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CAS 2012 (International Semiconductor Conference)最新文献

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Multigas sensor based on micro machined hotplates for CO and O2 detection using catalytically modified nano-SnO2 基于微机械热板的多气体传感器用于CO和O2的催化修饰纳米sno2检测
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400670
T. Andreu, C. Fàbregas, F. H. Ramírez, J. Morante
{"title":"Multigas sensor based on micro machined hotplates for CO and O2 detection using catalytically modified nano-SnO2","authors":"T. Andreu, C. Fàbregas, F. H. Ramírez, J. Morante","doi":"10.1109/SMICND.2012.6400670","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400670","url":null,"abstract":"SnO2 nanostructures have been loaded with different amount and types of catalysts. These ones work as active filters that functionally response in a very different way against carbon monoxide and oxygen. The micro machined hotplates contain different thermally and electrically independent membranes integrated in the same chip allowing that one of the active sensing materials is turned to present a higher sensitivity to CO than to O2, whereas the other sensor is mainly turned for detecting O2 variations without any cross talk of temperature. The resistance data obtained from this type of combined sensors as a function of CO and O2 concentrations has been parameterized and modulated for the direct deduction of the both gas concentrations. So, two functions are calculated for the quantification of CO/O2 gas mixtures. A comparison with a reference oxygen sensor based on a perovskite type barium stannate layer of BaSnO3 working as oxygen gas sensor at high temperature and not presenting interfering crosstalk with the CO concentration is also discussed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"15 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82815793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond n型金刚石中无绝缘体纳米晶体管的仿真
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400733
C. Ravariu
{"title":"Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond","authors":"C. Ravariu","doi":"10.1109/SMICND.2012.6400733","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400733","url":null,"abstract":"A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"120 1","pages":"453-456"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85887791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diode modeling for milimeter wave applications based on co-simulation technique 基于联合仿真技术的毫米波应用二极管建模
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400654
A. Takacs, A. Bunea, A. Zair, D. Neculoiu, H. Aubert
{"title":"Diode modeling for milimeter wave applications based on co-simulation technique","authors":"A. Takacs, A. Bunea, A. Zair, D. Neculoiu, H. Aubert","doi":"10.1109/SMICND.2012.6400654","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400654","url":null,"abstract":"This paper addresses the modeling and the co-simulation technique of millimeter wave Schottky diode for millimeter wave applications such as rectennas and detectors. In order to provide accurate simulation models a co-simulation technique based on the combination of full-wave electromagnetic simulations and non-linear circuit modeling is proposed. The obtained results demonstrates a good correlation between simulation and measurement and the proposed methodology can be used for designing high-performing circuits without expensive and time consuming prototyping.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"79 1","pages":"201-204"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88860130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nonideal behavior of a class of Cellular Neural Networks 一类细胞神经网络的非理想行为
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400751
P. M. Puscasu, L. Goras
{"title":"Nonideal behavior of a class of Cellular Neural Networks","authors":"P. M. Puscasu, L. Goras","doi":"10.1109/SMICND.2012.6400751","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400751","url":null,"abstract":"The aim of this paper is to report several new results regarding the nonideal behavior of a class of Cellular Neural Networks at system and transistor levels.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"201 1","pages":"393-396"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75987411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optical and sensory properties of ZnO nanofibrous layers grown by magnetron sputtering 磁控溅射生长ZnO纳米纤维层的光学和感官特性
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400674
L. Ghimpu, I. Tiginyanu, V. Ursaki, O. Lupan, L. Chow, Y. Rudzevich, Yuqing Lin
{"title":"Optical and sensory properties of ZnO nanofibrous layers grown by magnetron sputtering","authors":"L. Ghimpu, I. Tiginyanu, V. Ursaki, O. Lupan, L. Chow, Y. Rudzevich, Yuqing Lin","doi":"10.1109/SMICND.2012.6400674","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400674","url":null,"abstract":"This paper presents optical and sensory properties of ZnO nanofirous layers grown by a cost-effective and fast fabrication method based on magnetron sputtering. The as-prepared nanofibrous layers show good conductive properties which are of interest for gas sensing structures. Their application for hydrogen detection is demonstrated in premiere, and the developed H2 sensor structure exhibits good response / recovery behavior under ultraviolet (UV) light, and good sensitivity. This method is cost-effective and facile and has a great potential for various sensorial applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"36 1","pages":"139-142"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88827453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
How to improve the silicon nanocrystal memory cell performances for low power applications 如何提高硅纳米晶存储电池在低功耗应用中的性能
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400686
V. D. Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, Philippe Boivin, E. Jalaguier, B. D. Salvo, J. Ogier
