2019 IEEE 69th Electronic Components and Technology Conference (ECTC)最新文献

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Novel Multicore PCB and Substrate Solutions for Ultra Broadband Dual Polarized Antennas for 5G Millimeter Wave Covering 28GHz & 39GHz Range 用于覆盖28GHz和39GHz范围的5G毫米波超宽带双极化天线的新型多核PCB和基板解决方案
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00149
T. Thai, S. Dalmia, Josef Hagn, Pouya Talebbeydokhti, Yossi Tsfati
{"title":"Novel Multicore PCB and Substrate Solutions for Ultra Broadband Dual Polarized Antennas for 5G Millimeter Wave Covering 28GHz & 39GHz Range","authors":"T. Thai, S. Dalmia, Josef Hagn, Pouya Talebbeydokhti, Yossi Tsfati","doi":"10.1109/ECTC.2019.00149","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00149","url":null,"abstract":"5G millimeter wave (mmWave) communications that enables Gbps data channels often require broadband operation with dual polarization in multi frequency ranges (27-30, and 37-40GHz). Additionally, access points and base stations need large high gain antenna arrays and consistent radiation patterns across operation frequencies for ease of beam scanning control. Many stacked patch antennas were proposed as the solution. However, broadband patch antennas require thick substrate and multiple layers. For high volume production in standard substrate technology with acceptable yield, such solution targeting the consumer market has not been attempted previously. In this work, we present a novel multicore packaging approach to realize a unique and cost effective solution based on standard PCB/ Substrate technology. We demonstrate this with a complete mmWave RF module board with dimensions of 30mm x 50mm x 1.5mm. It consists of a large area dual polarization dual frequency (28GHz and 39GHz) stacked patch antenna array of 4x8 elements and fully integrated Systems-In-Package (SIPs) along with all the thermal and mechanical functions. This solution achieves a very high cross polarization discrimination ratio (>25dB), which is critical in the MIMO operation of the dual polarization network. The work includes measurements to validate the design and the packaging concept suitable for low cost mmWave 5G CPE (Customer Premises Equipment) and base station applications.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"45 1","pages":"954-959"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84767785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Assessing the Reliability of Highly Stretchable Interconnects for Flexible Hybrid Electronics 柔性混合电子器件高可拉伸互连可靠性评估
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00122
R. Sivasubramony, A. Zachariah, M. Alhendi, M. Yadav, P. Borgesen, M. Poliks, N. Stoffel, D. Shaddock, L. Yin
{"title":"Assessing the Reliability of Highly Stretchable Interconnects for Flexible Hybrid Electronics","authors":"R. Sivasubramony, A. Zachariah, M. Alhendi, M. Yadav, P. Borgesen, M. Poliks, N. Stoffel, D. Shaddock, L. Yin","doi":"10.1109/ECTC.2019.00122","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00122","url":null,"abstract":"Highly stretchable, bio-compatible interconnects are of particular interest for medical and military applications as Wearable Performance Monitors (WPMs) and sensors. Screen printed trace interconnects on highly compliant Thermoplastic Polyurethanes (TPU) provides a low cost, viable option. But these stretchability has high ramification on the reliability aspects of WPM construction. In this paper, we perform the reliability testing of two screen printed inks under repeated mechanical loads 'as-printed' and after exposure to temperature and humidity.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"42 1","pages":"768-776"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90612286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
PowerTherm Attach Process for Power Delivery and Heat Extraction in the Silicon-Interconnect Fabric Using Thermocompression Bonding 利用热压键合在硅互连织物中进行电力输送和热提取的PowerTherm附加工艺
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00247
Pranav Ambhore, U. Mogera, Boris Vaisband, Ujash Shah, T. Fisher, M. Goorsky, S. Iyer
{"title":"PowerTherm Attach Process for Power Delivery and Heat Extraction in the Silicon-Interconnect Fabric Using Thermocompression Bonding","authors":"Pranav Ambhore, U. Mogera, Boris Vaisband, Ujash Shah, T. Fisher, M. Goorsky, S. Iyer","doi":"10.1109/ECTC.2019.00247","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00247","url":null,"abstract":"High-density placement of dies on the Silicon Interconnect Fabric (Si-IF) demands high power delivery (1 W/mm2) which in turn generates intense heat (~0.5-0.7 W/mm2). To meet this power requirement and manage its thermal dissipation, we have introduced a novel architecture called PowerTherm which involves the attachment of electrically isolated copper terminal blocks to the back side of the Si-IF. The terminal blocks perform a dual function: they deliver high current at mission voltage and cool the Si-IF either passively or actively. This paper deals with PowerTherm bonding process and its characterization. The terminal blocks were attached to electrodeposited Cu on Si using thermocompression bonding in atmospheric conditions, however with confined air flow. Shear strength of ~ 17 MPa was achieved when the bonding was performed at the optimized conditions.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"30 1","pages":"1605-1610"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78146332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Signal Integrity of Submicron InFO Heterogeneous Integration for High Performance Computing Applications 高性能计算应用中亚微米信息异构集成的信号完整性
