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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials最新文献

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On the current transport across isotype heterojunctions investigated on InP-based BRS-lasers 基于inp的brs激光器跨同型异质结的电流输运研究
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147309
H. Bach, F. Fidorra
{"title":"On the current transport across isotype heterojunctions investigated on InP-based BRS-lasers","authors":"H. Bach, F. Fidorra","doi":"10.1109/ICIPRM.1991.147309","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147309","url":null,"abstract":"An evaluation of the temperature resolved I-V characteristics in connection with corresponding I-V simulations of homojunction and heterojunction test diodes in the high current regime (>1000 A cm/sup -2/), where the minimization of the additional series resistances for the heterodiode is of crucial importance, is presented. Proper design of layer sequence, composition, and growth provides low series resistance for the heterodiode and high turn-on voltage for the homodiode. A detailed analysis is presented of the intrinsic series resistance of the laser heterodiode, which results from two regions: the transition between the upper p-GaInAs contact and the p-InP cladding layers (also valid for the homojunctions), and the transition between the updoped GaInAsP (1.55 mu m) active and lower n-InP buffer layers. In both isotype junctions the inherent band edge discontinuities for the majority carriers are detrimental at high current densities.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"126-129"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90377304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAsP diode lasers with high intrinsic bandwidth 具有高固有带宽的InGaAsP二极管激光器
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147337
J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su
{"title":"InGaAsP diode lasers with high intrinsic bandwidth","authors":"J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su","doi":"10.1109/ICIPRM.1991.147337","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147337","url":null,"abstract":"The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"122 19","pages":"204-207"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91423727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A high speed low capacitance laser structure for integration 一种用于集成的高速低电容激光器结构
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147308
R. Ash, D. Robbins, P. Charles, G. Jones, P. Fell, A. Wood, N. Carr
{"title":"A high speed low capacitance laser structure for integration","authors":"R. Ash, D. Robbins, P. Charles, G. Jones, P. Fell, A. Wood, N. Carr","doi":"10.1109/ICIPRM.1991.147308","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147308","url":null,"abstract":"A laser structure for use at microwave frequencies that has reduced parasitic capacitance and resistance and is suitable for integration with other optoelectronic components is described. The fabrication of two devices is discussed: a 1.3- mu m bulk device with a liquid-phase epitaxy (LPE)-grown active region and an all metalorganic vapor phase epitaxy (MOVPE) 1.55- mu m multiple-quantum-well distributed feedback (DFB) laser. The devices were bonded active side up onto metal carriers for assessment with connections being made using short bond wires to a microstrip line terminated in a 50- Omega load and fed by a shape memory alloy (SMA) launcher. Measurements of light-current characteristics showed threshold currents of 15 mA for 250- mu m-long uncoated lasers and external differential quantum efficiencies up to 25% facet at 25 degrees C for the 1.3- mu m devices. The results of large- and small-signal measurements of the lasers are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"46 1","pages":"122-125"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81043770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An InAlAs/InAs MODFET InAlAs/InAs MODFET
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147396
C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad
{"title":"An InAlAs/InAs MODFET","authors":"C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad","doi":"10.1109/ICIPRM.1991.147396","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147396","url":null,"abstract":"The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"77 1","pages":"385-388"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87437515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine 利用叔丁基膦常压和低压MOVPE生长InP和InGaAsP光电器件材料的贡献
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147294
A. Ougazzaden, R. Mellet, Y. Gao, E. Rao, A. Mircea
{"title":"Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine","authors":"A. Ougazzaden, R. Mellet, Y. Gao, E. Rao, A. Mircea","doi":"10.1109/ICIPRM.1991.147294","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147294","url":null,"abstract":"The realization of 1.3- mu m laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"64-67"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90674185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
EC-V profiling of InP InP的EC-V谱分析
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147360
M. Faur, C. Vargas, M. Goradia
{"title":"EC-V profiling of InP","authors":"M. Faur, C. Vargas, M. Goradia","doi":"10.1109/ICIPRM.1991.147360","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147360","url":null,"abstract":"The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"310-314"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78557675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers InGaAs/InP量子阱热稳定性和互扩散的RTA研究——InGaAs帽层的影响
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147449
J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk
{"title":"RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers","authors":"J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk","doi":"10.1109/ICIPRM.1991.147449","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147449","url":null,"abstract":"A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"179 1","pages":"606-609"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75479008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High performance diffused InGaAs JFETs in OEICs oeic中高性能扩散InGaAs jfet
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147461
C. Mansfield, D. Newson, P. Birdsall, J. Quayle
{"title":"High performance diffused InGaAs JFETs in OEICs","authors":"C. Mansfield, D. Newson, P. Birdsall, J. Quayle","doi":"10.1109/ICIPRM.1991.147461","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147461","url":null,"abstract":"The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"660-663"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72785627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A very wide spectrum superluminescent diode at 1.3 mu m 一个非常宽的光谱超发光二极管在1.3 μ m
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147339
O. Mikami, Y. Noguchi, H. Yasaka
{"title":"A very wide spectrum superluminescent diode at 1.3 mu m","authors":"O. Mikami, Y. Noguchi, H. Yasaka","doi":"10.1109/ICIPRM.1991.147339","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147339","url":null,"abstract":"An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"212-215"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73658511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology 利用InP外延发射技术制备长波长QEICs
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI: 10.1109/ICIPRM.1991.147350
I. Pollentier, P. Demeester, P. van Daele, D. Rondi, G. Glastre, A. Enard, R. Blondeau
{"title":"Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology","authors":"I. Pollentier, P. Demeester, P. van Daele, D. Rondi, G. Glastre, A. Enard, R. Blondeau","doi":"10.1109/ICIPRM.1991.147350","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147350","url":null,"abstract":"The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"268-271"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74018335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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