{"title":"n型金刚石中无绝缘体纳米晶体管的仿真","authors":"C. Ravariu","doi":"10.1109/SMICND.2012.6400733","DOIUrl":null,"url":null,"abstract":"A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"120 1","pages":"453-456"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond\",\"authors\":\"C. Ravariu\",\"doi\":\"10.1109/SMICND.2012.6400733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"120 1\",\"pages\":\"453-456\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
一个类似的纳米晶体管，以前在硅中提出，现在在金刚石中模拟。转移特性的研究很少，但它们证明了这种纳米晶体管相对于横向场发射器件的主要特点-跨导灵敏度。在本文中，无绝缘体- NOI晶体管具有优越的性能。优化的模拟器件具有2nm腔体的Diamond On Oxide固体结构，最大漏极电流为8.9nA，跨导2.4nA/V，漏电流在1pA以下。
Simulations of the Nothing On Insulator nano-transistor implemented in n-type diamond
A similar nano-transistor, previously proposed in silicon, is now simulated in diamond. The transfer characteristics were poorly investigated, but they prove the main distinctive feature of this nano-transistor versus the lateral field emission devices - the transconductance sensitivity. In this paper, the Nothing On Insulator - NOI transistor offers superior performances. The optimum simulated device has a Diamond On Oxide solid structure with 2nm cavity, which offers a maximum drain current of 8.9nA, a transconductance of 2.4nA/V and leakage currents under 1pA.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
