脉冲激光沉积AlN:Si薄膜中电荷输运机制的表征

2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI:10.1109/SMICND.2014.6966404

I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu

{"title":"脉冲激光沉积AlN:Si薄膜中电荷输运机制的表征","authors":"I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu","doi":"10.1109/SMICND.2014.6966404","DOIUrl":null,"url":null,"abstract":"AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"45 1","pages":"103-106"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films\",\"authors\":\"I. Minkov, S. Simeonov, A. Szekeres, Z. Fogarassy, G. Socol, C. Ristoscu, I. Mihăilescu\",\"doi\":\"10.1109/SMICND.2014.6966404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"45 1\",\"pages\":\"103-106\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2014.6966404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用脉冲激光沉积(PLD)技术，在0.1或10 Pa的氮气环境中，在p-Si衬底上沉积了掺杂Si的AlN薄膜。制备了集成PLD AlN:Si薄膜的MIS结构，并测量了其电流-电压、I-V和1 MHz C-V特性。对这些MIS结构特性的分析揭示了铝空位在薄膜中电荷输运中的重要作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterisation of the charge transport mechanism in pulsed laser deposited AlN:Si films

AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge transport through the films.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 International Semiconductor Conference (CAS)

自引率

0.00%

发文量