发布求助
文献互助 智能选刊 最新文献

2014 International Semiconductor Conference (CAS)最新文献

筛选
英文 中文
Influence of the preparation method on the morpho-structural and optical properties of bismuth oxide thin films 制备方法对氧化铋薄膜形态结构和光学性能的影响
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966394
S. Condurache-Bota, C. Constantinescu, M. Praisler, R. Gavrila, N. Țigău, C. Gheorghieș
{"title":"Influence of the preparation method on the morpho-structural and optical properties of bismuth oxide thin films","authors":"S. Condurache-Bota, C. Constantinescu, M. Praisler, R. Gavrila, N. Țigău, C. Gheorghieș","doi":"10.1109/SMICND.2014.6966394","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966394","url":null,"abstract":"Bismuth oxide thin films are investigated. Two oxidation methods are compared: thermal oxidation in air and pulsed laser ablation (PLD) in oxygen atmosphere of bismuth targets, respectively. It is found that PLD-prepared films have simpler structure, more uniform morphology and slightly lower refractive index than those prepared by thermal oxidation.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"32 1","pages":"69-72"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81129403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stripline-fed LTCC microstrip patch antenna for 35 GHz applications 带状馈电LTCC微带贴片天线35ghz应用
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966424
A. Bunea, D. Neculoiu, M. Lahti, T. Vaha-Heikkila
{"title":"Stripline-fed LTCC microstrip patch antenna for 35 GHz applications","authors":"A. Bunea, D. Neculoiu, M. Lahti, T. Vaha-Heikkila","doi":"10.1109/SMICND.2014.6966424","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966424","url":null,"abstract":"This paper presents the design, electromagnetic simulation and experimental results of a 35 GHz microstrip patch antenna with four parasitic patches. The structure was designed for a six tape Low Temperature Co-Fired Ceramics process (LTCC). The antenna element is fed by a stripline, taking advantage of the 3D vertical integration possibilities of the LTCC technology. The measured working band (for |S11| <; - 10 dB) is between 34.48-36.39 GHz. The simulated directivity at 35 GHz is of 8.14 dBi. The compact size of the antenna element (6.24 × 6.15 mm2) and the stripline feed offer the possibility of building large arrays and integrating them in a LTCC system-in-package approach.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"305 1","pages":"167-170"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76495894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Simulation of membrane processes with applications in transport and adsorption of nitrate ions 模拟膜过程及其在硝酸盐离子迁移和吸附中的应用
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966466
D. Pascu, O. Nedelcu, A. Nechifor, M. Segarceanu
{"title":"Simulation of membrane processes with applications in transport and adsorption of nitrate ions","authors":"D. Pascu, O. Nedelcu, A. Nechifor, M. Segarceanu","doi":"10.1109/SMICND.2014.6966466","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966466","url":null,"abstract":"This paper represents the answer to many challenges in terms of numerical models for the transport of pollutants in drinking water. Due to these reasons this paper represents a particular methodology for estimating the velocity and dispersion coefficients. The aqueous solution transport and adsorption was performed using the COMSOL mathematical program.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"15 1","pages":"299-302"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82982206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films 脉冲激光沉积AlN:Si薄膜中电荷输运机制的表征
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966404
I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu
{"title":"Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films","authors":"I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu","doi":"10.1109/SMICND.2014.6966404","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966404","url":null,"abstract":"AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"45 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89888278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-chip 500μA dual-chain Dickson charge pump optimized for NMOS LDO supply 片上500μA双链Dickson电荷泵优化NMOS LDO供电
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966443
Florin Bîzîitu, M. Serban, Cristian Murtaza
{"title":"On-chip 500μA dual-chain Dickson charge pump optimized for NMOS LDO supply","authors":"Florin Bîzîitu, M. Serban, Cristian Murtaza","doi":"10.1109/SMICND.2014.6966443","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966443","url":null,"abstract":"The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"33 1","pages":"225-228"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80200351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermographic analysis with enhanced emissivity 增强发射率的热成像分析
