E. Pavelescu, R. Kudrawiec, N. Bǎlţǎţeanu, S. Spânulescu, M. Guina
{"title":"电子辐照对热退火后1 ev GaInNAs薄膜光致发光的影响","authors":"E. Pavelescu, R. Kudrawiec, N. Bǎlţǎţeanu, S. Spânulescu, M. Guina","doi":"10.1109/SMICND.2012.6400677","DOIUrl":null,"url":null,"abstract":"We have investigated the influence of 7-MeV electron irradiation to the dose of 1.8×1016 cm-2 and subsequent rapid thermal annealing on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy. The study has been done by means of 9-K photoluminescence (PL) in conjunction with 300-K photoreflectance (PR) spectroscopy and x-ray diffraction measurements. A drastic deterioration in PL has been seen upon the electron irradiation. When rapid thermally annealed at 800 oC for 1 min an enhancement in PL has been observed as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found to be mainly due to an irradiation-promoted enhancement in In-N bonds formation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"26 1","pages":"127-130"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing\",\"authors\":\"E. Pavelescu, R. Kudrawiec, N. Bǎlţǎţeanu, S. Spânulescu, M. Guina\",\"doi\":\"10.1109/SMICND.2012.6400677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the influence of 7-MeV electron irradiation to the dose of 1.8×1016 cm-2 and subsequent rapid thermal annealing on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy. The study has been done by means of 9-K photoluminescence (PL) in conjunction with 300-K photoreflectance (PR) spectroscopy and x-ray diffraction measurements. A drastic deterioration in PL has been seen upon the electron irradiation. When rapid thermally annealed at 800 oC for 1 min an enhancement in PL has been observed as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found to be mainly due to an irradiation-promoted enhancement in In-N bonds formation.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"26 1\",\"pages\":\"127-130\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing
We have investigated the influence of 7-MeV electron irradiation to the dose of 1.8×1016 cm-2 and subsequent rapid thermal annealing on luminescence performance of lattice-matched 1-eV GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy. The study has been done by means of 9-K photoluminescence (PL) in conjunction with 300-K photoreflectance (PR) spectroscopy and x-ray diffraction measurements. A drastic deterioration in PL has been seen upon the electron irradiation. When rapid thermally annealed at 800 oC for 1 min an enhancement in PL has been observed as compared to the reference non-irradiated sample. The irradiation-promoted enhancement in PL upon annealing has been accompanied by a small additional blue shift (BS) of the PL. This additional annealing-induced BS has been found to be mainly due to an irradiation-promoted enhancement in In-N bonds formation.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
