{"title":"片上500μA双链Dickson电荷泵优化NMOS LDO供电","authors":"Florin Bîzîitu, M. Serban, Cristian Murtaza","doi":"10.1109/SMICND.2014.6966443","DOIUrl":null,"url":null,"abstract":"The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"33 1","pages":"225-228"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"On-chip 500μA dual-chain Dickson charge pump optimized for NMOS LDO supply\",\"authors\":\"Florin Bîzîitu, M. Serban, Cristian Murtaza\",\"doi\":\"10.1109/SMICND.2014.6966443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"33 1\",\"pages\":\"225-228\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2014.6966443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The proposed circuit is a dual-chain Dickson type charge pump making use of both active and passive charge transfer switches in order to achieve a compromise between power efficiency, circuit complexity and device reliability. The charge pump is capable of sourcing up to 500μA at 10V output voltage for supplying the error amplifiers of two NMOS Low Drop Out (LDO) linear regulators as part of a high integration automotive IC.