Advanced Photonics Research最新文献

136.9 W Acousto-Optically Q-Switched 2 μm Thin-Disk Laser 136.9 W声光调q 2 μm薄板激光器

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-15 DOI: 10.1002/adpr.202500290

Qiongwen Zhang, Pengyuan Wang, Ying Chen, Rui Liu, Fei Teng, Qipeng Lv, Xiang Li, Longhui Dai, Faquan Gong, Songwen Deng, Gang Li, Yuqi Jin

{"title":"136.9 W Acousto-Optically Q-Switched 2 μm Thin-Disk Laser","authors":"Qiongwen Zhang, Pengyuan Wang, Ying Chen, Rui Liu, Fei Teng, Qipeng Lv, Xiang Li, Longhui Dai, Faquan Gong, Songwen Deng, Gang Li, Yuqi Jin","doi":"10.1002/adpr.202500290","DOIUrl":"https://doi.org/10.1002/adpr.202500290","url":null,"abstract":"We demonstrate an acousto-optic (AO) Q-switching Ho:YAG thin disk laser (TDL) at 2 μm with Tm-fiber laser pumping. Under continuous-wave operation, the laser delivered a maximum output power of 216.4 W with an optical-to-optical efficiency of 43.28<math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>%</mi>\u0000 </mrow>\u0000 <annotation>$%$</annotation>\u0000 </semantics></math>, which constitutes the highest power reported for 2 μm TDLs. Under AO Q-switching, we obtained a maximum average output power of 136.9 W at a repetition rate of 20 kHz, while a maximum pulse energy of 30 mJ at 1 kHz highlighted the strong potential of Ho:YAG TDLs for high-energy applications. These results further indicate their potential as efficient pump sources for ZnGeP2 optical parametric oscillators (ZGP-OPOs), enabling effective wavelength extension into the mid- and far-infrared spectral region.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500290","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147686175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Performance All-Optical Modulator Based on Graphene-Loaded Ultrathin Silicon Slot Waveguides 基于石墨烯负载超薄硅槽波导的高性能全光调制器

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-14 DOI: 10.1002/adpr.70201

Zhiang Zhou, Haitao Chen, Siyu Zhou, Hongyuan Cao, Hezhi Ren, Yiheng Wu, Xuan Wang, Haochun Yao, Mengjian Zhu, Daoxin Dai

{"title":"High-Performance All-Optical Modulator Based on Graphene-Loaded Ultrathin Silicon Slot Waveguides","authors":"Zhiang Zhou, Haitao Chen, Siyu Zhou, Hongyuan Cao, Hezhi Ren, Yiheng Wu, Xuan Wang, Haochun Yao, Mengjian Zhu, Daoxin Dai","doi":"10.1002/adpr.70201","DOIUrl":"https://doi.org/10.1002/adpr.70201","url":null,"abstract":"All-optical modulators can operate in an ultrafast way without limitation of the “electric bottleneck,” showing great potential applications in ultrabroadband communication and artificial intelligence. However, it remains as a persistent challenge for realizing ultrafast and energy-efficient all-optical modulation, especially on silicon photonic platform though CMOS-compatible manner. Herein, a novel scheme composed of graphene-loaded ultrathin silicon slot waveguide is demonstrated, realizing efficient and ultrafast all-optical modulation on silicon photonic platform. Owing to the enhanced light–matter interaction and suppression of two-photon absorption, the device shows a measured modulation depth over 3 dB with a potential maximum value of 6.9 dB, a modulation efficiency of 0.086 dB μm−1, and a low saturation threshold energy of 0.88 pJ per pulse with a response time at picosecond scale or less. To the best of our knowledge, the device shows the best comprehensive performance with regard to the modulation efficiency and modulation depth among all silicon-waveguide-integrated all-optical modulators operating at a speed in the picosecond scale or less. Besides, the structure deployed is fabrication friendly and CMOS compatible. The presented work provides a novel strategy for realizing energy-efficient and ultrafast all-optical modulators on silicon photonic platform, paving the way toward on-chip ultrafast and energy-efficient photonic processing.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70201","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147685975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Demonstration of 2.71% External Quantum Efficiency at 630 nm in Singular 2 μm Red InGaN Micro-LEDs on Porous GaN for AR/VR Applications 应用于AR/VR的多孔GaN上的奇异2 μm红色InGaN微型led在630 nm处的外量子效率为2.71%

