Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine

Abstract

The realization of 1.3- mu m laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine.<>