Low power and highly reliable gates using arrays of optimally sized transistors

Valeriu Beiu, L. Iordaconiu, A. Beg, W. Ibrahim, F. Kharbash
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引用次数: 5

Abstract

This paper introduces an enabling transistor sizing method for classical CMOS gates in advanced technology nodes through simple examples. The well-known CMOS inverter is used here both for presenting the different sizing options as well as for simulations for weighting performances. These preliminary results show that sizing is far from exhausting its potential as still allowing to: (i) improve delay and power; (ii) increase the static noise margins (SNMs); (iii) modify threshold voltages (VTH); and also (iv) reduce VTH variations (σVTH).
采用最佳尺寸晶体管阵列的低功耗和高可靠性门
本文通过简单的实例,介绍了一种在先进技术节点上实现经典CMOS栅极晶体管尺寸的方法。这里使用了众所周知的CMOS逆变器,用于呈现不同的尺寸选项以及加权性能的模拟。这些初步结果表明,尺寸远没有耗尽其潜力,仍然允许:(1)改善延迟和功率;(ii)增加静态噪音裕度;修改阈值电压(VTH);(4)减小VTH变化(σVTH)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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