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CAS 2012 (International Semiconductor Conference)最新文献

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Multigas sensor based on micro machined hotplates for CO and O2 detection using catalytically modified nano-SnO2 基于微机械热板的多气体传感器用于CO和O2的催化修饰纳米sno2检测
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400670
T. Andreu, C. Fàbregas, F. H. Ramírez, J. Morante
{"title":"Multigas sensor based on micro machined hotplates for CO and O2 detection using catalytically modified nano-SnO2","authors":"T. Andreu, C. Fàbregas, F. H. Ramírez, J. Morante","doi":"10.1109/SMICND.2012.6400670","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400670","url":null,"abstract":"SnO2 nanostructures have been loaded with different amount and types of catalysts. These ones work as active filters that functionally response in a very different way against carbon monoxide and oxygen. The micro machined hotplates contain different thermally and electrically independent membranes integrated in the same chip allowing that one of the active sensing materials is turned to present a higher sensitivity to CO than to O2, whereas the other sensor is mainly turned for detecting O2 variations without any cross talk of temperature. The resistance data obtained from this type of combined sensors as a function of CO and O2 concentrations has been parameterized and modulated for the direct deduction of the both gas concentrations. So, two functions are calculated for the quantification of CO/O2 gas mixtures. A comparison with a reference oxygen sensor based on a perovskite type barium stannate layer of BaSnO3 working as oxygen gas sensor at high temperature and not presenting interfering crosstalk with the CO concentration is also discussed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"15 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82815793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond n型金刚石中无绝缘体纳米晶体管的仿真
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400733
C. Ravariu
{"title":"Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond","authors":"C. Ravariu","doi":"10.1109/SMICND.2012.6400733","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400733","url":null,"abstract":"A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"120 1","pages":"453-456"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85887791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diode modeling for milimeter wave applications based on co-simulation technique 基于联合仿真技术的毫米波应用二极管建模
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400654
A. Takacs, A. Bunea, A. Zair, D. Neculoiu, H. Aubert
{"title":"Diode modeling for milimeter wave applications based on co-simulation technique","authors":"A. Takacs, A. Bunea, A. Zair, D. Neculoiu, H. Aubert","doi":"10.1109/SMICND.2012.6400654","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400654","url":null,"abstract":"This paper addresses the modeling and the co-simulation technique of millimeter wave Schottky diode for millimeter wave applications such as rectennas and detectors. In order to provide accurate simulation models a co-simulation technique based on the combination of full-wave electromagnetic simulations and non-linear circuit modeling is proposed. The obtained results demonstrates a good correlation between simulation and measurement and the proposed methodology can be used for designing high-performing circuits without expensive and time consuming prototyping.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"79 1","pages":"201-204"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88860130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nonideal behavior of a class of Cellular Neural Networks 一类细胞神经网络的非理想行为
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400751
P. M. Puscasu, L. Goras
{"title":"Nonideal behavior of a class of Cellular Neural Networks","authors":"P. M. Puscasu, L. Goras","doi":"10.1109/SMICND.2012.6400751","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400751","url":null,"abstract":"The aim of this paper is to report several new results regarding the nonideal behavior of a class of Cellular Neural Networks at system and transistor levels.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"201 1","pages":"393-396"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75987411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical and sensory properties of ZnO nanofibrous layers grown by magnetron sputtering 磁控溅射生长ZnO纳米纤维层的光学和感官特性
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400674
L. Ghimpu, I. Tiginyanu, V. Ursaki, O. Lupan, L. Chow, Y. Rudzevich, Yuqing Lin
{"title":"Optical and sensory properties of ZnO nanofibrous layers grown by magnetron sputtering","authors":"L. Ghimpu, I. Tiginyanu, V. Ursaki, O. Lupan, L. Chow, Y. Rudzevich, Yuqing Lin","doi":"10.1109/SMICND.2012.6400674","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400674","url":null,"abstract":"This paper presents optical and sensory properties of ZnO nanofirous layers grown by a cost-effective and fast fabrication method based on magnetron sputtering. The as-prepared nanofibrous layers show good conductive properties which are of interest for gas sensing structures. Their application for hydrogen detection is demonstrated in premiere, and the developed H2 sensor structure exhibits good response / recovery behavior under ultraviolet (UV) light, and good sensitivity. This method is cost-effective and facile and has a great potential for various sensorial applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"36 1","pages":"139-142"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88827453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
How to improve the silicon nanocrystal memory cell performances for low power applications 如何提高硅纳米晶存储电池在低功耗应用中的性能
