Advanced Photonics Research最新文献_第3页

Shedding Light on Luminescence Lifetime Measurement and Associated Data Treatment 发光寿命测量及相关数据处理的启示

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-15 DOI: 10.1002/adpr.202400081

Waygen Thor, Jean‐Claude G. Bünzli, Ka‐Leung Wong, P. A. Tanner

引用次数: 0

Unequilibrated Charge Carrier Mobility in Organic Semiconductors Measured Using Injection Metal–Insulator–Semiconductor Charge Extraction by Linearly Increasing Voltage 利用线性增加电压的注入式金属-绝缘体-半导体电荷提取法测量有机半导体中的非平衡电荷载流子迁移率

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-15 DOI: 10.1002/adpr.202300325

Mile Gao, Paul L. Burn, Gytis Juška, Almantas Pivrikas

{"title":"Unequilibrated Charge Carrier Mobility in Organic Semiconductors Measured Using Injection Metal–Insulator–Semiconductor Charge Extraction by Linearly Increasing Voltage","authors":"Mile Gao, Paul L. Burn, Gytis Juška, Almantas Pivrikas","doi":"10.1002/adpr.202300325","DOIUrl":"10.1002/adpr.202300325","url":null,"abstract":"The charge carrier mobility in tris(4-carbazoyl-9-ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light-emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i-MIS-CELIV). By employing the injection current i-MIS-CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS-CELIV is measured. The i-MIS-CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i-MIS-CELIV and MIS-CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time-scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i-MIS-CELIV (photo-i-MIS-CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo-i-MIS-CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron-blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 9","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300325","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141646698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures 直接在硅上生长的低缺陷量子点激光器在高温条件下表现出低阈值电流和高输出功率

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-10 DOI: 10.1002/adpr.202400082

Konstantinos Papatryfonos, Jean‐Christophe Girard, M. Tang, H. Deng, Alwyn Seeds, Christophe David, G. Rodary, Huiyun Liu, D. Selviah

{"title":"Low‐Defect Quantum Dot Lasers Directly Grown on Silicon Exhibiting Low Threshold Current and High Output Power at Elevated Temperatures","authors":"Konstantinos Papatryfonos, Jean‐Christophe Girard, M. Tang, H. Deng, Alwyn Seeds, Christophe David, G. Rodary, Huiyun Liu, D. Selviah","doi":"10.1002/adpr.202400082","DOIUrl":"https://doi.org/10.1002/adpr.202400082","url":null,"abstract":"The direct growth of III‐V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultradense photonic integration in vital communications and computing technologies. However, the III‐V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs‐on‐Si lasers that perform on par with top‐tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimized growth strategies. Atomic‐resolution scanning tunneling microscopy and spectroscopy experiments reveal exceptional material quality in the active region and elucidate the impact of each growth strategy on defect dynamics. The optimized III‐V‐on‐silicon ridge‐waveguide lasers demonstrate a continuous‐wave threshold current as low as 6 mA and high‐temperature operation reaching 165 °C. At 80 °C, critical for data center applications, they maintain a 12 mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high‐density integration of a broad spectrum of critical III‐V photonic technologies into the silicon ecosystem.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 2","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141662121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unique Optoelectronic Properties and Applications of Lead‐Free Perovskites and Derivatives 无铅过氧化物及其衍生物的独特光电特性和应用

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-10 DOI: 10.1002/adpr.202400095

Mingbian Li, Weijun Li, Haotong Wei

引用次数: 0

Multifunctional Intelligent Metamaterial Computing System: Independent Parallel Analog Signal Processing 多功能智能超材料计算系统：独立并行模拟信号处理

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-10 DOI: 10.1002/adpr.202400002

Javad Shabanpour

引用次数: 0

Octave‐Spanning Second‐Harmonic Generation in Dispersion‐Engineered Lithium Niobate‐on‐Insulator Microwaveguide 弥散工程铌酸锂绝缘体微波导管中的倍频程二次谐波生成

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-10 DOI: 10.1002/adpr.202400051

Yongzhi Tang, Tingting Ding, Yuting Zhang, Wenjun Ding, Yiwen Huang, Jiayu Wang, Hao Li, Shijie Liu, Yuanlin Zheng, Xianfeng Chen