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00109
Chuei-Tang Wang, J. Hsieh, V. Chang, Shih-Ya Huang, T. Ko, H. Pu, Douglas C. H. Yu
{"title":"Signal Integrity of Submicron InFO Heterogeneous Integration for High Performance Computing Applications","authors":"Chuei-Tang Wang, J. Hsieh, V. Chang, Shih-Ya Huang, T. Ko, H. Pu, Douglas C. H. Yu","doi":"10.1109/ECTC.2019.00109","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00109","url":null,"abstract":"Heterogeneous integration has attracted much attention for high performance computing (HPC) since artificial intelligence (AI) accelerators surged. The technologies for heterogeneous integration, such as silicon interposer (2.5D), fan-out wafer-level-packaging (FOWLP), and organic substrate, have been proposed to integrate logic-logic or logic-HBM chips in the AI system for performance and cost benefits. However, the tremendous data flow in 5G era requires higher data rate and bandwidth for the extensive die-to-die communication. Therefore, a BEOL-scale re-distributed layer (RDL) technology should be developed to satisfy the requirements. In this paper, a novel ultra-high-density InFO (InFO_UHD) technology with submicron RDL is developed to provide high interconnect density and bandwidth for logic-logic system. The bandwidth density can achieve record high 10 Tbps/mm at line width and spacing (L/S) of 0.8/0.8 um and length of 500 um, for a logic-logic system using simplified IO driver. Using the technology in logic-memory system, we found that the scaling of RDL thickness, L/S, and dielectric thickness can mitigate ring-back problems in the eye diagram of organic substrate. Given HBM2 specification, the bandwidth density can achieve more than 0.4 Tbps/mm from dramatically improved signal integrity. Finally, power efficiency, in the metric of energy per bit, of the interconnect technology under simplified IO driver and HBM2 driver condition was calculated and compared with other technology, respectively.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"103 1","pages":"688-694"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72892954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Product Level Design Optimization for 2.5D Package Pad Cratering Reliability During Drop Impact 2.5D封装衬垫跌落冲击可靠性的产品级设计优化
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00323
Huayan Wang, Jing Wang, Jiefeng Xu, Van-Lai Pham, K. Pan, Seungbae Park, Hohyun Lee, G. Refai-Ahmed
{"title":"Product Level Design Optimization for 2.5D Package Pad Cratering Reliability During Drop Impact","authors":"Huayan Wang, Jing Wang, Jiefeng Xu, Van-Lai Pham, K. Pan, Seungbae Park, Hohyun Lee, G. Refai-Ahmed","doi":"10.1109/ECTC.2019.00323","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00323","url":null,"abstract":"The conversion from using tin-lead solder joint to lead-free solder joint has raised many pad cratering failures for electronics manufacturing. This phenomenon has become more severe to the 2.5D package which has a large heatsink attached on the top. The pad cratering issue has been found during testing, handling or transport due to a single overload. The package qualification process requires that it passes the board level drop test before shipping, however, this doesn't always guarantee that the package will survive from product level drop, especially for a complicated design product. Many types of research have been conducted to improve the package's board-level pad cratering reliability, few emphases were put on the product design. The aim of the present study is to evaluate several product design parameters with respect to PCB stress, using numerical methods. Several different design variables, such as reinforcement structure, heatsink size, pad design, were studied. Data are presented to show the effects of the above factors and to highlight the main factor to cause the pad cratering failure.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"37 1","pages":"2343-2348"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82537957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Polylithic Integration of 2.5D and 3D Chiplets Using Interconnect Stitching 基于互连拼接的2.5D和3D小片的多片集成
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00278
Paul K. Jo, Ting Zheng, M. Bakir
