{"title":"汽车应用中基片泄漏电流对带隙参考电压的影响","authors":"L. Radoias, C. Zegheru, G. Brezeanu","doi":"10.1109/SMICND.2012.6400752","DOIUrl":null,"url":null,"abstract":"This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"78 1","pages":"389-392"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Substrate leakage current influence on bandgap voltage references in automotive applications\",\"authors\":\"L. Radoias, C. Zegheru, G. Brezeanu\",\"doi\":\"10.1109/SMICND.2012.6400752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"78 1\",\"pages\":\"389-392\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Substrate leakage current influence on bandgap voltage references in automotive applications
This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).
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