发布求助
文献互助 智能选刊 最新文献

CAS 2012 (International Semiconductor Conference)最新文献

筛选
英文 中文
SOI sensing technologies for harsh environment 恶劣环境SOI传感技术
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400708
F. Udrea, S. Z. Ali, M. Brezeanu, V. Dumitru, O. Buiu, I. Poenaru, M. F. Chowdhury, A. De Luca, J. Gardner
{"title":"SOI sensing technologies for harsh environment","authors":"F. Udrea, S. Z. Ali, M. Brezeanu, V. Dumitru, O. Buiu, I. Poenaru, M. F. Chowdhury, A. De Luca, J. Gardner","doi":"10.1109/SMICND.2012.6400708","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400708","url":null,"abstract":"This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"9 1","pages":"3-10"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75908017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Cuspidine-type Solid Oxides for Fuel Cell applications 用于燃料电池的cuspidin型固体氧化物
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400767
N. Cioateră
{"title":"Cuspidine-type Solid Oxides for Fuel Cell applications","authors":"N. Cioateră","doi":"10.1109/SMICND.2012.6400767","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400767","url":null,"abstract":"Cuspidine-type solid oxides having the compositions La<sub>4</sub>(Ti<sub>2</sub>O<sub>8</sub>)O<sub>2</sub> and La<sub>4</sub>(Ti<sub>1.5</sub>Al<sub>0.5</sub>O<sub>8-δ</sub>)O<sub>2</sub> were synthesized using a modified Pechini method at much lower temperature than the one corresponding to the state of the art ceramic method. Their thermal behaviour was evaluated using TG/DSC techniques. Reduction-oxidation processes were evidenced on both heating and cooling stages, their amplitude depending on gas atmosphere and sample composition.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"45 2","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72604560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Manipulating ballistic electrons by refraction at an interface between isotropic and anisotropic media 在各向同性和各向异性介质之间的界面上通过折射操纵弹道电子
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400682
A. Radu, S. Iftimie, D. Dragoman
{"title":"Manipulating ballistic electrons by refraction at an interface between isotropic and anisotropic media","authors":"A. Radu, S. Iftimie, D. Dragoman","doi":"10.1109/SMICND.2012.6400682","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400682","url":null,"abstract":"Electron beams can be steered or collimated after refraction at an interface between an isotropic medium and an isotropic one. In this situation the refraction can be negative or positive as a function of the incidence angle. The materials' parameters influence the steering angle, whereas the energy of the ballistic electrons determines the degree of collimation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"57 1","pages":"113-116"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80491470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy 等离子体辅助分子束外延沉积ALN介电膜的充放电过程
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400785
M. Koutsoureli, A. Adikimenakis, L. Michalas, E. Papandreou, A. Pantazis, G. Konstantinidis, A. Georgakilas, G. Papaioannou
{"title":"Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy","authors":"M. Koutsoureli, A. Adikimenakis, L. Michalas, E. Papandreou, A. Pantazis, G. Konstantinidis, A. Georgakilas, G. Papaioannou","doi":"10.1109/SMICND.2012.6400785","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400785","url":null,"abstract":"In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"255 1","pages":"281-284"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76187252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's 4H-SiC常关断JFET沟道中的电压势垒模型
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400762
L. Di Benedetto, S. Bellone
{"title":"A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's","authors":"L. Di Benedetto, S. Bellone","doi":"10.1109/SMICND.2012.6400762","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400762","url":null,"abstract":"A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"355-358"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82184909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Damping effects in MEMS resonators MEMS谐振器中的阻尼效应
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400695
M. Gologanu, C. Bostan, V. Avramescu, O. Buiu
{"title":"Damping effects in MEMS resonators","authors":"M. Gologanu, C. Bostan, V. Avramescu, O. Buiu","doi":"10.1109/SMICND.2012.6400695","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400695","url":null,"abstract":"Damping effects are very important in MEMS-based sensors and actuators. In this paper we use analytical models and finite element (FE) computations to quantify the energy losses due to viscous fluid damping, acoustic radiation and thermo-elastic damping. To treat the case where squeeze/slide film models can not be applied, we have implemented in a commercial FE package a new incompressible flow solver based on a gauge formulation. We are thus able to solve for full flows around complex 3D geometries in the frequency domain and predict viscous damping of resonant MEMS structures. The full methodology is exemplified on the response of a MEMS silicon resonator, including acoustic driving and piezoelectric sensing.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"39 1","pages":"67-76"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90616846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Experimental observations in 2D phononic structure with granular crystals 颗粒晶体二维声子结构的实验观察
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400779
C. Pachiu
{"title":"Experimental observations in 2D phononic structure with granular crystals","authors":"C. Pachiu","doi":"10.1109/SMICND.2012.6400779","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400779","url":null,"abstract":"The author deal with a two-dimensional phononic structure (PC) composed by a matrix of nylon with cylindrical holes filled with air. The fabrication process is 3D selective laser sintering where a pulsed laser is used to raise a powder at the temperature of diffusion to a solid state. A piezoelectric transducer emits a longitudinal wave and another transducer acts as a receiver, this basic set-up leads to the experimental spectrum of the transmission coefficient in the PC. The results are compared with the numerical dates and dispersion curves (ω, k), the existences of forbidden frequency bands are experimentally shown. The extension of this experimental study into other phononic crystals could lead to new physical phenomena at different scales and novel design of engineering devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"115 1","pages":"299-302"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89315329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of parasitic substrate diodes on load transient response of three-terminal adjustable voltage regulators 寄生衬底二极管对三端可调稳压器负载瞬态响应的影响
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400727
A. Bajenaru, L. Radoias, G. Dilimot, G. Brezeanu
{"title":"The influence of parasitic substrate diodes on load transient response of three-terminal adjustable voltage regulators","authors":"A. Bajenaru, L. Radoias, G. Dilimot, G. Brezeanu","doi":"10.1109/SMICND.2012.6400727","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400727","url":null,"abstract":"This paper presents a detailed analysis of the influence of parasitic substrate diodes on the load transient response of three-terminal adjustable voltage regulators with the substrate connected to the output. Two simple solutions for improving the transient behaviour are then presented. A 1A voltage regulator was implemented in a single metal layer BCD technology. Using no additional chip area, the undershoot has been reduced from 250mV to less than 30mV, for an output voltage of 5V. The duration of the undershoot is accordingly reduced.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"76 1","pages":"471-474"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88852735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors 薄膜晶体管中ZnO: Al有源沟道层的横截面结构和组成的纳米尺度分析
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400770
E. Vasile, S. Mihaiu, R. Plugaru
{"title":"Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors","authors":"E. Vasile, S. Mihaiu, R. Plugaru","doi":"10.1109/SMICND.2012.6400770","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400770","url":null,"abstract":"High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"27 1","pages":"329-332"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76799205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transport mechanisms in SiO2 films with embedded Germanium nanoparticles 嵌入纳米锗的SiO2薄膜中的输运机制
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400689
C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea
{"title":"Transport mechanisms in SiO2 films with embedded Germanium nanoparticles","authors":"C. Palade, A. Lepadatu, I. Stavarache, A. Maraloiu, V. Teodorescu, M. Ciurea","doi":"10.1109/SMICND.2012.6400689","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400689","url":null,"abstract":"This paper reports on the conduction mechanisms in amorphous SiO2 films with embedded Ge nanoparticles. For this, measurements of current-temperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"4 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73052138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信