SAW GaN/Si基谐振器:建模和实验验证

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400656

A. Stefanescu, A. Muller, G. Konstantinidis, V. Buiculescu, A. Dinescu, A. Stavrinidis, D. Neculoiu, A. Cismaru

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引用次数: 3

摘要

我们报告了GaN/Si衬底表面声波谐振器(SAW)的新模型，工作频率高于5 GHz。该器件由指间换能器(IDT)组成，指间和指间间距为200nm。给出了从一维等效电路到三维有限元模型等不同的器件建模实例。仿真结果与单端口声呐器件和双端口谐振腔声呐器件的实验结果进行了验证。

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SAW GaN/Si based resonators: Modeling and experimental validation

We report on new models developed for surface acoustic wave resonators (SAW) on GaN/Si substrate working on frequencies above 5 GHz. The devices are composed of interdigital transducers (IDT) with finger and interdigit spacings 200nm wide. Different examples of modeling these devices, from 1D equivalent circuit to 3D FEM model are presented. The simulations are validated with experimental results for one port SAW and for a two port resonator SAW devicse.

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CAS 2012 (International Semiconductor Conference)

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