在FIB铣削过程中，Pt/NiO/Pt电阻性记忆初级细胞的原位电学表征:迈向纳米细丝电断层扫描的一步

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325625

C. Guedj, G. Auvert, E. Martinez

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引用次数: 1

摘要

在FIB铣削基本Pt/NiO/Pt电阻性记忆电池时，利用电特性来定位导电通道，并估计纳米丝的尺寸和形状。与高分辨率透射电镜的横断面图像有很好的一致性。这种方法是一种潜在的工具，可以获得亚纳米空间分辨率的导电路径的操作中电断层扫描。

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In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments

Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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