Advanced Photonics Research最新文献

Compact System for Eye Tracking With Virtual Reality/Augmented Reality Displays via Deep Learned MicroLED Projection and Single-Pixel Sensing 基于深度学习微led投影和单像素传感的虚拟现实/增强现实显示器眼动追踪紧凑系统

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Advanced Photonics Research Pub Date : 2026-10-16 DOI: 10.1002/adpr.70286

Graeme E. Johnstone, Catherine F. Higham, Aisha Kanwal, Johannes Herrnsdorf, Robert K. Henderson, Martin D. Dawson, Roderick Murray-Smith, Michael J. Strain

引用次数: 0

Mind the Bump: Thermal Quenching Correction of Thermoluminescence Glow Curves and Application to SrAl2O4:Eu2+, Dy3+ 注意碰撞：热致发光曲线的热猝灭校正及其在SrAl2O4:Eu2+， Dy3+上的应用

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Advanced Photonics Research Pub Date : 2026-10-16 DOI: 10.1002/adpr.70294

Hei-Yui Kai, Ka-Leung Wong, Peter A. Tanner

{"title":"Mind the Bump: Thermal Quenching Correction of Thermoluminescence Glow Curves and Application to SrAl2O4:Eu2+, Dy3+","authors":"Hei-Yui Kai, Ka-Leung Wong, Peter A. Tanner","doi":"10.1002/adpr.70294","DOIUrl":"https://doi.org/10.1002/adpr.70294","url":null,"abstract":"In order to extract accurate information from a thermoluminescence glow curve it is necessary to correct it for thermal quenching. Assuming that the dominant quenching process is due to nonradiative deactivation, the correction can be made by the Mott–Seitz equation. However, the experimentally determined quenching curve from the temperature dependence of luminescence intensity or integrated band area often suffers from a pronounced “bump” which we associate with thermoluminescence. It is shown that good data fits can be achieved by employing the higher temperature region above thermoluminescence. For demonstration, the commercial persistent luminescence phosphor SrAl2O4:Eu2+, Dy3+ has been chosen. The thermal quenching parameter WTQ was found to be 5016 ± 121 cm−1 and the quenching mechanism was deduced to be ionization to the conduction band. The corrected glow curves have been analyzed by the Kitis and initial rise methods and indicate a continuous distribution of traps at ~4000–5000 cm−1 below the conduction band. These are normally taken to be oxygen vacancies together with the cooperation of dysprosium ions.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70294","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149205958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reaching Sub-pm/K Temperature Insensitivity in Piezoelectrically Actuated Athermal Tantalum Pentoxide Platform 压电驱动五氧化二钽非热敏平台的亚pm/K温度不敏感性研究

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Advanced Photonics Research Pub Date : 2026-10-15 DOI: 10.1002/adpr.70295

Mingjian You, Zhenyu Liu, Xinyu Guan, Jiaxin Hou, Ziming Zhang, Junke Zhou, Weiren Cheng, Ning Ding, Zhengqi Li, Qiwei Zheng, Shengjie Liu, Dejan M. Gvozdić, Xiaoguang Liu, Qiancheng Zhao

