发布求助
文献互助 智能选刊 最新文献

CAS 2012 (International Semiconductor Conference)最新文献

筛选
英文 中文
Photocatalytic membrane system: Obtaining procedure and environmental application 光催化膜系统:制备过程及环境应用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400773
C. Orbeci, G. Nechifor, I. Untea
{"title":"Photocatalytic membrane system: Obtaining procedure and environmental application","authors":"C. Orbeci, G. Nechifor, I. Untea","doi":"10.1109/SMICND.2012.6400773","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400773","url":null,"abstract":"This study reveals the synthesis of a membrane system by a simple and efficient procedure. The conditions used for preparing a membrane system to a substrate have a great effect on its performance. The determination of a suitable immobilisation procedure for specific application becomes complicated with the methods developed over the years. A hybrid coating of fiberglass served as substrate to obtain a photocatalytic system. The working procedure is based on the immersion of fiberglass in suspension consisting of sodium silicate solution and titanium dioxide. The new synthesised membrane system was characterized using X-ray spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The present study is focused on the procedure for obtaining new materials for environmental applications and performance evaluation of membrane system in advanced oxidation processes. The photocatalytic activity of the membrane system was evaluated through the oxidation process of organic compounds from wastewater. A synthetic solution by 4-chlorophenol was used as test substance. Removal of phenols compounds from wastewater is extremely important from an environmental perspective.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"5 1","pages":"317-320"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85012192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane 基于纳米纤维ZnO层和聚硅烷结构的压电性研究
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400780
L. Ghimpu, V. Cojocaru, M. Soroceanu, L. Săcărescu, A. Katashev, V. Harabagiu, I. Tiginyanu
{"title":"Study of piezoelectrycity in structures based on nanofibrous ZnO layers and polysilane","authors":"L. Ghimpu, V. Cojocaru, M. Soroceanu, L. Săcărescu, A. Katashev, V. Harabagiu, I. Tiginyanu","doi":"10.1109/SMICND.2012.6400780","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400780","url":null,"abstract":"Zinc oxide films were deposited by method rf magnetron sputtering in a mixed environment of oxygen and argon on two types of substrates, glass and silicon substrates with different orientations, by varying the deposition parameters in order to obtain high-quality ZnO nanostructured layers. An atomic force microscope was used to measure the piezoelectricity in nanofibrous layers and poly [methyl (H) silane]. The interaction between the type of semiconductor/poly[methyl(H)silane] and the applied electric field has proved that the given structures are piezoelectric materials useful for fabrication of optoelectronic devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"120 1","pages":"295-298"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76863353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On magnetic nanoparticles detection using planar Hall effect sensors 基于平面霍尔效应传感器的磁性纳米颗粒检测研究
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400774
M. Volmer, M. Avram
{"title":"On magnetic nanoparticles detection using planar Hall effect sensors","authors":"M. Volmer, M. Avram","doi":"10.1109/SMICND.2012.6400774","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400774","url":null,"abstract":"In this paper we present aspects concerning magnetic nanoparticles detection using a planar Hall effect magnetometer, disk-shaped of 1mm diameter, build from a single Permalloy layer, 20 nm thick, deposited on oxidized Si substrate. This device allows us to measure the stray magnetic field generated by superparamagnetic beads which are magnetized by an external field. During the experiments we found strong sensor signal dependence, both in shape and magnitude, with the particles at different positions. The results are explained by means of micromagnetic simulations were magnetostatic interactions between magnetic nanobeads and sensor are clearly highlighted.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"40 1","pages":"313-316"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80950772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Porous silicon decorated metallic nanoparticles for growing vertically aligned carbon nanotubes 用于生长垂直排列碳纳米管的多孔硅修饰金属纳米颗粒
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400692
L. Veca, F. Craciunoiu, M. Kusko, M. Danila, A. Dinescu
