2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)最新文献_第5页

Reliability study of liner/barrier/seed options for via-middle TSV's with 3 micron diameter and below 直径3微米及以下的中通径TSV衬垫/屏障/种子选择的可靠性研究

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325592

Yunlong Li, S. Van Huylenbroeck, P. Roussel, M. Brouri, S. Gopinath, D. M. Anjos, Matthew Thorum, Jengyi Yu, G. Beyer, E. Beyne, K. Croes

{"title":"Reliability study of liner/barrier/seed options for via-middle TSV's with 3 micron diameter and below","authors":"Yunlong Li, S. Van Huylenbroeck, P. Roussel, M. Brouri, S. Gopinath, D. M. Anjos, Matthew Thorum, Jengyi Yu, G. Beyer, E. Beyne, K. Croes","doi":"10.1109/IITC-MAM.2015.7325592","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325592","url":null,"abstract":"In high aspect ratio TSV's, the step coverage (conformality) of liner, barrier and seed is critical for both the integration and reliability. If the conformality of a deposition technique is improved, the required thickness to be deposited on the field of the wafer can be reduced. Consequently, less material needs to be removed by CMP on the field, which reduces the manufacturing cost. In this paper, the reliability of two liner/barrier/seed options, which were successfully integrated into via-middle TSV's with a diameter of 3 micron and an aspect ratio (AR) of 17 is investigated. Both controlled ramp rates (IVctri) as well as standard Time Dependent Dielectric Breakdown (TDDB) at 100°C were employed as electrical testing methods to investigate the dielectric and barrier reliability properties of the studied systems. The first studied system consists of a non-conformal CVD O3 TEOS liner, an ALD TiN barrier and a PVD Cu seed. The second studied system employs a conformal ALD liner, a thermal ALD WN barrier and an ELD NiB seed. Both studied systems show excellent reliability properties. Scalable highly conformal liners are more sensitive to local field enhancement at the high fields applied during highly accelerated tests which are far above normal operation conditions. Their performance at lower fields, however, still meets standard reliability specifications.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"1 1","pages":"327-330"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84779408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Robust TiN HM process to overcome under etch issue for SAV scheme on 14nm node 稳健的TiN HM工艺克服了14nm节点SAV方案的腐蚀问题

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325602

Tzu-Hao Fu, Y. Ke, Shi-Chun Tsai, Chun-Ling Lin, Kuo-Wei Chen, M. Huang, Gary Cho, San-Fu Lin, Ting-Jun Wang, A. Cheng

{"title":"Robust TiN HM process to overcome under etch issue for SAV scheme on 14nm node","authors":"Tzu-Hao Fu, Y. Ke, Shi-Chun Tsai, Chun-Ling Lin, Kuo-Wei Chen, M. Huang, Gary Cho, San-Fu Lin, Ting-Jun Wang, A. Cheng","doi":"10.1109/IITC-MAM.2015.7325602","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325602","url":null,"abstract":"For advance node such as 14nm technology and beyond, back end of line interconnect has implemented self-aligned via (SAV) schemes for better via-metal short process window [1]. A TiN metal hard mask (MHM) is used for the trench pattern definition, after which via lithography and partial via (PV) etch is performed where the TiN was opened. The via etch condition has very good selectivity so that via is formed in a self-aligned fashion by TiN HM [2]. It is indeed to have significant benefit of via to metal short [3]. However, one of the trade off in SAV scheme is the via under etch that whether or not via can well land on an opened oxide area during PV etch. To define the contact area between via resist hole and opened HM oxide as an effective area for via to open successfully. “Fig. 1” shows the effective area change during process variation due to Via alignment, Via photo resist CD variation (Via ADICD) and post hard mask etch CD variation (AMICD). “Fig. 2” shows the mechanism of this under etch failure mode and typical TEM image from 64nm metal pitch test vehicle. In this work, we try to enlarge the process window by an aggressive AMICD targeting in combining with a higher density TiN material to maintain profile.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"60 9 1","pages":"13-16"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81303516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