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966462
D. Varsescu, V. Ilian, M. Bazu
{"title":"Thermographic analysis with enhanced emissivity","authors":"D. Varsescu, V. Ilian, M. Bazu","doi":"10.1109/SMICND.2014.6966462","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966462","url":null,"abstract":"A FLIR SC5000 IR thermovision camera was used for analyzing the temperature distribution on the gold surface of the test devices (Schottky diode). The goal was to estimate the values of the temperature in various areas on the surface of the test device. In order to increase the emissivity, the surface was covered with a spray paint, a solution allowing to obtaining better estimations of the surface temperature.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"13 1","pages":"283-286"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88437001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Capacitance of back-gated nanowires in various dielectric embeddings 背控纳米线在不同介质嵌入中的电容
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966458
G. Boldeiu, V. Moagar-Poladian, T. Sandu
{"title":"Capacitance of back-gated nanowires in various dielectric embeddings","authors":"G. Boldeiu, V. Moagar-Poladian, T. Sandu","doi":"10.1109/SMICND.2014.6966458","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966458","url":null,"abstract":"The effect of dielectric embedding on the capacitance of back-gated nanowires can be accurately captured as an effective dielectric constant that depends solely on the difference between the nanowire-gate distance and the dielectric thickness. When used for sensing purposes this property provides the maximum sensitivity within a range of two diameters around the center of the nanowire.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81908679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Power supply architecture for high temperature chuck systems 高温卡盘系统的电源结构
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966432
L. Teodorescu, A. Gheorghe, F. Draghici, G. Brezeanu, I. Rusu
{"title":"Power supply architecture for high temperature chuck systems","authors":"L. Teodorescu, A. Gheorghe, F. Draghici, G. Brezeanu, I. Rusu","doi":"10.1109/SMICND.2014.6966432","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966432","url":null,"abstract":"A supply technique used for an electric heating resistor mounted inside a thermal chuck system which supports wafer testing in high temperatures domain is described in this paper. Following this technique, a platform for low noise wafer measurements may be develop.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"92 1","pages":"193-196"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76370208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A dual-voltage hybrid NEMS-CMOS low-power scheme 一种双电压混合NEMS-CMOS低功耗方案
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966438
M. Tache, Valeriu Beiu, T. Liu
{"title":"A dual-voltage hybrid NEMS-CMOS low-power scheme","authors":"M. Tache, Valeriu Beiu, T. Liu","doi":"10.1109/SMICND.2014.6966438","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966438","url":null,"abstract":"In this paper we propose a dual-voltage hybrid NEMS-CMOS scheme to reduce dynamic power consumption. The scheme uses a smaller input/output voltage to propagate information, and a larger voltage to drive (control) the NEMS. CMOS amplifiers are used to interface these two voltages. Gates with a large(r) number of inputs perform better, which matches the optimal NEMS circuit topology. Simulations for a 4-input Boolean function show that power reductions can be significant.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"211-214"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78790707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability enhanced SRAM bit-cells 可靠性增强的SRAM位单元
2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI: 10.1109/SMICND.2014.6966444
Valeriu Beiu, M. Tache, F. Kharbash
{"title":"Reliability enhanced SRAM bit-cells","authors":"Valeriu Beiu, M. Tache, F. Kharbash","doi":"10.1109/SMICND.2014.6966444","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966444","url":null,"abstract":"Noises and variations are ubiquitous, but are ill-understood and in most cases analyzed simplistically, leading to substantial overdesign costs. A novel reliability-centric design method based on unconventionally sizing transistors has been suggested lately. In this paper our aim is to design, simulate, and compare the benefits of unconventional sizing when applied to SRAM bit-cells. The unconventionally sized SRAM bit-cells achieve higher SNMs, having the potential to work correctly at supply voltages lower than those achieved using classically sized SRAM bit-cells.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"112 1","pages":"229-232"},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75861819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信