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2014 International Semiconductor Conference (CAS)最新文献

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Gigahertz Resonance at gold surface as a tool for ions study under polarized electric fields 在极化电场下，金表面的千兆赫共振作为离子研究的工具
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966388
C. Manole, C. Pȋrvu, I. Demetrescu
{"title":"Gigahertz Resonance at gold surface as a tool for ions study under polarized electric fields","authors":"C. Manole, C. Pȋrvu, I. Demetrescu","doi":"10.1109/SMICND.2014.6966388","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966388","url":null,"abstract":"The Gigahertz Resonance at a gold nano-layer, coupled with an Electrochemical system allowed the investigation of the interfacial interaction of ions at the gold/aqueous solution boundary. The implications of the ion behavior under polarized electric fields are discussed. The study of non-Faradaic and Faradaic currents open the path for increased versatility as sensing device.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"16 1","pages":"51-54"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77105262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Immobilization of Alkaline phosphatase on biopolymeric support 碱性磷酸酶在生物聚合物载体上的固定化
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966386
A. E. Berteanu, L. Tcacenco, B. Daniela Ionita, I. Demetrescu
{"title":"Immobilization of Alkaline phosphatase on biopolymeric support","authors":"A. E. Berteanu, L. Tcacenco, B. Daniela Ionita, I. Demetrescu","doi":"10.1109/SMICND.2014.6966386","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966386","url":null,"abstract":"This study is an investigation to obtain new nanocomposites materials, composed of products based on alkaline phosphatase and natural biopolymers, collagen and chitosan gel. The scaffolds were characterized by Fourier transform infrared spectroscopy (FT-IR), and water adsorption. The equilibrium Swelling was determined. The results obtained are promissing regarding the use of these supports to alkaline phosphatase (ALP) immobilization, the enzyme having a large practical use, especially in different skin tissue engineering.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"44 1","pages":"43-46"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74457678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Acoustic wave sensing devices and their LTCC packaging 声波传感装置及其LTCC封装
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966418
I. Giangu, V. Buiculescu, G. Konstantinidis, K. Szaciłowski, A. Stefanescu, F. Bechtold, K. Pilarczyk, A. Stavrinidis, P. Kwolek, G. Stavrinidis, J. Mech, A. Muller
{"title":"Acoustic wave sensing devices and their LTCC packaging","authors":"I. Giangu, V. Buiculescu, G. Konstantinidis, K. Szaciłowski, A. Stefanescu, F. Bechtold, K. Pilarczyk, A. Stavrinidis, P. Kwolek, G. Stavrinidis, J. Mech, A. Muller","doi":"10.1109/SMICND.2014.6966418","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966418","url":null,"abstract":"The paper presents the relevant results of manufacturing LTCC packages intended for chip assembly as well as the RF behavior of SAW and FBAR structures used as temperature and, respectively, humidity sensing devices. Packaged SAW-based temperature sensors were characterized in a cryostat set-up, while the packaged FBAR-based humidity sensors were measured in a small enclosure with controlled humidity. Linear behaviour of the frequency shift vs. temperature and, respectively, relative humidity was evidenced.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"43 1","pages":"147-150"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84139970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ordered shapes of the CVD SiO2 evinced by wet etching 湿法蚀刻制备CVD SiO2的有序形状
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966410
A. Baracu, R. Pascu, F. Craciunoiu
{"title":"Ordered shapes of the CVD SiO2 evinced by wet etching","authors":"A. Baracu, R. Pascu, F. Craciunoiu","doi":"10.1109/SMICND.2014.6966410","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966410","url":null,"abstract":"As we know, both grown and deposited SiO<sub>2</sub> is considered an amorphous material. A lot of experiments based on the silicon dioxide etching showed a series of micro and nano-formations which lead to a polycrystalline structure assumption. This paper is focused on the “crystalline” form of the SiO<sub>2</sub> after a wet etching in NH<sub>4</sub>F:CH<sub>3</sub>COOH solution. In order to modify the selectivity of the mixture, we have tested 3 different concentrations. There were performed a lot of investigations using SEM, AFM and Optical microscopy.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"11 1","pages":"121-124"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90989032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robustness of the floating-gate technique in a very low-noise environment 极低噪声环境下浮动门技术的鲁棒性
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966463
J. Postel-Pellerin, G. Micolau, C. Abbas, P. Chiquet, A. Cavaillou
{"title":"Robustness of the floating-gate technique in a very low-noise environment","authors":"J. Postel-Pellerin, G. Micolau, C. Abbas, P. Chiquet, A. Cavaillou","doi":"10.1109/SMICND.2014.6966463","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966463","url":null,"abstract":"In this paper we present the development of a cheap test bench to make the acquisition of very low leakage currents in Non-volatile memories. This test bench is embedded in a very particular low-noise environment to reduce ambient vibrations and electromagnetic perturbations. We will principally discuss the robustness of the full experiment concerning the acquisition conditions (integration time and number of measurements, choice of applied biases). Finally we will present the extraction steps and the resulting leakage current, below every direct measurement.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"2014 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87751115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wearable health monitors with TransferJet data communications and inductive power transfer 具有TransferJet数据通信和感应功率传输的可穿戴健康监视器
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966453
Nicolai Dobrostomat, Gheorghe Turcan, M. Neag