{"title":"How to improve the silicon nanocrystal memory cell performances for low power applications","authors":"V. D. Marca, J. Amouroux, G. Molas, J. Postel-Pellerin, F. Lalande, Philippe Boivin, E. Jalaguier, B. D. Salvo, J. Ogier","doi":"10.1109/SMICND.2012.6400686","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400686","url":null,"abstract":"In this paper we propose to optimize the 1T silicon nanocrystal (Si-nc) memory cell in order to reduce the energy consumption for low power applications. Optimized Channel Hot Electron Injection (a 4.5V programming window is reached consuming 1nJ) and Fowler-Nordheim programming are analyzed and compared. The tunnel oxide thickness, Si-ncs area coverage and SiN silicon nanocrystals capping layer are adjusted to optimize the data retention and endurance criteria. We present for the first time the endurance characteristics of a Si-nc cell up to 106 cycles with a final programming window of 4V.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"16 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77052425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ballistic electron propagation in a composite metamaterial 复合超材料中的弹道电子传播
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400723
A. Dumitriu, D. Dragoman
{"title":"Ballistic electron propagation in a composite metamaterial","authors":"A. Dumitriu, D. Dragoman","doi":"10.1109/SMICND.2012.6400723","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400723","url":null,"abstract":"The main purpose of this paper is to underline the property of periodic structures consisting of layers with imaginary wavenumbers for ballistic electrons to allow charge carrier propagation in certain energy bands. Such periodic structures are analogous to composite optical metamaterials. In addition, we compare the dependence on energy of two time parameters with relevance for electron pulses and beams: the phase time and the traversal time, respectively.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"70 1","pages":"478-490"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86254583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrochemistry-based maskless nanofabrication 基于电化学的无掩膜纳米制造
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400703
I. Tiginyanu, E. Monaico, V. Popa
{"title":"Electrochemistry-based maskless nanofabrication","authors":"I. Tiginyanu, E. Monaico, V. Popa","doi":"10.1109/SMICND.2012.6400703","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400703","url":null,"abstract":"A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on III-V and II-VI compounds as well as two-dimensional metallo-dielectric structures realized in different geometries. It is shown that photoelectrochemical etching of GaN combined with preliminary low-dose low-energy focused-ion-beam treatment of the sample surface allows one to fabricate in a controlled fashion arrays of nanowires and nanowalls as well as ultrathin membranes and supporting nanocolumns in the same technological route. Possible electronic and photonic applications of the elaborated nanostructures are discussed.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"21-26"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88094826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Poly(amide-imide)s for potential nano-actuation applications 聚酰胺-亚胺的潜在纳米驱动应用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400771
Irina Bacosca-Butnaru, E. Hamciuc, M. Brumǎ
{"title":"Poly(amide-imide)s for potential nano-actuation applications","authors":"Irina Bacosca-Butnaru, E. Hamciuc, M. Brumǎ","doi":"10.1109/SMICND.2012.6400771","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400771","url":null,"abstract":"A series of poly(amide imide)s was synthesized to analyse the actuating behaviour using an interferometric method. Thus, different structures were used to obtain polymer films and composites. The results evidenced that for one polymer film the electromechanical nano-actuation had a value of -140 nm while for the composite polymer film with 20% ash powder the value was of 240 nm. The physical properties of the polymers were also investigated which showed high solubility in polar solvents, good film-forming ability, an initial decomposition temperature in the range of 355-510°C and glass transition temperature in the domain of 162-217°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"60 1","pages":"325-328"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84141092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Iodine irradiation induced defects in crystalline silicon 碘辐照引起的晶体硅缺陷
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400787
A. Slav, A. Lepadatu, C. Palade, I. Stavarache, G. Iordache, M. Ciurea, S. Lazanu, M. R. Mitroi
{"title":"Iodine irradiation induced defects in crystalline silicon","authors":"A. Slav, A. Lepadatu, C. Palade, I. Stavarache, G. Iordache, M. Ciurea, S. Lazanu, M. R. Mitroi","doi":"10.1109/SMICND.2012.6400787","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400787","url":null,"abstract":"N-type P-doped silicon single crystals with resistivity higher than 8000 Ωcm were irradiated with 127I6+ ions of 28 MeV kinetic energy. The penetration of the ions through the target and the processes of energy loss were simulated using the CTRIM Monte Carlo code, and point defect production was calculated in the frame of our diffusion-reaction model. Trapping phenomena were investigated using the method of thermally stimulated currents without applied bias. The modeling of the current-temperature curves takes into consideration both point defects and stress-type trapping centers, produced by the ions stopped into the crystal.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"20 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90032164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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