{"title":"Porous silicon decorated metallic nanoparticles for growing vertically aligned carbon nanotubes","authors":"L. Veca, F. Craciunoiu, M. Kusko, M. Danila, A. Dinescu","doi":"10.1109/SMICND.2012.6400692","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400692","url":null,"abstract":"Carbon nanotubes have been envisioned as promising functional materials in nanoelectronics and electron field emitters. All these applications require that the CNT are highly oriented. There are many studies to improve the growth process but only few research studies have investigated new methods to deposit metallic nanoparticles on the porous silicon. Thus this paper is aiming at synthesizing metallic nanoparticles on top of porous silicon.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"67 1","pages":"79-82"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81120002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nonlinear plasmonic couplers 非线性等离子体耦合器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400673
C. Kusko
{"title":"Nonlinear plasmonic couplers","authors":"C. Kusko","doi":"10.1109/SMICND.2012.6400673","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400673","url":null,"abstract":"In this work we have numerically investigated by employing the finite difference time domain (FDTD) method the coupling between two metal-dielectric-metal (MDM) plasmonic waveguides supporting symmetric forward propagating fundamental modes, one of them presenting a Kerr non-linearity. A coupling analysis is performed in order to investigate the all - optical switching properties of this directional coupler. This analysis was performed for optimization of this coupler in terms of length, modal characteristics of the waveguides as well as the input power.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"63 1","pages":"143-146"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81190159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Distributed feedback lasers with photon-photon-resonance-enhanced modulation bandwidth 光子-光子共振增强调制带宽的分布式反馈激光器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400678
M. Dumitrescu, A. Laakso, J. Viheriala, T. Uusitalo, M. Kamp, P. Uusimaa
{"title":"Distributed feedback lasers with photon-photon-resonance-enhanced modulation bandwidth","authors":"M. Dumitrescu, A. Laakso, J. Viheriala, T. Uusitalo, M. Kamp, P. Uusimaa","doi":"10.1109/SMICND.2012.6400678","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400678","url":null,"abstract":"Multi-section distributed-feedback lasers with surface gratings have been fabricated without re-growth by employing ultraviolet nanoimprint lithography. High-frequency photon-photon resonance was exploited to extend the direct modulation bandwidth beyond the conventional limits set by the carrier-photon resonance.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"46 1","pages":"123-126"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72907531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Modelling 2DEG charges in AlGaN/GaN heterostructures 模拟AlGaN/GaN异质结构中的2DEG电荷
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400760
G. Longobardi, F. Udrea, S. Sque, J. Croon, F. Hurkx, E. Napoli, J. Sonsky
{"title":"Modelling 2DEG charges in AlGaN/GaN heterostructures","authors":"G. Longobardi, F. Udrea, S. Sque, J. Croon, F. Hurkx, E. Napoli, J. Sonsky","doi":"10.1109/SMICND.2012.6400760","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400760","url":null,"abstract":"In this paper we compare different approaches to calculating the charge density in the 2DEG layer of AlGaN/GaN HEMTs. The methods used are (i) analytical theory implemented in MATLAB, (ii) finite-element analysis using semiconductor TCAD software that implements only the Poisson and continuity equations, and (iii) 1D software that solves the Poisson and Schrödinger equations self-consistently. By using the 1D Poisson-Schrödinger solver, we highlight the consequences of neglecting the Schrödinger equation. We conclude that the TCAD simulator predicts with a reasonable level of accuracy the electron density in the 2DEG layer for both a conventional HEMT structure and one featuring an extra GaN cap layer. In addition, while the sheet charge density is not significantly affected by including Schrödinger, its confinement in the channel is found to be modified.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"222 1","pages":"363-366"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79925774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 三维异质外延:不匹配材料与硅单片集成的新途径
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400698
C. Falub, T. Kreiliger, A. Taboada, F. Isa, D. Chrastina, G. Isella, E. Muller, M. Meduňa, R. Bergamaschini, A. Marzegalli, E. Bonera, F. Pezzoli, L. Miglio, P. Niedermann, A. Neels, A. Pezous, R. Kaufmann, A. Dommann, H. von Kanel
