ZnSe/ZnTe/CdTe薄膜异质结的阻抗谱

T. Potlog
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引用次数: 3

摘要

采用阻抗谱法测量了ZnSe/ZnTe/CdTe薄膜异质结构在不同温度下的暗交流电参数。复阻抗的实部和虚部随频率和温度的变化而变化。两者在较低频率下随温度升高而减小,在较高频率处合并。利用Cole-Cole图分析了异质结构的介电弛豫机理。随着温度的升高,Cole-Cole图的半径减小,表明了温度依赖于弛豫的机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions
The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
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