2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)最新文献_第4页

Optimizing ULK film properties to enable BEOL integration with TDDB reliability 优化ULK薄膜性能，使BEOL与TDDB可靠性集成

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325597

E. T. Ryan, D. Priyadarshini, Stephen M. Gates, Hosadurga Shobha, James Hsueh-Chung Chen, Kumar Virwani, Anita Madan, E. Adams, Elbert E. Huang, E. Liniger, D. Collins, M. Stolfi, Kang Sub Yim, Alexandros T. Demos, Alfred Grill

{"title":"Optimizing ULK film properties to enable BEOL integration with TDDB reliability","authors":"E. T. Ryan, D. Priyadarshini, Stephen M. Gates, Hosadurga Shobha, James Hsueh-Chung Chen, Kumar Virwani, Anita Madan, E. Adams, Elbert E. Huang, E. Liniger, D. Collins, M. Stolfi, Kang Sub Yim, Alexandros T. Demos, Alfred Grill","doi":"10.1109/IITC-MAM.2015.7325597","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325597","url":null,"abstract":"Increasing circuit density in multilevel back-end-of line (BEOL) interconnects is necessary to improve integrated circuit performance and area scaling. Ultra low-k (ULK) dielectrics are used to minimize capacitance for lower power consumption and better capacitance-resistance (RC) performance. However, these materials pose integration and reliability challenges, which have limited our ability to scale the dielectric constant lower.1 Minimizing porosity, maximizing carbon content, and altering how carbon is bonded in porous SiCOH films reduces plasma-induced damage (PID) to the ULK and improves TDDB reliability, but these improvement must be balanced by maintaining other film properties such as elastic modulus. This paper describes one technique to achieve this combination of high carbon content and low porosity to allow k scaling while meeting integration and reliability requirements.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"80 8 1","pages":"349-352"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87990865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths 从几纳米到亚微米深度的半导体结构的纳米尺度三维纳米力学成像

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325609

O. Kolosov, F. Dinelli, A. Robson, A. Krier, M. Hayne, V. Fal’ko, M. Henini

引用次数: 1

Numerical simulation of nano-indentation induced fracture of low-k dielectric thin films using the cube corner indenter 利用立方角压头对低k介电薄膜的纳米压痕断裂进行数值模拟

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325630

H. Zahedmanesh, K. Vanstreels, Mario Gonzalez

引用次数: 3

Copper-copper direct bonding: Impact of grain size 铜-铜直接键合:晶粒尺寸的影响

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325657

P. Gondcharton, B. Imbert, L. Benaissa, M. Verdier

引用次数: 3

Process development of replacement metal gate Tungsten chemical mechanical polishing on 14nm technology node and beyond 14nm及以上节点替代金属栅钨化学机械抛光工艺开发

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325634

J. C. Lin, H. Liu, W. Lin, C. -. Lin, T. Hung, K. R. Li, J. F. Lin, J. Y. Wang, C. C. Liu, J. Y. Wu

{"title":"Process development of replacement metal gate Tungsten chemical mechanical polishing on 14nm technology node and beyond","authors":"J. C. Lin, H. Liu, W. Lin, C. -. Lin, T. Hung, K. R. Li, J. F. Lin, J. Y. Wang, C. C. Liu, J. Y. Wu","doi":"10.1109/IITC-MAM.2015.7325634","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325634","url":null,"abstract":"The control of gate height uniformity, especially within-die gate height uniformity, and metal gate surface properties of 14nm technology node replacement metal gate (RMG) chemical mechanical polishing is important for 14nm high-k metal gate (HKMG) process. Good within-die uniformity would benefit for the following Tungsten etching back process(WEB) to have a uniform within-die etching depth, and proper post CMP Tungsten gate surface properties would generate a thinner Tungsten oxide surface to reduce WEB process loading. This study demonstrated the possibility of Tungsten gate CMP(WGCMP) to obtain good within-die gate height uniformity by selection of slurry and proper Tungsten gate surface by post buffing step CMP treatment. Due to high hardness of Tungsten, hardness of polishing pad and abrasive of slurry selection should be not a gap for micro scratch improvement, what the performance focus would put on within-die uniformity and post CMP Tungsten surface properties. In this study, the first result showed the control of erosion was important for within-die gate height uniformity. The criteria of slurry selection for WGCMP were higher Tungsten removal rate and lower oxide removal rate which especially resulted in lower pattern density area of erosion. And the second result showed Chemical-A polish time of post-Tungsten buffing CMP would dominate the Tungsten surface properties and influence WEB behavior.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"233 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76975770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments 在FIB铣削过程中，Pt/NiO/Pt电阻性记忆初级细胞的原位电学表征:迈向纳米细丝电断层扫描的一步

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325625

C. Guedj, G. Auvert, E. Martinez

引用次数: 1

Aluminum-capped copper bond pads for ultrasonic heavy copper wire-bonding on power devices 用于电力设备上超声波重铜线连接的铝盖铜焊垫

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325658

David Gross, Sabine Haag, M. Reinold, M. Schneider-Ramelow, K. Lang

引用次数: 2

Plasma etch challenges at 14nm and beyond technology nodes in the BEOL BEOL中14nm及以上技术节点的等离子蚀刻挑战

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325604

P. Brun, F. Bailly, M. Guillermet, E. Aparico, N. Possémé

引用次数: 3

Advanced integrated metallization enables 3D-IC TSV scaling 先进的集成金属化使3D-IC TSV缩放

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325620

Jengyi Yu, S. Gopinath, P. Nalla, Matthew Thorum, L. Schloss, D. M. Anjos, Prashant Meshram, G. Harm, Joe Richardson, T. Mountsier

引用次数: 8

Nickel silicide for source-drain contacts from ALD NiO films 硅化镍用于ALD NiO薄膜的源极-漏极触点

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325617

V. Pore, E. Tois, R. Matero, S. Haukka, M. Tuominen, J. Woodruff, Brennan Milligan, F. Tang, M. Givens

引用次数: 1