{"title":"薄膜晶体管中ZnO: Al有源沟道层的横截面结构和组成的纳米尺度分析","authors":"E. Vasile, S. Mihaiu, R. Plugaru","doi":"10.1109/SMICND.2012.6400770","DOIUrl":null,"url":null,"abstract":"High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"27 1","pages":"329-332"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors\",\"authors\":\"E. Vasile, S. Mihaiu, R. Plugaru\",\"doi\":\"10.1109/SMICND.2012.6400770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"27 1\",\"pages\":\"329-332\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400770\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400770","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors
High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.
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