纳米碳互连:性能优于铜的演示和遗留问题

Shintaro Sato
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引用次数: 2

摘要

包括石墨烯和碳纳米管(CNTs)在内的纳米碳材料是未来大规模集成电路互连的有前途的候选材料。我们最近展示了低于10纳米宽的石墨烯互连,其电阻率低于相似尺寸的铜。在本文中,我们首先描述了这种石墨烯互连的制造和评估。然后,我们解释了一种新开发的碳纳米管(CNT)过孔和塞的制造工艺,该工艺依赖于将碳纳米管植入亚微米大小的孔中。然后我们指出了实现纳米碳互连需要解决的进一步问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanocarbon interconnects: Demonstration of properties better than Cu and remaining issues
Nanocarbon materials including graphene and carbon nanotubes (CNTs) are promising candidates for future LSI interconnects. We recently demonstrated sub-10-nm-wide graphene interconnects whose resistivity is lower than that of Cu with similar dimensions. In this paper, we first describe the fabrication and evaluation of such graphene interconnects. We then explain a newly-developed fabrication process for carbon nanotube (CNT) vias and plugs, which relies on implantation of CNTs into sub-micrometer-sized holes. We then point out further issues to be addressed for realizing nanocarbon interconnects.
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