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Monitoring on short-term the corrosion processes of three different metal-ceramic crowns 三种不同金属陶瓷冠的短期腐蚀过程监测
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966403
M. Andrei, G. Buica, M. Burlibașa, D. Gheorghe, C. Pȋrvu
{"title":"Monitoring on short-term the corrosion processes of three different metal-ceramic crowns","authors":"M. Andrei, G. Buica, M. Burlibașa, D. Gheorghe, C. Pȋrvu","doi":"10.1109/SMICND.2014.6966403","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966403","url":null,"abstract":"The paper aims on microfabrication and corrosion processes evaluation of three different metal-ceramic crowns with CoCrMo substructures. The samples have different exposed metal surface and the electrochemical investigations are Tafel analysis and Electrochemical Impedance Spectroscopy (EIS).","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"5 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79066841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Trapping centers in heavy ion irradiated silicon 重离子辐照硅中的俘获中心
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966411
C. Palade, S. Lazanu, M. Ciurea
{"title":"Trapping centers in heavy ion irradiated silicon","authors":"C. Palade, S. Lazanu, M. Ciurea","doi":"10.1109/SMICND.2014.6966411","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966411","url":null,"abstract":"Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain field produced by Bi ions in Si is two times more intense than in Si irradiated with I ions, and effects the Gaussian broadening of trapping levels and the temperature dependence of cross sections.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"32 1","pages":"125-128"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75184938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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