应力敏感差分放大器配置的SOI膜压力传感器

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400669

M. Brezeanu, V. Dumitru, S. Costea, S. Z. Ali, F. Udrea, M. Gologanu, C. Bostan, I. Georgescu, V. Avramescu, O. Buiu

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引用次数: 1

摘要

本文介绍了一种基于绝缘体上硅(SOI)膜的应力敏感差分放大器(SSDA)的压力传感结构。理论计算表明，与传统的惠斯通电桥电路相比，SSDA结构的压力传感器的灵敏度有了显著的提高。对放置在薄膜上的单个晶体管进行的初步实验测量显示出最先进的灵敏度值(1.45mV/mbar)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SOI membrane-based pressure sensor in stress sensitive differential amplifier configuration

This paper introduces a pressure sensing structure configured as a stress sensitive differential amplifier (SSDA), built on a Silicon-on-Insulator (SOI) membrane. Theoretical calculation show the significant increase in sensitivity which is expected from the pressure sensors in SSDA configuration compared to the traditional Wheatstone bridge circuit. Preliminary experimental measurements, performed on individual transistors placed on the membrane, exhibit state-the-art sensitivity values (1.45mV/mbar).

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CAS 2012 (International Semiconductor Conference)

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