{"title":"Reaching Sub-pm/K Temperature Insensitivity in Piezoelectrically Actuated Athermal Tantalum Pentoxide Platform","authors":"Mingjian You, Zhenyu Liu, Xinyu Guan, Jiaxin Hou, Ziming Zhang, Junke Zhou, Weiren Cheng, Ning Ding, Zhengqi Li, Qiwei Zheng, Shengjie Liu, Dejan M. Gvozdić, Xiaoguang Liu, Qiancheng Zhao","doi":"10.1002/adpr.70295","DOIUrl":"https://doi.org/10.1002/adpr.70295","url":null,"abstract":"Realizing electrical tunability in passive athermal photonic devices has long been a challenge for photonic platforms that inherently lack electro-optic tuning capability. Here, we demonstrate a tunable athermal Mach–Zehnder interferometer (AMZI) fabricated in the tantalum pentoxide (Ta2O5) platform and actuated by a lead zirconate titanate (PZT) chip. Athermalization is achieved through the structural compensation method and postfabrication trimming by a PZT actuator, yielding an intrinsic temperature-dependent wavelength shift (TDWS) of 6.2 pm/K and a record-low TDWS of 0.49 pm/K near 1550 nm with piezoelectric trimming. The PZT-bonded AMZI exhibits a piezoelectric tuning efficiency of −58.5 pm/V and a 3 dB bandwidth of 2.6 kHz. Leveraging this tunability, the residual TDWS of the AMZI could be suppressed to sub-pm/K level. The electrical tunability also renders long-term thermal stability possible, as demonstrated in a proportional–integral–differential (PID)-controlled output stabilization system. Under significant thermal perturbations, the output voltage experienced only minor deviations (<±0.1 V) and rapidly recovered to the setpoint once the temperature stabilized, underscoring the device’s improved resilience to environmental temperature fluctuations. The demonstrated piezoelectrically tunable athermal photonic device holds great promise for integrated photonic systems that require both high thermorefractive stability and reconfigurability.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70295","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149205572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polarization-Independent Thermoplasmonic Optical Filtering Using Cholesteric Liquid Crystals and Gold Nanorod Arrays 利用胆甾液晶和金纳米棒阵列的偏振无关热等离子体光滤波

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Advanced Photonics Research Pub Date : 2026-10-14 DOI: 10.1002/adpr.70293

Federica Zaccagnini, Francesca Petronella, Nelson Tabiryan, Michael E. McConney, Jonathan Slagle, Kwang-Un Jeong, Timothy J. Bunning, Luciano De Sio

引用次数: 0

Omnidirectional and Directional Thermal Emission From Distinct Gradient-Doped InAs Multilayer Designs 不同梯度掺杂InAs多层设计的全向和定向热发射

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Advanced Photonics Research Pub Date : 2026-10-11 DOI: 10.1002/adpr.70292

Ke Ma, Gokul Nanda Gopakumar, Zhixiang Huang, Sai Rahul Sitaram, Stephanie Law, Xi Wang

{"title":"Omnidirectional and Directional Thermal Emission From Distinct Gradient-Doped InAs Multilayer Designs","authors":"Ke Ma, Gokul Nanda Gopakumar, Zhixiang Huang, Sai Rahul Sitaram, Stephanie Law, Xi Wang","doi":"10.1002/adpr.70292","DOIUrl":"https://doi.org/10.1002/adpr.70292","url":null,"abstract":"Controlling thermal emission with tailored spectral and angular characteristics is essential for applications including thermophotovoltaics, radiative cooling, infrared sensing, and thermal camouflage. Existing demonstrations typically achieve either omnidirectional absorption or directional emission, often relying on patterned nanostructures that limit scalability. Here, we demonstrate two distinct classes of lithography-free, wafer-scale gradient-doped indium arsenide multilayers within a common material platform. Polarization-matched gradient-Epsilon-Near-Zero (ENZ) designs produce polarization-independent omnidirectional thermal emission near 9 and 11 μm, whereas angle-matched gradient-ENZ designs produce broadband transverse magnetic-polarized directional emission over the 7–10 and 10–15 μm ranges. These results demonstrate a scalable semiconductor multilayer framework in which carrier-density and layer-thickness engineering provide distinct routes to spectral, angular, and polarization-dependent thermal-emission control.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70292","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149205439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-Dependent Conduction and Gate-Tunable Photoresponse in Graphene Photodetectors 石墨烯光电探测器的温度依赖传导和门可调谐光响应

IF 4

Advanced Photonics Research Pub Date : 2026-10-09 DOI: 10.1002/adpr.70291

Daniel C. Nickel, Daniele Capista, Rasuole Lukose, Aniello Pelella, Adolfo Mazzotti, Sebastiano De Stefano, Filippo Giubileo, Christian Wenger, Antonio Di Bartolomeo, Mindaugas Lukosius

