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CAS 2012 (International Semiconductor Conference)最新文献

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Applications of devices with multi-barrier structures in graphene 石墨烯中多势垒结构器件的应用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400687
A. Zubarev, D. Dragoman
{"title":"Applications of devices with multi-barrier structures in graphene","authors":"A. Zubarev, D. Dragoman","doi":"10.1109/SMICND.2012.6400687","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400687","url":null,"abstract":"We investigate the transmission of divergent electron beams through a succession of barriers in graphene, in order to search for possible applications of these structures in nanoelectronics. We show that the periodically gated structures are very sensitive to the variation of the external electric field, such that they can be used to modulate the transmission coefficient of electrons at oblique incidence by a slight change in the potential energy of the barriers and to steer electron beams.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"22 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86722384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing 电子辐照对热退火后1 ev GaInNAs薄膜光致发光的影响
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400677
E. Pavelescu, R. Kudrawiec, N. Bǎlţǎţeanu, S. Spânulescu, M. Guina
{"title":"Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing","authors":"E. Pavelescu, R. Kudrawiec, N. Bǎlţǎţeanu, S. Spânulescu, M. Guina","doi":"10.1109/SMICND.2012.6400677","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400677","url":null,"abstract":"We have investigated the influence of 7-MeV electron irradiation to the dose of 1.8×1016 cm-2 and subsequent rapid thermal annealing on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy. The study has been done by means of 9-K photoluminescence (PL) in conjunction with 300-K photoreflectance (PR) spectroscopy and x-ray diffraction measurements. A drastic deterioration in PL has been seen upon the electron irradiation. When rapid thermally annealed at 800 oC for 1 min an enhancement in PL has been observed as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found to be mainly due to an irradiation-promoted enhancement in In-N bonds formation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"26 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78002436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Overcoming leakage current by output precharging in error amplifiers 误差放大器输出预充电克服漏电流
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400754
V. Anghel, C. Bartholomeusz, G. Pristavu, G. Brezeanu
{"title":"Overcoming leakage current by output precharging in error amplifiers","authors":"V. Anghel, C. Bartholomeusz, G. Pristavu, G. Brezeanu","doi":"10.1109/SMICND.2012.6400754","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400754","url":null,"abstract":"Initial control loop conditions are essential in switching circuits where fault detection blocks are present, in order to avoid permanent fault triggers. Furthermore, multi-channel switching interference may affect circuit functionality and cause additional fault triggers. Error amplifiers aquire the difference between sensed and reference signals and output a correction voltage. We propose a solution which ensures that the initial correction voltage does not determine a perpetual fault condition. The proposed solution is implemented in a current mode buck control loop, which delivers constant current through a load.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"5 1","pages":"381-384"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83725396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Semiconductor quantum dots as highly effective biosensing tools 半导体量子点是高效的生物传感工具
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400690
R. Buiculescu, N. Chaniotakis
{"title":"Semiconductor quantum dots as highly effective biosensing tools","authors":"R. Buiculescu, N. Chaniotakis","doi":"10.1109/SMICND.2012.6400690","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400690","url":null,"abstract":"In this paper, highly luminescent core/shell CdSe/ZnS quantum dots have been used in the construction of two sensing systems for the detection of oligonucleotide hybridization and enzymatic reaction by covalent binding the biomolecules directly to the surface of the quantum dots. It is shown that the oligonucleotide-modified quantum dots have proven to be able to detect large sequences of mismatched bases through the hybridization process, while the system based on biosilica encapsulated enzyme-modified quantum dots was found to be suitable for monitoring low substrate concentrations in solution and with a storage lifetime of more than 2 months.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"16 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87388109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lead-free galvanic oxygen sensors — A conceptual approach 无铅电氧传感器。概念方法
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400667
C. Cobianu, B. Șerban, V. Avramescu, B. Hobbs, K. Pratt, M. Willett
{"title":"Lead-free galvanic oxygen sensors — A conceptual approach","authors":"C. Cobianu, B. Șerban, V. Avramescu, B. Hobbs, K. Pratt, M. Willett","doi":"10.1109/SMICND.2012.6400667","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400667","url":null,"abstract":"Within this paper we present a thermodynamic methodology for the selection of non-toxic metals which could be used as lead-free consumable anodes in electrochemical galvanic oxygen sensors. Starting from thermodynamic nobility theory, metals like copper, bismuth or antimony are proposed to replace lead in future galvanic O2 sensors. The thermodynamic theory provides voltage windows which increase from copper (0.7 V), to bismuth (0.857 V) and antimony (1.076 V). The experimental voltage windows are smaller than the theoretical ones, but these experimental values increase in the same order from Cu, to Bi and Sb, as predicted by our methodology.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"68 1","pages":"161-164"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85306189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nanostructured Fe doped ZnO: TiO2 for gas sensors applications 纳米结构Fe掺杂ZnO: TiO2在气体传感器中的应用
