p-NiO/ITO transparent heterojunction — Preparation and characterization

The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.