{"title":"Octave‐Spanning Second‐Harmonic Generation in Dispersion‐Engineered Lithium Niobate‐on‐Insulator Microwaveguide","authors":"Yongzhi Tang, Tingting Ding, Yuting Zhang, Wenjun Ding, Yiwen Huang, Jiayu Wang, Hao Li, Shijie Liu, Yuanlin Zheng, Xianfeng Chen","doi":"10.1002/adpr.202400051","DOIUrl":"https://doi.org/10.1002/adpr.202400051","url":null,"abstract":"Broadband lasers, e.g., ultrashort lasers, optical supercontinuum, and frequency combs, are revolutionary coherent light sources, which enable a plethora of state‐of‐the‐art applications ranging from precision spectroscopy to optical clocks. However, the spectral broadening of these coherent light sources mainly relies on the third‐order nonlinearity () and is difficult to extend to the visible or shorter wavelength regime. Second‐order nonlinearity (), which is orders of magnitude larger than , becomes a powerful tool for the frequency translation if its broadband operation is well addressed. Herein, an octave‐spanning second‐harmonic generation scheme is experimentally demonstrated beyond an extremely large frequency range of 135 THz and high conversion efficiency of 1% for sub‐100 pJ for the near‐infrared picosecond supercontinuum in a fiber–waveguide–fiber configuration. The process relies on ultrabroadband birefringence phase matching in the dispersion‐engineered lithium niobate‐on‐insulator ridge microwaveguide. The mode area of microwaveguide well matches with single‐mode lens fiber, reducing coupling loss and ensuring easy packaging. The method provides a new approach to span the wavelength range of coherent light with ‐based wavelength translation for supercontinuum or frequency combs into the visible regime. The result would find applications in spectroscopy, astrophysics, atomic optics, optical synthesis, etc.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"69 23","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141662848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces 具有全介电非晶锗金属表面的 Al0.3InAsSb pi-n 光电二极管的宽带量子效率提升

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-10 DOI: 10.1002/adpr.202400090

Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell

{"title":"Broadband Quantum Efficiency Enhancement of Al0.3InAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces","authors":"Dongxia Wei, Bingtian Guo, Adam A. Dadey, J. Andrew McArthur, Junwu Bai, Seth R. Bank, Joe C. Campbell","doi":"10.1002/adpr.202400090","DOIUrl":"10.1002/adpr.202400090","url":null,"abstract":"Transparent amorphous germanium (a-Ge) has emerged as a promising material for engineering nanostructures and metasurfaces, offering significant potential for enhancing the performance of photonic devices in the short-wavelength infrared (SWIR) spectrum. Herein, the successful application of a-Ge metasurfaces with a truncated pyramid profile to enhance the external quantum efficiency (EQE) of a digital alloy Al0.3InAsSb p–i–n photodiode across a broad-wavelength range in the SWIR is presented. The experimental findings demonstrate a broadband enhancement in EQE. Two metasurface samples are designed to emphasize different-wavelength ranges. Notably, 51% improvement in EQE at 1550 nm and 125% enhancement at 2000 nm is achieved. Finite-difference time domain simulations show that the observed EQE improvement originates from the reduction of reflection and electromagnetic field enhancement. This study underscores the promising role of a-Ge metasurfaces in advancing the capabilities of SWIR photodetectors. It lays the groundwork for further exploration in optoelectronic device enhancements.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 9","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400090","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141659593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Active Full-Color Generation Based on a Liquid Crystal-Integrated Plasmonic Metasurface 基于液晶集成等离子体元表面的有源全彩发生器

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-09 DOI: 10.1002/adpr.202300334

Dewang Huo, Guoqiang Li

{"title":"Active Full-Color Generation Based on a Liquid Crystal-Integrated Plasmonic Metasurface","authors":"Dewang Huo, Guoqiang Li","doi":"10.1002/adpr.202300334","DOIUrl":"10.1002/adpr.202300334","url":null,"abstract":"Structural colors based on metasurfaces outperform traditional pigments and dyes in terms of nonfading, high spatial resolution, and high stability, usually incorporating active materials for tunability. Liquid crystals (LCs) are suitable for tunable structural color design due to their large birefringence and fast modulation by external stimuli. However, most LC-integrated structural colors focus on tailoring the polarization angle of incident light to generate two colors and their mixing. Herein, a scheme of full-color generation based on a plasmonic metasurface integrated with LCs utilizing the combination of the polarization angle rotation effect of the twisted-nematic LCs and the refractive index modulation through the realignment of the LCs near the metasurface is demonstrated. Based on the proposed structural color method, full-color generation of a record color gamut of 60.7% standard Red Green Blue region, equivalent to 43% National Television Standards Committee area, in the LC-integrated metasurface, has been numerically realized by tuning the bias voltage of the LCs in reflection. The achieved color gamut is nearly 4 times wider than the previously reported result. The proposed active full-color generation metasurface shows great potential in applications for low-power reflective color display, anticounterfeiting, and optical encoding.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 11","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300334","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers 具有有源区位错阻挡层的硅基 850 nm GaAs/GaAsP 应变量子阱激光器

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-08 DOI: 10.1002/adpr.202470018

Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren

引用次数: 0

A Review: Active Tunable Terahertz Metamaterials 综述：有源可调谐太赫兹超材料

IF 3.7

Advanced Photonics Research Pub Date : 2024-07-08 DOI: 10.1002/adpr.202470020

Jining Li, Jiyue Chen, Dexian Yan, Fei Fan, Kai Chen, Kai Zhong, Yuye Wang, Zhen Tian, Degang Xu

引用次数: 0