{"title":"Wearable health monitors with TransferJet data communications and inductive power transfer","authors":"Nicolai Dobrostomat, Gheorghe Turcan, M. Neag","doi":"10.1109/SMICND.2014.6966453","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966453","url":null,"abstract":"The health monitoring system presented here consists of a wearable device- a wristband that hosts a set of biomedical sensors connected to a central node implemented by a microcontroller able to control and collect data from them, pre-processes and stores data in a local memory, then transfers them to an USB-based TransferJet Adapter- and a base-station hosted by a laptop or smart phone, that receives the data by its own USB-based TransferJet Adapter, processes them and communicates the results to the user and/or directly to health-care professionals. The TransferJet Adapters employ UWB technology to transfer data in very short bursts, over a range of only a few centimeters. Thus, snooping is practically impossible and the average power consumption can be kept low. The required proximity of the wearable device to the base-station during data transfers is used to implement an inductive power transfer system, which supplies the wearable device during that period, which coincides with the maximum power surge.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"48 1","pages":"259-262"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88908728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A CMOS 0.18μm 64×64 single photon image sensor with in-pixel 11b time-to-digital converter 一种CMOS 0.18μm 64×64单光子图像传感器，具有像素内11b时间-数字转换器
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966414
I. Vornicu, R. Carmona-Galán, Á. Rodríguez-Vázquez
{"title":"A CMOS 0.18μm 64×64 single photon image sensor with in-pixel 11b time-to-digital converter","authors":"I. Vornicu, R. Carmona-Galán, Á. Rodríguez-Vázquez","doi":"10.1109/SMICND.2014.6966414","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966414","url":null,"abstract":"The design and characterization of a CMOS 64×64 single-photon avalanche-diode (SPAD) array with in-pixel 11b time-to-digital converter (TDC) is presented. It is targeted for time-resolved imaging, in particular 3D imaging. The achieved pixel pitch is 64μm with a fill factor of 3.5%. The chip was fabricated in a 0.18μm standard CMOS technology and implements a double functionality: Time-of-Flight estimation and photon counting. The imager features a programmable time resolution for the array of TDCs from 625ps down to 145ps. The measured accuracy of the minimum time bin is lower than ±1LSB DNL and 1.7LSB INL. The TDC jitter over the full dynamic range is less than 1LSB. Die-to-die process variation and temperature are discarded by auto-calibration. Fast quenching/restore circuit on each pixel lowers the power consumption by limiting the avalanche currents. Time gatedoperation is possible as well.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"15 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82636896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
3D modelling of a thermopile-based SOI CMOS thermal wall shear stress sensor 基于热电堆的SOI CMOS热壁剪切应力传感器的三维建模
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966459
C. Falco, A. De Luca, S. Sarfraz, I. Haneef, J. Coull, S. Z. Ali, F. Udrea
{"title":"3D modelling of a thermopile-based SOI CMOS thermal wall shear stress sensor","authors":"C. Falco, A. De Luca, S. Sarfraz, I. Haneef, J. Coull, S. Z. Ali, F. Udrea","doi":"10.1109/SMICND.2014.6966459","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966459","url":null,"abstract":"This paper presents a multiphysic 3-D model of an SOI CMOS MEMS thermal wall shear stress sensor obtained using “Comsol Multiphysics”. It includes all the physical domains involved and their interaction. After a brief introduction, the device is presented and its working principle explained. The numerical model and the validation process are then described.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"277-280"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85566548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measuring the frequency response of poly-phase filters using standard laboratory equipment 使用标准实验室设备测量多相滤波器的频率响应
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966449
Paul Martari, I. Câmpanu, T. Salajan, M. Neag, M. Topa
{"title":"Measuring the frequency response of poly-phase filters using standard laboratory equipment","authors":"Paul Martari, I. Câmpanu, T. Salajan, M. Neag, M. Topa","doi":"10.1109/SMICND.2014.6966449","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966449","url":null,"abstract":"This paper presents an effective technique for generating pairs of in-quadrature sinusoidal signals by using only standard signal generators and oscilloscopes. The proposed method is particularly well suited for measuring the magnitude characteristic of poly-phase filters. An example is presented in some detail: the characterization of a fully differential poly-phase filter integrated in a standard 0.18um CMOS process, which operates in the MHz range. The measurements are in good agreement with the simulation results.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"9 1","pages":"243-246"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90665096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of monolayer-bilayer composite graphene structures 单层-双层复合石墨烯结构的研究
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966407
A. Zubarev
{"title":"Investigation of monolayer-bilayer composite graphene structures","authors":"A. Zubarev","doi":"10.1109/SMICND.2014.6966407","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966407","url":null,"abstract":"I investigated electron transmission through graphene composite periodic structures with monolayer and bilayer graphene regions. In this paper, I analysed 1-dimensional symmetric and asymmetric composite structures. Graphene periodic composite structures represent good electronic filters, which permits electron transmission only for restricted energy and angle values. Using the total transfer matrix method I determined energy bands created in this composite. This fact can be used in multi-logical circuits or for alimentation of nanodevices.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"37 1","pages":"109-112"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76903343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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