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-14 DOI: 10.1002/adpr.202500264

Surjava Sanyal, Guangying Wang, Qinchen Lin, Timothy Shih, Akhilesh Ghate, Swarnav Mukhopadhyay, Khush Gohel, Darryl Shima, Ganesh Balakrishnan, Chirag Gupta, Shubhra S. Pasayat

{"title":"Demonstration of 2.71% External Quantum Efficiency at 630 nm in Singular 2 μm Red InGaN Micro-LEDs on Porous GaN for AR/VR Applications","authors":"Surjava Sanyal, Guangying Wang, Qinchen Lin, Timothy Shih, Akhilesh Ghate, Swarnav Mukhopadhyay, Khush Gohel, Darryl Shima, Ganesh Balakrishnan, Chirag Gupta, Shubhra S. Pasayat","doi":"10.1002/adpr.202500264","DOIUrl":"https://doi.org/10.1002/adpr.202500264","url":null,"abstract":"Next-generation augmented/virtual reality (AR/VR) headsets require ultrasmall (<5 μm) micro-LEDs. The III-Nitride material system is used for highly efficient blue and green devices. Due to the low efficiency of red InGaN LEDs, AlInGaP is used for red emission. However, AlInGaP-based red micro-LEDs suffer from intense size-dependent efficiency reduction. Using topology-free porous pseudo-substrates, we fabricated ultra-small red InGaN micro-LEDs with a lateral dimension of 2 μm, achieving a peak external quantum efficiency (EQE) of 2.71% at 630 nm under 2.5 A/cm2 in an integrating sphere. To the best of our knowledge, this is the highest reported peak EQE for singular (nonarrayed) InGaN micro-LEDs with a lateral dimension less than 5 μm and a peak wavelength greater than 620 nm. Based on finite-difference time-domain simulations, with silicone encapsulation (n = 1.54), the EQE could potentially increase to 4.4%. The peak EQE occurs at a low current density of 2.5 A/cm2 and, along with the small device size (2 μm), makes it attractive for AR/VR applications, which require low power consumption and high pixel density.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500264","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147685976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DF-FPM: Low Complexity Fourier Ptychographic Microscopy via Selective Dark Field Updating DF-FPM：通过选择性暗场更新的低复杂度傅立叶平面显微镜

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-11 DOI: 10.1002/adpr.202500289

Qingxin Wang, Yanqi Chen, Aiye Wang, An Pan, Yishi Shi

引用次数: 0

Systematic Performance Analysis of a Propagation-Type Metalens Under Practical Fabrication Imperfections 实际加工缺陷下扩展型超构透镜的系统性能分析

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-11 DOI: 10.1002/adpr.202500305

Zhendong Luo, Zhangzhen Mai, Jialuo Cheng, Yin Zhou, Yang Zhao, Mu Ku Chen

{"title":"Systematic Performance Analysis of a Propagation-Type Metalens Under Practical Fabrication Imperfections","authors":"Zhendong Luo, Zhangzhen Mai, Jialuo Cheng, Yin Zhou, Yang Zhao, Mu Ku Chen","doi":"10.1002/adpr.202500305","DOIUrl":"10.1002/adpr.202500305","url":null,"abstract":"Metalenses based on dielectric metasurfaces have emerged as a powerful platform for realizing compact and multifunctional optical systems. However, the optical performance of practical devices is influenced by fabrication imperfections inherent to nanomanufacturing processes, which cause deviations from ideal design parameters. In this work, we establish a quantitative framework that connects fabrication-induced geometric errors to system-level focusing performance through a statistical phase-error model. Using TiO2 nanopillars on an indium tin oxide substrate as a representative unit cell, three dominant fabrication imperfections—uniform size deviation, sidewall inclination, and corner rounding—are analyzed via full-wave simulations at 532 nm. Phase deviations were modeled by Gaussian functions to describe their statistical behavior. Random phase disturbances generated from the combined distribution were applied to the metalens. Simulations indicate that typical fabrication errors cause only minor efficiency loss, while the focal position and spot shape remain almost unchanged. Furthermore, this study provides a generalizable statistical approach for predicting and optimizing metasurface performance under realistic manufacturing conditions.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500305","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147668515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Field Programmable Gate Array-Based Control Systems for Highly Stable Laser Applications 高稳定激光应用的现场可编程门阵列控制系统

