109/SMICND.2012.6400688","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400688","url":null,"abstract":"Nanocomposites are nowadays the most promising new materials due to their unique properties (such as high mechanical strength, chemical and thermal resistance). The nanocomposite matrix is blended with a nanostructured filler. In this study, Silicon Carbide nanofibers (NFSiC) and their bundles were tested as a reinforcement of two epoxy resins: EPIKOTE 828 and EL 20. PAP-4 (33 phr) and P-900 (40 phr) were used as hardeners in the two cases, respectively. Several samples were prepared in the range between 0.1 and 5 % wt for both types of resins and fillers (NFSiC and NFSiC bundles). Mechanical and electrical properties were tested. The fillers were obtained using a new simple, fast, low-cost and efficient method to synthesize nanomaterials: Self-propagating High-Temperature Synthesis (SHS). The produced nanofillers were analyzed by Scanning Electron Microscope (SEM), Trasmission Electron Microscope (TEM). They were purified, as well. The nanocomposites obtained using such nanofillers were assayed by SEM and TEM techniques.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"43 1","pages":"95-98"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88580783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A simple method for power loss estimation in PWM inverter-fed motors 一种简单的PWM逆变电机功率损耗估计方法
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400735
S. Rosu, C. Radoi, M. Teodorescu, P. Guglielmi, I. Bojoi, M. Pastorelli
{"title":"A simple method for power loss estimation in PWM inverter-fed motors","authors":"S. Rosu, C. Radoi, M. Teodorescu, P. Guglielmi, I. Bojoi, M. Pastorelli","doi":"10.1109/SMICND.2012.6400735","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400735","url":null,"abstract":"This paper presents a simple power loss estimation method for inverter-fed low power AC asynchronous and synchronous motors. The method uses a simulation based DC/AC converter power loss estimation based on datasheet parameters and load characteristics like measured phase resistance and current phase delay. A current control scheme is used to impose a constant current at various speeds. Using this approach both asynchronous and synchronous motors can be used as a load. Total power loss is measured as the DC Link current by an amperemeter avoiding the use of complicated measurement systems.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"44 1","pages":"445-448"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88586475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hydrophobic ZnO used in EWOD technology and SAW devices for better bio-fluid slip AT microchannel walls controlled by DC pulses 疏水氧化锌用于EWOD技术和SAW器件，以获得更好的生物流体滑移AT微通道壁，由直流脉冲控制
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400645
L. Sirbu, L. Ghimpu, R. Muller, I. Voda, I. Tiginyanu, V. Ursaki, T. Dascălu
{"title":"Hydrophobic ZnO used in EWOD technology and SAW devices for better bio-fluid slip AT microchannel walls controlled by DC pulses","authors":"L. Sirbu, L. Ghimpu, R. Muller, I. Voda, I. Tiginyanu, V. Ursaki, T. Dascălu","doi":"10.1109/SMICND.2012.6400645","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400645","url":null,"abstract":"In this paper, we will review the electrowetting on dielectric (EWOD) principles applied to microfluidic devices. We replaced the usually used teflon surface by ZnO transparent film in order to obtain a device with an optical weak absorption in the diapason ranged from VIS to far-MIR and THz waves. We studied the piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in Ar+O2 plasma. ZnO films have been grown on SiO2/Si(100) substrate using a zinc oxide target. The morphological characteristics of the films were investigated by atomic force microscopy (AFM). We present the THz spectra from ZnO films.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"25 1","pages":"231-234"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88686248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low power and highly reliable gates using arrays of optimally sized transistors 采用最佳尺寸晶体管阵列的低功耗和高可靠性门
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400738
Valeriu Beiu, L. Iordaconiu, A. Beg, W. Ibrahim, F. Kharbash
{"title":"Low power and highly reliable gates using arrays of optimally sized transistors","authors":"Valeriu Beiu, L. Iordaconiu, A. Beg, W. Ibrahim, F. Kharbash","doi":"10.1109/SMICND.2012.6400738","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400738","url":null,"abstract":"This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"5 1","pages":"433-436"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81639439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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