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400686
V. D. Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, Philippe Boivin, E. Jalaguier, B. D. Salvo, J. Ogier
{"title":"How to improve the silicon nanocrystal memory cell performances for low power applications","authors":"V. D. Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, Philippe Boivin, E. Jalaguier, B. D. Salvo, J. Ogier","doi":"10.1109/SMICND.2012.6400686","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400686","url":null,"abstract":"In this paper we propose to optimize the 1T silicon nanocrystal (Si-nc) memory cell in order to reduce the energy consumption for low power applications. Optimized Channel Hot Electron Injection (a 4.5V programming window is reached consuming 1nJ) and Fowler-Nordheim programming are analyzed and compared. The tunnel oxide thickness, Si-ncs area coverage and SiN silicon nanocrystals capping layer are adjusted to optimize the data retention and endurance criteria. We present for the first time the endurance characteristics of a Si-nc cell up to 106 cycles with a final programming window of 4V.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"16 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77052425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wafer resistivity influence over DRIE processes for TSVs manufacturing 晶圆电阻率对tsv制造工艺的影响
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400662
D. Vasilache, M. Chistè, S. Colpo, F. Giacomozzi, B. Margesin
{"title":"Wafer resistivity influence over DRIE processes for TSVs manufacturing","authors":"D. Vasilache, M. Chistè, S. Colpo, F. Giacomozzi, B. Margesin","doi":"10.1109/SMICND.2012.6400662","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400662","url":null,"abstract":"This paper presents for the first time influence of the silicon resistivity over the DRIE processes. Our aim was to develop a new process for tapered walls through silicon vias (TSVs) with a good control over the walls angle. Different wafer types were used and a dependency of resistivity was found, with an important impact over the TSVs shape. Solution found is presented and experiments performed to obtained designed TSVs.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"150 1","pages":"175-178"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75178861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
System-level simulator of radio communication in the EHF band EHF波段无线电通信的系统级模拟器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400649
E. Golovins, S. Sinha
{"title":"System-level simulator of radio communication in the EHF band","authors":"E. Golovins, S. Sinha","doi":"10.1109/SMICND.2012.6400649","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400649","url":null,"abstract":"Design of the radio systems operating in the 60 GHz band raises a number of questions regarding the frequency-domain performance of transceiver subsystems. This work, combining the baseband and RF parts of the architecture, shows that a system-level simulation model allows identifying bottlenecks in the integrated functioning of various subsystems. Comparative error rate analysis highlights the propagation channel effect domination in performance limiting.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"131 1","pages":"221-224"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76419483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A SystemVerilog approach in system validation with affine arithmetic 用仿射算法进行系统验证的SystemVerilog方法
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400746
R. Mialtu
{"title":"A SystemVerilog approach in system validation with affine arithmetic","authors":"R. Mialtu","doi":"10.1109/SMICND.2012.6400746","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400746","url":null,"abstract":"This paper introduces an original approach to system modeling for performance analysis and optimization. The method presented herein theoretical background is the mathematical field of affine arithmetic chosen for its intrinsic data representation optimal to analysis of the mitigation of variations and refinement of deviations and error analysis. The chosen language of SystemVerilog is beneficial for it is allowing the integration of the validation process and of the verification process for the specific class of mixed signal electrical circuits and systems.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"60 1","pages":"407-410"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84792303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Poly(amide-imide)s for potential nano-actuation applications 聚酰胺-亚胺的潜在纳米驱动应用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400771
Irina Bacosca-Butnaru, E. Hamciuc, M. Brumǎ
{"title":"Poly(amide-imide)s for potential nano-actuation applications","authors":"Irina Bacosca-Butnaru, E. Hamciuc, M. Brumǎ","doi":"10.1109/SMICND.2012.6400771","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400771","url":null,"abstract":"A series of poly(amide imide)s was synthesized to analyse the actuating behaviour using an interferometric method. Thus, different structures were used to obtain polymer films and composites. The results evidenced that for one polymer film the electromechanical nano-actuation had a value of -140 nm while for the composite polymer film with 20% ash powder the value was of 240 nm. The physical properties of the polymers were also investigated which showed high solubility in polar solvents, good film-forming ability, an initial decomposition temperature in the range of 355-510°C and glass transition temperature in the domain of 162-217°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"60 1","pages":"325-328"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84141092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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