主动开关改进的Dickson电荷泵在BCD过程中实现

CAS 2012 (International Semiconductor Conference) Pub Date : 2012-10-01 DOI:10.1109/SMICND.2012.6400737

A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu

{"title":"主动开关改进的Dickson电荷泵在BCD过程中实现","authors":"A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu","doi":"10.1109/SMICND.2012.6400737","DOIUrl":null,"url":null,"abstract":"The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"138 1","pages":"437-440"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An active switch improved Dickson Charge Pump implemented in a BCD process\",\"authors\":\"A. Joita, V. Matei, O. Profirescu, S. Nedelcu, M. Bodea, M. Profirescu\",\"doi\":\"10.1109/SMICND.2012.6400737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"138 1\",\"pages\":\"437-440\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一种新的改进的集成电荷泵，基于使用增强型和耗尽型MOS晶体管作为有源开关和电荷转移器件，以适应特定于BCD技术的电压等级要求。采用2.5 MHz时钟频率驱动电荷泵电容器，实现了两级设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An active switch improved Dickson Charge Pump implemented in a BCD process

The paper presents a new improved integrated charge pump based on the use of both enhanced and depletion MOS transistors as active switches and charge transfer devices in order to accommodate the voltage class requirements specific to the BCD technology. A two stage design was implemented using 2.5 MHz clock frequency to drive the charge pump capacitors.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

CAS 2012 (International Semiconductor Conference)

自引率

0.00%

发文量