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-11 DOI: 10.1002/adpr.202500222

Prosenjit Majumder, Rakesh Tirupathi

{"title":"Field Programmable Gate Array-Based Control Systems for Highly Stable Laser Applications","authors":"Prosenjit Majumder, Rakesh Tirupathi","doi":"10.1002/adpr.202500222","DOIUrl":"10.1002/adpr.202500222","url":null,"abstract":"This review presents a comprehensive overview of field-programmable gate array (FPGA)-based laser frequency stabilization systems employing modulation-based spectroscopy techniques. The transition from traditional analog servo controllers to digital and hybrid FPGA-based architectures is discussed, highlighting the advantages of FPGAs in terms of low latency, high bandwidth, flexibility, and long-term stability. Particular emphasis is placed on modulation transfer spectroscopy, which has emerged as one of the most widely used and robust approaches for high-precision laser frequency locking due to its background-free error signals and reduced sensitivity to residual amplitude modulation. Representative system architectures, control strategies, and performance metrics reported in the literature are critically compared, with applications in atomic physics, quantum technologies, and high-resolution spectroscopy. Finally, emerging directions such as adaptive digital control and machine-learning-assisted optimization are discussed as future perspectives for FPGA-based laser stabilization systems.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500222","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147668570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First Flexible All-Perovskite Tandem Minimodule Using Au-Free Recombination Junction 首个使用无金复合结的柔性全钙钛矿串联微型模块

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-02 DOI: 10.1002/adpr.202500286

Amina Labiod, Polyxeni Tsoulka, Cyril Leon, Jules Allegre, Solenn Berson

{"title":"First Flexible All-Perovskite Tandem Minimodule Using Au-Free Recombination Junction","authors":"Amina Labiod, Polyxeni Tsoulka, Cyril Leon, Jules Allegre, Solenn Berson","doi":"10.1002/adpr.202500286","DOIUrl":"10.1002/adpr.202500286","url":null,"abstract":"All-perovskite tandem devices are widely studied, as they ensure to overcome the limitations of single-junction devices. However, scaling up the technology into modules on the flexible substrates is a key challenge for commercialization. In this work, strategies are combined to fabricate monolithic 2-terminal all-perovskite tandem (M2TAPT) minimodules on flexible substrates. A methylammonium (MA, CH3NH3+)-free perovskite formulation leading to a bandgap (Eg) of 1.73 eV is selected and successfully deposited on the flexible substrate. In order to avoid shunts at the interconnections in modules, a thin indium tin oxide recombination layer with high lateral resistivity is developed by DC sputtering. The solvent-barrier property is assisted by a uniform and dense tin oxide (SnO2) buffer layer grown by atomic layer deposition. Regarding the interconnections of the cells, an appropriate laser scribing process is established in order to achieve a selective and clean removal without affecting the tandem stack. Finally, M2TAPT minimodules are successfully developed on flexible substrates with a geometrical fill factor of 93.8%. A power conversion efficiency of 15.9% is achieved on an active area of 11 cm2 with a steady-state efficiency of 15.2% measured after one week of dark storage in the glovebox.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500286","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147668096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Branch Deep Neural Network for FLIM Parameter Estimation 用于FLIM参数估计的双分支深度神经网络

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-01 DOI: 10.1002/adpr.202500300

Mou Adhikari, Kathrin Groeneveld, Matthias Klemm, Ralf Mrowka, Jens Haueisen, Shuxia Guo, Thomas Bocklitz

