{"title":"湿法蚀刻制备CVD SiO2的有序形状","authors":"A. Baracu, R. Pascu, F. Craciunoiu","doi":"10.1109/SMICND.2014.6966410","DOIUrl":null,"url":null,"abstract":"As we know, both grown and deposited SiO<sub>2</sub> is considered an amorphous material. A lot of experiments based on the silicon dioxide etching showed a series of micro and nano-formations which lead to a polycrystalline structure assumption. This paper is focused on the “crystalline” form of the SiO<sub>2</sub> after a wet etching in NH<sub>4</sub>F:CH<sub>3</sub>COOH solution. In order to modify the selectivity of the mixture, we have tested 3 different concentrations. There were performed a lot of investigations using SEM, AFM and Optical microscopy.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"11 1","pages":"121-124"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ordered shapes of the CVD SiO2 evinced by wet etching\",\"authors\":\"A. Baracu, R. Pascu, F. Craciunoiu\",\"doi\":\"10.1109/SMICND.2014.6966410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As we know, both grown and deposited SiO<sub>2</sub> is considered an amorphous material. A lot of experiments based on the silicon dioxide etching showed a series of micro and nano-formations which lead to a polycrystalline structure assumption. This paper is focused on the “crystalline” form of the SiO<sub>2</sub> after a wet etching in NH<sub>4</sub>F:CH<sub>3</sub>COOH solution. In order to modify the selectivity of the mixture, we have tested 3 different concentrations. There were performed a lot of investigations using SEM, AFM and Optical microscopy.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"11 1\",\"pages\":\"121-124\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2014.6966410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2014.6966410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ordered shapes of the CVD SiO2 evinced by wet etching
As we know, both grown and deposited SiO2 is considered an amorphous material. A lot of experiments based on the silicon dioxide etching showed a series of micro and nano-formations which lead to a polycrystalline structure assumption. This paper is focused on the “crystalline” form of the SiO2 after a wet etching in NH4F:CH3COOH solution. In order to modify the selectivity of the mixture, we have tested 3 different concentrations. There were performed a lot of investigations using SEM, AFM and Optical microscopy.
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