{"title":"Polylithic Integration of 2.5D and 3D Chiplets Using Interconnect Stitching","authors":"Paul K. Jo, Ting Zheng, M. Bakir","doi":"10.1109/ECTC.2019.00278","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00278","url":null,"abstract":"This paper explores polylithic integration of heterogeneous dice (chiplets) for high-density electronic systems. In this approach, stitch-chips are used to enable 2.5D integration by providing dense signal pathways between assembled 'anchor chips,' while surface-embedded chips provide 3D face-to-face electrical interconnection with corresponding anchor chips. Multi-height Compressible MicroInterconnects (CMIs) are used to enable low-loss and mechanically robust interfaces between the anchor chips and the stitch-chips as well as the surface-embedded chips. Fabrication and assembly of a testbed is reported and demonstrates robust interconnection. In an effort to characterize the CMIs and stitch-chip channels at high-frequency, electromagnetic simulations are carried out and demonstrate less than 0.6 dB insertion loss for 90 µm tall CMIs and 500 µm long channels on a fused silica stitch-chip.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"21 2 1","pages":"1803-1808"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82912148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multilayer Glass Substrate with High Density Via Structure for All Inorganic Multi-chip Module 全无机多芯片模组的高密度通孔结构多层玻璃基板
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00301
Toshiki Iwai, T. Sakai, D. Mizutani, S. Sakuyama, Kenji Iida, T. Inaba, H. Fujisaki, A. Tamura, Yoshinori Miyazawa
{"title":"Multilayer Glass Substrate with High Density Via Structure for All Inorganic Multi-chip Module","authors":"Toshiki Iwai, T. Sakai, D. Mizutani, S. Sakuyama, Kenji Iida, T. Inaba, H. Fujisaki, A. Tamura, Yoshinori Miyazawa","doi":"10.1109/ECTC.2019.00301","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00301","url":null,"abstract":"Silicon interposer (Si-IP) technology has been used in accelerated processing units such as graphic processing units in high-performance computing because it can package a system-on-chip and high bandwidth memories. However, the conventional Si-IP has difficulty developing larger packages because of the mismatch in the coefficient thermal expansions (CTE) of the Si-IP and the organic substrate. Therefore, the Si-IP has limited capacity for improving computing performance by the application which requires more chips. We developed a multilayer glass substrate (Glass-ST) that features a stacked glass core and propose to apply this Glass-ST to a computer board. The proposed structure has no CTE mismatch and can use high density wiring. Thus, the Glass-ST enables the assembly of more large chips than is possible using the conventional Si-IP. In this study, we prepared a 100X100 mm Glass-ST with a 5/5 µm line/space and 20 µmΦ vias. We mounted nine 21X21 mm chips with 40 µm pitch micro bumps. The results revealed that conformal plated through glass vias and a fine wiring pattern had been fabricated in the Glass-ST, and that the nine chips and Glass-ST were connected by micro bumps. The maximum warpage of the nine chips was 23 µm between temperatures of 30°C and 250°C. This means that the Glass-ST can mount chips with micro bumps due to the very slight resulting warpage. In addition, we performed thermomechanical simulation to investigate the stress experienced by the micro bumps. The results show that the maximum stresses of micro bumps with pitches ranging between 10 µm and 55 um are very similar to that of 40 µm pitch micro bumps with which the real sample was packaged. We believe the improvements in the computing performance are significant by the Glass-ST technology compared to that of the conventional Si-IP technology.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"26 1","pages":"1952-1957"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73914954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Low Temperature and Pressureless Microfluidic Electroless Bonding Process for Vertical Interconnections 垂直互连的低温无压微流体化学键合工艺
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00265
H. Hung, Sean Yang, I. Weng, Yan-Hao Chen, C. Kao
{"title":"Low Temperature and Pressureless Microfluidic Electroless Bonding Process for Vertical Interconnections","authors":"H. Hung, Sean Yang, I. Weng, Yan-Hao Chen, C. Kao","doi":"10.1109/ECTC.2019.00265","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00265","url":null,"abstract":"Thermocompression bonding (TCB) process is now being adopted for high density interconnections but the necessity of applying force and heat causes a lot of problems, such as warpage-induced defects, cracking of delicate chips and thermal drift. To address the above issues, we proposed a novel bonding technique called microfluidic electroless interconnection (MELI) process to directly fabricate interconnection between Cu pillars at the temperature below 80°C and without applying any pressure on the chips. It has been shown in our previous researches that the MELI process using electroless Ni and electroless Au could bond vertical interconnection under controlled flow. In order to extend the application range of the MELI to fine pitch, in this study we analyze the feasibility of selective electroless deposition in microchannel by adding stabilizers into electroless Ni and electroless Au solution. Electroless plating can provide a uniform conformal coating on all parts of the surface that have been catalytically activated. However, the extended coating from the sides of the Cu pillar bump shortens the interconnect pitch, which may cause the risk of bridging. In this paper, we successfully achieve selective electroless Ni plating in microchannel by adding 1.5 ppm of lead acetate into the plating bath. As for electroless Au plating, selective deposition in the microchannel can be accomplished by narrowing the gap. In summary, the innovative MELI process provides a low-temperature and pressureless fine pitch bonding technique.