4H-SiC常关断JFET沟道中的电压势垒模型

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400762

L. Di Benedetto, S. Bellone

{"title":"4H-SiC常关断JFET沟道中的电压势垒模型","authors":"L. Di Benedetto, S. Bellone","doi":"10.1109/SMICND.2012.6400762","DOIUrl":null,"url":null,"abstract":"A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"355-358"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's\",\"authors\":\"L. Di Benedetto, S. Bellone\",\"doi\":\"10.1109/SMICND.2012.6400762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"1 1\",\"pages\":\"355-358\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

给出了正常关断的4H-SiC JFET通道中的势垒模型。它允许在任意几何和偏置条件下评估通道中心的势垒高度和少数载流子密度。通过与各种信道拓扑的数值模拟结果进行比较，验证了该模型的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's

A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.

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来源期刊

CAS 2012 (International Semiconductor Conference)

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