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CAS 2012 (International Semiconductor Conference)最新文献

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High temperature characterization system for silicon carbide devices 碳化硅器件高温表征系统
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400734
L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu
{"title":"High temperature characterization system for silicon carbide devices","authors":"L. Teodorescu, F. Draghici, G. Brezeanu, I. Rusu","doi":"10.1109/SMICND.2012.6400734","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400734","url":null,"abstract":"In this paper it is described a design technique used to collect and analyse power devices characteristics in high temperatures domain. Following this technique, a complete hardware and software platform is built for thermal characterization of power devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"18 1","pages":"449-452"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91495546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Aspects concerning cycle-to-cycle jitter in a comparator based relaxation oscillator 基于比较器的弛豫振荡器中周期到周期抖动的几个方面
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400740
M. Mocanu, M. Gurzun, L. Goras
{"title":"Aspects concerning cycle-to-cycle jitter in a comparator based relaxation oscillator","authors":"M. Mocanu, M. Gurzun, L. Goras","doi":"10.1109/SMICND.2012.6400740","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400740","url":null,"abstract":"In this paper several formulas for cycle-to-cycle jitter in a simple comparator based relaxation oscillator are derived. The main contribution consists in the fact that the jitter produced by the white noise sources is evaluated by taking into consideration the slew-rate of the comparator.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"131 1","pages":"425-428"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89032861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs 一种改善低压CMOS LDOs暂态负载调节的新电路技术
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400756
C. Stănescu
{"title":"A new circuit technique for improving transient load regulation in low-voltage CMOS LDOs","authors":"C. Stănescu","doi":"10.1109/SMICND.2012.6400756","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400756","url":null,"abstract":"The paper presents a new circuit technique intended to improve the transient load regulation in dual-OTA CMOS LDOs, especially for low input and output voltages. The duration of overshoot that appears during fast transient load regulation is made quite small, improving the recovery of the output voltage when the output current is swept from maximum to minimum within 100ns. The presented technique is simple and needs a small number of additional components. The additional bias current is only few μA.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"54 1","pages":"373-376"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77360766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and test results of a wideband sige detector and on-chip slot antenna for W-band sensing applications 用于w波段传感应用的宽带信号检测器和片上槽天线的设计和测试结果
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400653
R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg
{"title":"Design and test results of a wideband sige detector and on-chip slot antenna for W-band sensing applications","authors":"R. Malmqvist, C. Samuelsson, D. Dancila, S. Reyaz, M. Kaynak, A. Rydberg","doi":"10.1109/SMICND.2012.6400653","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400653","url":null,"abstract":"This paper presents the circuit designs and results of a wideband power detector and an on-chip slot antenna fabricated in a 0.25 μm SiGe BiCMOS process. The W-band SiGe detector has close to 20 GHz of operational bandwidth (s11≤-10 dB at 75-92 GHz) and a responsivity of 3-5kV/W (NEP = 10-16 pW/Hz1/2) at 83-94 GHz. The SiGe on-chip slot antenna design covers a wide bandwidth (70-110 GHz) with 2 dBi of simulated gain at 94 GHz. The realised wideband SiGe BiCMOS power detector and on-chip antenna are targeting highly integrated single-chip RF front-ends for broadband sensing applications up to 110GHz.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84085845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Time modulation — The exponential way 时间调制-指数方式
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400743
G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu
{"title":"Time modulation — The exponential way","authors":"G. Pristavu, C. Bartholomeusz, V. Anghel, G. Brezeanu","doi":"10.1109/SMICND.2012.6400743","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400743","url":null,"abstract":"A solution for obtaining an exponential variation of time versus input voltage of a time-modulating circuit is investigated, implemented and its performances are measured. Most time-modulating circuits produce a delay that is linearly dependent on the input voltage. This paper proposes a new method of controlling the time delay output by making it vary exponentially with the input voltage. This solution is especially useful in aplications where the time-delay is constantly modulated by a prior error amplifier.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"56 1","pages":"419-422"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84151196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Near-field enhancement of a rod-like nanoantenna: Elctrostatic versus fully retarded results 棒状纳米天线的近场增强:静电与完全延迟的结果
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400744
T. Sandu, V. Buiculescu
{"title":"Near-field enhancement of a rod-like nanoantenna: Elctrostatic versus fully retarded results","authors":"T. Sandu, V. Buiculescu","doi":"10.1109/SMICND.2012.6400744","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400744","url":null,"abstract":"The near-field enhancement of rod-like nanoantenna is studied in two variants: in the electrostatic approximation and in a fully retarded approach. A boundary integral equation (BIE) method has been used in the electrostatic approximation. The BIE method allows a transparent eigenmode decomposition of both the far-field and near-field, which are valid as long as the size of the nanoantenna is much smaller than every representative light wavelength. Our near-field calculations show that for a rod-like nanoantenna with a length below 100 nm the electrostatic and the fully retarded results are in good agreement with each other.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"113 1","pages":"415-418"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79828673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Micro-PIV measurements for hydrodynamic characterizations of microfluidic flows 微流体流体动力学特性的微piv测量
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400641
C. Bălan, C. Marculescu, C. Iliescu
{"title":"Micro-PIV measurements for hydrodynamic characterizations of microfluidic flows","authors":"C. Bălan, C. Marculescu, C. Iliescu","doi":"10.1109/SMICND.2012.6400641","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400641","url":null,"abstract":"The application presented in this paper is based on a non-invasive method for velocity measurement in microchannels. The investigation focuses on the separation phenomena and the manifestations of vortical structures in a Y-bifurcation with a square cross-section. A micro-PIV measurement system is used to obtain velocity profiles distributions in the primary flow domain and in the secondary ones (vortex zones). The experimental data is compared to numerical simulations performed with FLUENT™ code in 3D geometries. Calculated flow patterns are found to be consistent with experiment manifestations, offering useful insights on the vortical structures in the analysed applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"274-250"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77314253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration 应力敏感差分放大器配置的SOI膜压力传感器
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400669
M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu
{"title":"SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration","authors":"M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu","doi":"10.1109/SMICND.2012.6400669","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400669","url":null,"abstract":"This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"6 2 1","pages":"153-156"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78342454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions ZnSe/ZnTe/CdTe薄膜异质结的阻抗谱
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400790
T. Potlog
{"title":"Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions","authors":"T. Potlog","doi":"10.1109/SMICND.2012.6400790","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400790","url":null,"abstract":"The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"28 1","pages":"261-264"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82034581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Micromachined front-end for 60 GHz applications 用于60 GHz应用的微机械前端
CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI: 10.1109/SMICND.2012.6400655
A. Bunea, D. Neculoiu, P. Calmon, A. Takacs
{"title":"Micromachined front-end for 60 GHz applications","authors":"A. Bunea, D. Neculoiu, P. Calmon, A. Takacs","doi":"10.1109/SMICND.2012.6400655","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400655","url":null,"abstract":"In this paper we present the electromagnetic modeling, fabrication and experimental results of a on-chip 2×1 folded slot dipole antenna array manufactured through silicon micromachining, working in the 60 GHz band. The measurements are in very good agreement with the simulations and demonstrate a large working band of ~20% (54-65 GHz) for a return loss better than 10 dB.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"3 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82046599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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