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400768
S. Somacescu, A. Dinescu, P. Osiceanu
{"title":"Nanostructured Fe doped ZnO: TiO2 for gas sensors applications","authors":"S. Somacescu, A. Dinescu, P. Osiceanu","doi":"10.1109/SMICND.2012.6400768","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400768","url":null,"abstract":"Nanostructured Fe doped ZnO: TiO2 with crystalline framework and porous structure were successfully synthesized by hydrothermal route, using ionic and non-ionic surfactants as templates. The structure morphology, surface chemistry and sensing properties were investigated. The results highlighted that ZnO: TiO2 materials show a wurtzite type structure with TiO2 anatase phase in higher proportion, while a minor phase TiO2 rutile was observed for the materials containing Fe. Surface chemistry revealed the elements quantitatively detected on the surface and their chemical environment. Nanostructured Fe doped ZnO: TiO2 materials were sensitive to toxic gases as CO and NO2 at 300 oC and to a small gas concentration in the range of ~3ppm.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"337-340"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84731378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A High performance piezoceramic material for a vibration transducer for balancing of rotating parts 一种用于平衡旋转部件的振动传感器的高性能压电陶瓷材料
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400781
C. Miclea, M. Cioangher, C. Miclea, L. Trupina, C. Miclea, L. Amarande, S. Spânulescu, R. Faibis
{"title":"A High performance piezoceramic material for a vibration transducer for balancing of rotating parts","authors":"C. Miclea, M. Cioangher, C. Miclea, L. Trupina, C. Miclea, L. Amarande, S. Spânulescu, R. Faibis","doi":"10.1109/SMICND.2012.6400781","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400781","url":null,"abstract":"A high performance piezoceramic material of PZT type, doped with 6 atomic % W, was prepared in order to be used as sensing element for a vibration transducer used to equilibrate the motor-fan group of auto vehicles. The piezoelectric parameters of material showed high values which recommended it for the vibration transducer. The transducer consists of a ring shaped active element sandwiched between two steel blocks. The transducer works in quasistatic regime, at frequencies much lower than the resonance frequency, being tightly screwed in the measurement system by a metallic cover attached at the back end.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"47 2 1","pages":"291-294"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83187940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration 雪崩门控二极管结构的商用MOS晶体管的共阳极放大器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400747
A. Rusu, L. Dobrescu, M. Enachescu, C. Burileanu
{"title":"Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration","authors":"A. Rusu, L. Dobrescu, M. Enachescu, C. Burileanu","doi":"10.1109/SMICND.2012.6400747","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400747","url":null,"abstract":"In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"40 1","pages":"403-406"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81600473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SiC Schottky Diode surge current analysis and application design using behavioral SPICE models 基于行为SPICE模型的SiC肖特基二极管浪涌电流分析与应用设计
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400761
V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán
{"title":"SiC Schottky Diode surge current analysis and application design using behavioral SPICE models","authors":"V. Banu, P. Godignon, X. Jordà, M. Alexandru, J. Millán","doi":"10.1109/SMICND.2012.6400761","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400761","url":null,"abstract":"This work presents thermal analysis results of surge current test performed on pressed-pack encapsulated SiC Schottky Diodes. An original method for temperature evaluation during high current pulses, based on behavioural SPICE models, was used to approach the analysis. Silicon Carbide (SiC) is one of the most adequate wide bandgap (WBG) material for manufacturing high temperature and high power electronics. However, the actual generation of commercially available SiC power diodes (Schottky and JBS) shows a maximum junction temperature of only 175°C. This important derating of the SiC devices, which theoretically are capable to sustain much higher temperatures, is due to the packaging limitation. The aim of our investigations is to overcome the actual limitations of SiC device packaging and to obtain reliable SiC devices able to operate at temperatures over 300°C.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"128 1","pages":"359-362"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91052425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Substrate leakage current influence on bandgap voltage references in automotive applications 汽车应用中基片泄漏电流对带隙参考电压的影响
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400752
L. Radoias, C. Zegheru, G. Brezeanu
{"title":"Substrate leakage current influence on bandgap voltage references in automotive applications","authors":"L. Radoias, C. Zegheru, G. Brezeanu","doi":"10.1109/SMICND.2012.6400752","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400752","url":null,"abstract":"This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"78 1","pages":"389-392"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91098312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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