雪崩门控二极管结构的商用MOS晶体管的共阳极放大器

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400747

A. Rusu, L. Dobrescu, M. Enachescu, C. Burileanu

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引用次数: 1

摘要

本文提出了一种采用门控二极管的击穿电压放大器。二极管偏置恒定电流，并在公共阳极配置。所测量的二极管是从具有衬底引脚的商用nMOS晶体管获得的。本文将对该电路进行分析，理论分析结果与实测结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration

In this paper we present a voltage amplifier using a gated diode in breakdown regime. The diode is biased with a constant current and is in common anode configuration. The measured diode was obtained from a commercial nMOS transistor that has the substrate pin available. The circuit will be analyzed in this paper and the theory is in good agreement with the measurements.

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CAS 2012 (International Semiconductor Conference)

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