TC degradation and root-cause analysis of SACVD BPSG film for robust IC fabrication 稳健集成电路制造用SACVD BPSG薄膜的TC退化及根本原因分析

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325662

Jongwoo Park, Miji Lee, Hanbyul Kang, Donghwan Lee, Jungin Kim, S. Pae

引用次数: 0

Cobalt compatible cleaning solutions for 14nm and beyond 钴兼容的清洁解决方案，14纳米及以上

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325635

K. Courouble, L. Broussous, S. Zoll, K. Haxaire, M. Mellier, G. Druais

引用次数: 0

Morphic atomic switch networks for beyond-Moore computing architectures 超摩尔计算体系结构的形态原子交换网络

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325611

Renato Aguilera, Eleanor Demis, Kelsey S. Scharnhorst, A. Stieg, M. Aono, J. Gimzewski

引用次数: 1

Modeling and analysis of vertical noise coupling between clock tree and channel routing wire in 3D mixed signal integration 三维混合信号集成中时钟树与信道路由线垂直噪声耦合建模与分析

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325631

Shiwei Wang, Yingtao Ding, Huanyu He, Jian-Qiang Lu

引用次数: 1

Atomic oxygen treatment of carbon containing low-k dielectric materials to facilitate manganese silicate barrier formation 原子氧处理含碳低k介电材料，有利于锰硅酸盐阻挡层的形成

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325628

J. Bogan, A. McCoy, C. Byrne, R. O'Connor, G. Hughes

引用次数: 0

Nanocarbon interconnects: Demonstration of properties better than Cu and remaining issues 纳米碳互连:性能优于铜的演示和遗留问题

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325589

Shintaro Sato

引用次数: 2

Cobalt UBM for fine pitch microbump applications in 3DIC 钴UBM用于3DIC中的细间距微凸点应用

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325652

J. Derakhshandeh, I. de Preter, K. Vandersmissen, D. Dictus, L. di Piazza, L. Hou, S. Guerrieri, G. Vakanas, S. Armini, R. Daily, A. Lesniewska, Yannick Vandelaer, M. Van De Peer, J. Slabbekoorn, K. Rebibis, Andy Miller, G. Beyer, E. Beyne

{"title":"Cobalt UBM for fine pitch microbump applications in 3DIC","authors":"J. Derakhshandeh, I. de Preter, K. Vandersmissen, D. Dictus, L. di Piazza, L. Hou, S. Guerrieri, G. Vakanas, S. Armini, R. Daily, A. Lesniewska, Yannick Vandelaer, M. Van De Peer, J. Slabbekoorn, K. Rebibis, Andy Miller, G. Beyer, E. Beyne","doi":"10.1109/IITC-MAM.2015.7325652","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325652","url":null,"abstract":"In this paper we report results and challenges of replacing Cu with Co as UBM (under bump metallization) in microbumps for 3D technology applications. Cobalt has softer and single IMC (intermetallic compounds) and according to calculations using Cobalt as UBM can reduce consumption of UBM material by solder which is attractive for sub 10um pitches of microbumps. However, cobalt oxidizes very fast which results in poor wetting by solder as shown in Figure 1. This Figure shows two SEM images of cross section of 20um (left) and 50um (right) pitches microbumps from IMEC test vehicles where poor solder wetting is observed. It can be seen than in both cases Sn is deformed during TCB (thermo-compression bonding) bonding but due to oxide formation on cobalt bumps there is no reaction between Sn and Co. Such a joints may have weak electrical connection however, it is not suitable for a reliable device. Therefore surface treatment/passivation is required for cobalt bumps.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"1 1","pages":"221-224"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88147364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Low-cost, single-step hybrid bond/barrier films for Cu bondlines in advanced packaging 用于先进封装中铜键线的低成本、单步混合键/障膜

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI: 10.1109/IITC-MAM.2015.7325656

Qiran Xiao, Brian L. Watson, R. Dauskardt

引用次数: 0