A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
{"title":"一种基于DCG-FGT晶体管的鲁棒跨轨比较器","authors":"A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour","doi":"10.1109/SMICND.2012.6400728","DOIUrl":null,"url":null,"abstract":"A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"276 1","pages":"467-470"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new robust over rail to rail comparator based on DCG-FGT transistor\",\"authors\":\"A. Marzaki, V. Bidal, L. Girardeau, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour\",\"doi\":\"10.1109/SMICND.2012.6400728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.\",\"PeriodicalId\":9628,\"journal\":{\"name\":\"CAS 2012 (International Semiconductor Conference)\",\"volume\":\"276 1\",\"pages\":\"467-470\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CAS 2012 (International Semiconductor Conference)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2012.6400728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new robust over rail to rail comparator based on DCG-FGT transistor
A new comparator based on Dual Control Gate Floating Gate Transistor (DCG-FGT) that allow increasing input voltage range over rail-to-rail is proposed. The comparator operates with a supply voltage ranging from 1.6V to 3.6 V in 90 nm CMOS technology. The comparator is simulated under ELDO and consumes 3.2μA under typical condition.