{"title":"Dual-Branch Deep Neural Network for FLIM Parameter Estimation","authors":"Mou Adhikari, Kathrin Groeneveld, Matthias Klemm, Ralf Mrowka, Jens Haueisen, Shuxia Guo, Thomas Bocklitz","doi":"10.1002/adpr.202500300","DOIUrl":"10.1002/adpr.202500300","url":null,"abstract":"Fluorescence lifetime imaging microscopy (FLIM) is a powerful tool for studying molecular interactions and cellular microenvironments. Conventional lifetime estimation relies on curve fitting, a computationally intensive and noise-sensitive process. To address these challenges, we developed a dual-branch deep learning-based framework for fit-free estimation of FLIM parameters. It integrates multitasking and knowledge-informed learning to improve accuracy and robustness. The dual-branch model consists of an autoencoder (AE) and a convolutional neural network. The AE processes decay traces to generate a reconstruction and a latent representation, which is subsequently fed into the CNN to predict fluorescence lifetimes and abundances. To overcome the limitation of scarce experimental data, we constructed a training dataset by combining simulated and experimental traces. The method was first validated with a leave-one-IRF-out cross-validation on simulated data to confirm its capacity to generalize across instrument response functions (IRFs). Next, we evaluated the method on experimental data, with the training data from different proportions of simulated and experimental decays. Compared to baseline CNN and the FLIMview software (curve-fitting based), the proposed model demonstrated superior performance even with limited experimental data. These findings underscore the potential of deep learning to enable scalable, real-time FLIM analysis.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500300","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Intense Pulsed Light Annealing of Tin(IV) Oxide Electron-Transport Layer for Large-Scale Fabrication of Flexible Printed Perovskite Solar Cells 大规模制备柔性印刷钙钛矿太阳能电池中氧化锡电子输运层的强脉冲光退火

IF 3.9

Advanced Photonics Research Pub Date : 2026-04-01 DOI: 10.1002/adpr.202500283

Adilet T. Muratov, Mussakhan A. Aryslan, Yerassyl Yerlanuly, Almaz R. Beisenbayev, Erik O. Shalenov, Ayazhan Kubasheva, Tri T. Pham, Annie Ng, Askhat N. Jumabekov

{"title":"Intense Pulsed Light Annealing of Tin(IV) Oxide Electron-Transport Layer for Large-Scale Fabrication of Flexible Printed Perovskite Solar Cells","authors":"Adilet T. Muratov, Mussakhan A. Aryslan, Yerassyl Yerlanuly, Almaz R. Beisenbayev, Erik O. Shalenov, Ayazhan Kubasheva, Tri T. Pham, Annie Ng, Askhat N. Jumabekov","doi":"10.1002/adpr.202500283","DOIUrl":"10.1002/adpr.202500283","url":null,"abstract":"Intense pulsed light (IPL) annealing is a rapid heat treatment technique that significantly reduces the fabrication time of flexible printed perovskite solar cells (FPPSCs) and is compatible with roll-to-roll (R2R) systems. This work presents the results of the optimization of IPL annealing for the tin(IV) oxide (SnO2) electron-transport layer (ETL) and systematically compares IPL-annealed samples with their hot plate-annealed counterparts, designated as REF-SnO2. Thin-film characterization reveals that the optimal condition, referred to as IPL-SnO2, involves a two-step annealing process: hot plate drying at 100°C for 5 min followed by a single flash with a pulse voltage of 2400 V and a pulse duration of 1000 μs. Notably, IPL-SnO2 and REF-SnO2 films exhibit nearly identical electrical, optical, and morphological properties. Moreover, devices fabricated with IPL-SnO2 and REF-SnO2 ETLs demonstrate comparable photovoltaic performance, reaching average power conversion efficiencies (PCEs) of 8.92% and 8.94%, respectively. Photostability tests show that IPL-SnO2 devices are operational after 4500 min of continuous illumination. To distinguish the immediate effect of IPL annealing from that of preannealing, characterizations are conducted in parallel on nonannealed and preannealed samples, termed WA-SnO2 and PRE-SnO2, respectively. These findings confirm that IPL annealing is a promising approach for scaling up FPPSCs.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 4","pages":""},"PeriodicalIF":3.9,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500283","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147667933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Generation of Anisotropic Second-Harmonic Petal-Like Beams with NbOBr2 Holograms 利用NbOBr2全息图产生各向异性二次谐波花瓣状光束

IF 3.9

Advanced Photonics Research Pub Date : 2026-03-30 DOI: 10.1002/adpr.202500319

Jayanta Deka, Jie Gao, Xiaodong Yang

引用次数: 0