EC-V profiling of InP

Abstract

The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<>