BEOL中14nm及以上技术节点的等离子蚀刻挑战

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325604

P. Brun, F. Bailly, M. Guillermet, E. Aparico, N. Possémé

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引用次数: 3

摘要

随着尺寸的不断缩小，金属硬掩膜策略，多孔SiOCH薄膜集成的选择，提出了14nm及以后不可忽视的新问题。从14nm节点的等离子蚀刻角度提出了这些问题和相关的解决方案。

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Plasma etch challenges at 14nm and beyond technology nodes in the BEOL

With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.

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来源期刊

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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