{"title":"Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon","authors":"C. Falub, T. Kreiliger, A. Taboada, F. Isa, D. Chrastina, G. Isella, E. Muller, M. Meduňa, R. Bergamaschini, A. Marzegalli, E. Bonera, F. Pezzoli, L. Miglio, P. Niedermann, A. Neels, A. Pezous, R. Kaufmann, A. Dommann, H. von Kanel","doi":"10.1109/SMICND.2012.6400698","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400698","url":null,"abstract":"In the quest for a Ge x-ray detector mono-lithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks. It consists of replacing the conventional continuous layers by space-filling arrays of strain- and defect-free Ge crystals, the width, height and shape of which are controlled by tuning epitaxial growth onto micrometer-sized features deeply etched into Si-substrates. Heterojunctions formed between the Ge-crystals and the Si-substrate exhibit the required rectifying diode behavior with low dark currents (<;1 mA/cm2).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"162 1","pages":"45-50"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76759329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new small size ring coupler based on fully distributed Composite Right/Left-Handed structures 一种基于全分布左/右复合结构的小尺寸环形耦合器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400651
S. Simion
{"title":"A new small size ring coupler based on fully distributed Composite Right/Left-Handed structures","authors":"S. Simion","doi":"10.1109/SMICND.2012.6400651","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400651","url":null,"abstract":"A new topology of small size ring coupler is proposed. It consists of fully distributed balanced CRLH (Composite Right/Left-Handed) based phase shifters, designed for a frequency which is significantly greater than the coupler operating frequency. Firstly, the equivalent circuit of the ring coupler consisting of ideal transmission lines is designed for operating frequency chosen at 1.8 GHz, and then this circuit is analysed numerically. The coupler layout is also designed and numerically analysed using a 3D electromagnetic simulator. The proposed ring coupler has about 50% smaller area comparing to the conventional configuration, this being an advantage for low operating frequency. Also, comparing to other small size ring coupler topologies reported in the literature, the proposed coupler may be fabricated using standard one mask technological process, as well as for the conventional ring coupler configuration.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"213-216"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87696540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mesoporous ceria-zirconia solid solutions as oxygen gas sensing material using high temperature hot plates 介孔氧化锆固溶体作为高温热板氧敏材料
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400786
S. A. Ghom, T. Andreu, C. Zamani, J. Morante
{"title":"Mesoporous ceria-zirconia solid solutions as oxygen gas sensing material using high temperature hot plates","authors":"S. A. Ghom, T. Andreu, C. Zamani, J. Morante","doi":"10.1109/SMICND.2012.6400786","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400786","url":null,"abstract":"Mesoporous ceria and ceria-zirconia solid solutions have been synthesized following a route based on the use of silica hard template. Two different structures have been selected, one based on a three dimensional gyroidal structure, named KIT6, and other based on a two dimensional layered structure named SBA15. The presence of zirconium in the ceria sub lattice enhances the capability to transform Ce+4 to Ce+3 such as it is proved from the thermogravimetry measurements that show a large increase of the oxygen storage capacity. Ce(1-x)ZrxO2 solid solutions prepared making replicas of previously synthesized mesoporous silica have been characterized and tested under different oxygen-containing atmospheres at sensing temperatures above 500oC with oxygen variation between 1% to 100% of oxygen. This binary compound oxide present a variation of its electrical conductivity with the oxygen partial pressure that follow a potential law R=Ro[O2]1/n with n = 4 corroborating that the sensing mechanism is dominated by electronic conductivity processes related to the contribution of the Ce+3. Therefore, these high stable mesoporous materials with high active surface become a promising candidate as oxygen sensing materials for gas sensing hotplate platforms.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"13 1","pages":"277-280"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87123818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信