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"363 1","pages":"1729-1734"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76560486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Enhanced Performance of Laser-Assisted Bonding with Compression (LABC) Compared with Thermal Compression Bonding (TCB) Technology 激光辅助压缩键合(LABC)与热压缩键合(TCB)技术性能的比较
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00037
Kwang-Seong Choi, Y. Eom, Seok-Hwan Moon, Jiho Joo, leeseul Jeong, Kwangjoo Lee, Jung Hak Kim, Ju Hyeon Kim, G. Yoon, Kwang-Hee Lee, Chul-Hee Lee, Geun-Sik Ahn, Moo-Sup Shim
{"title":"Enhanced Performance of Laser-Assisted Bonding with Compression (LABC) Compared with Thermal Compression Bonding (TCB) Technology","authors":"Kwang-Seong Choi, Y. Eom, Seok-Hwan Moon, Jiho Joo, leeseul Jeong, Kwangjoo Lee, Jung Hak Kim, Ju Hyeon Kim, G. Yoon, Kwang-Hee Lee, Chul-Hee Lee, Geun-Sik Ahn, Moo-Sup Shim","doi":"10.1109/ECTC.2019.00037","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00037","url":null,"abstract":"A LABC (Laser-Assisted Bonding with Compression) bonder and NCF (Non-Conductive Film) were developed to increase the productivity of the bonding process for the advanced microelectronic packaging technology. The design features of a LABC make its UPH above 1,000. The NCF was applied to both of LAB and TCB (Thermal Compression Bonding Technology). The 780µm-thick daisy chain top and bottom chips with the minimum pitch of 30µm and bump number of about 27,000 were prepared and tested to verify the LABC and NCF technology. The effects of the laser power on the joints quality after the LABC bonding process were investigated and compared with the joints formed by the TCB technology. Finally, the SAT (Scanning Acoustic Tomography) images of the test vehicles before and after the TCO (Pressurized oven) were observed to check the voids in the NCF after the LABC bonding process.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"68 1","pages":"197-203"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89083138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Sub-10µm Pitch Hybrid Direct Bond Interconnect Development for Die-to-Die Hybridization 用于模对模杂交的10微米间距混合直接键合互连开发
2019 IEEE 69th Electronic Components and Technology Conference (ECTC) Pub Date : 2019-05-28 DOI: 10.1109/ECTC.2019.00103
John P. Mudrick, Jonatan A. Sierra-Suarez, M. Jordan, T. Friedmann, R. Jarecki, M. Henry
{"title":"Sub-10µm Pitch Hybrid Direct Bond Interconnect Development for Die-to-Die Hybridization","authors":"John P. Mudrick, Jonatan A. Sierra-Suarez, M. Jordan, T. Friedmann, R. Jarecki, M. Henry","doi":"10.1109/ECTC.2019.00103","DOIUrl":"https://doi.org/10.1109/ECTC.2019.00103","url":null,"abstract":"Direct bond interconnect (DBI) processes enable chip to chip, low resistivity electrical connections for 2.5-D scaling of electrical circuits and heterogenous integration. This work describes SiO2/Cu DBI technology with Cu interconnect performance investigated over a range of inter-die Cu gap heights and post-bond annealing temperatures. Chemical mechanical polishing (CMP) generates wafers with a controlled Cu recess relative to the SiO2 surface, yielding die pairs with inter-die Cu gap heights ranging between 9 and 47 nm. Bonded die with different gap heights show similar per-connection resistance after annealing at 400 degrees Celsius but annealing at lower temperatures between 250 and 350 degrees Celsius results in failing or high-resistance interconnects with intermediate gaps showing lowest resistance. Cross-section scanning electron microscope (SEM) image analysis shows that the microstructure is largely independent of post-bond annealing temperature, suggesting that the temperature behavior is due to nanoscale scale interfacial effects not observable by SEM. The bond strength is affirmed by successful step-wise mechanical and chemical removal of the handle silicon layer to reveal metal from both die. This work demonstrates a 2.5-D integration method using a 3 micron Cu DBI process on a 7.5 micron pitch with electrical contacts ranging between 3.8 and 4.8 Ohms per contact plug.","PeriodicalId":6726,"journal":{"name":"2019 IEEE 69th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"648-654"},"PeriodicalIF":0.0,"publicationDate":"2019-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90061349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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