{"title":"Temperature-Dependent Conduction and Gate-Tunable Photoresponse in Graphene Photodetectors","authors":"Daniel C. Nickel, Daniele Capista, Rasuole Lukose, Aniello Pelella, Adolfo Mazzotti, Sebastiano De Stefano, Filippo Giubileo, Christian Wenger, Antonio Di Bartolomeo, Mindaugas Lukosius","doi":"10.1002/adpr.70291","DOIUrl":"https://doi.org/10.1002/adpr.70291","url":null,"abstract":"Graphene photodetectors are promising candidates for broadband and high-speed optoelectronics, yet tunable photoconductive behavior without junction engineering remains elusive. Here, we report gate-controlled switching between positive and negative photoconductance in graphene field-effect transistors (GFETs) fabricated on Si/SiO2 with Si3N4 passivation using a CMOS-compatible process. Temperature-dependent transport measurements (77–327 K) reveal impurity-limited mobility at low temperatures and phonon-dominated scattering at elevated temperatures, alongside pronounced hysteresis attributed to interfacial charge trapping and adsorbates. Under illumination, the devices exhibit a sublinear photocurrent dependence on incident power and saturation at higher intensities, consistent with a charge trap-mediated photogating effect. Remarkably, the application of a back-gate voltage induces a reversible transition from positive to negative photoconductance in the absence of heterojunctions. This behavior is attributed to the interplay of photogenerated carrier trapping at the graphene/SiO2 interface, adsorbate-mediated charge transfer, and gate-induced Fermi level modulation, which collectively govern carrier density and scattering. These results establish a simple platform for electrically tunable photoconductance in graphene and provide new insights into interfacial effects governing photogating, enabling low-power and multifunctional optoelectronic devices.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149146334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrabroadband, Subvolt Thin-Film Lithium Niobate Modulators via Codesigned Optical and RF Slow-Wave Structures 基于协同设计的光学和射频慢波结构的超宽带亚伏特铌酸锂薄膜调制器

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Advanced Photonics Research Pub Date : 2026-10-09 DOI: 10.1002/adpr.70284

Zobeyde Dadkhah, Reza Safian, Zaker Hossein Firouzeh

{"title":"Ultrabroadband, Subvolt Thin-Film Lithium Niobate Modulators via Codesigned Optical and RF Slow-Wave Structures","authors":"Zobeyde Dadkhah, Reza Safian, Zaker Hossein Firouzeh","doi":"10.1002/adpr.70284","DOIUrl":"https://doi.org/10.1002/adpr.70284","url":null,"abstract":"Low-voltage, high-bandwidth electro-optic modulators are essential for next-generation optical interconnects and CMOS-compatible photonic systems. Here, we demonstrate thin-film lithium niobate (TFLN) Mach–Zehnder modulators that combine slow-light optical waveguides with inductively loaded slow-wave RF electrodes to simultaneously reduce the half-wave voltage (Vπ) and extend the modulation bandwidth. The optical section employs a dispersion-engineered 1D photonic crystal waveguide with an enhanced group index, achieving an ultralow voltage–length product of ≈0.3 V cm across all designs. To maintain broadband operation, the RF transmission lines are engineered to increase the RF effective index and achieve close RF-optical index matching. Using two distinct electrode configurations, the resulting modulators achieve 3-dB electro-optic bandwidths of 75–203 GHz, Vπ values of 0.25–1.0 V, and interaction lengths of 2.7–12.8 mm. These findings demonstrate that codesigned optical and RF slow-wave structures offer an effective strategy for realizing compact, low-drive-voltage, and ultrabroadband integrated modulators.","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"7 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70284","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149146311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design Principles of High-Radiance and Stable Perovskite Light-Emitting Diodes 高亮度稳定钙钛矿发光二极管的设计原理

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Advanced Photonics Research Pub Date : 2026-10-09 DOI: 10.1002/adpr.70288

Kanak Kanti Bhowmik, Theo Luan, Lianfeng Zhao

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Band-Pass to Band-Stop Switchable Color Filters Based on Birefringent Dielectric Metasurfaces 基于双折射介质超表面的带通带阻可切换滤色器

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Advanced Photonics Research Pub Date : 2026-10-07 DOI: 10.1002/adpr.70287

Ondřej Červinka, Filip Ligmajer, Ondřej Brunn, Miroslav Horáček, Stanislav Krátký, Tomáš Šikola

引用次数: 0

Enhancing the Eyebox Brightness and Size in Augmented Reality Waveguide Devices via Polarization Multiplexing 偏振复用增强现实波导器件的眼箱亮度和尺寸