一种用于集成的高速低电容激光器结构

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147308

R. Ash, D. Robbins, P. Charles, G. Jones, P. Fell, A. Wood, N. Carr

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引用次数: 2

摘要

描述了一种用于微波频率的激光器结构，该结构具有降低的寄生电容和电阻，并且适合与其他光电元件集成。讨论了两种器件的制作方法:一种是1.3 μ m的具有液相外延(LPE)生长有源区的体器件，另一种是全金属有机气相外延(MOVPE) 1.55 μ m的多量子阱分布反馈(DFB)激光器。设备主动侧朝上连接到金属载体上进行评估，使用短键合线连接到微带线，微带线端接在50 ω负载上，并由形状记忆合金(SMA)发射器馈电。光电流特性的测量表明，250 μ m长无涂层激光器的阈值电流为15 mA, 1.3 μ m器件的外部差分量子效率在25℃时高达25%。给出了激光器的大信号和小信号测量结果

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A high speed low capacitance laser structure for integration

A laser structure for use at microwave frequencies that has reduced parasitic capacitance and resistance and is suitable for integration with other optoelectronic components is described. The fabrication of two devices is discussed: a 1.3- mu m bulk device with a liquid-phase epitaxy (LPE)-grown active region and an all metalorganic vapor phase epitaxy (MOVPE) 1.55- mu m multiple-quantum-well distributed feedback (DFB) laser. The devices were bonded active side up onto metal carriers for assessment with connections being made using short bond wires to a microstrip line terminated in a 50- Omega load and fed by a shape memory alloy (SMA) launcher. Measurements of light-current characteristics showed threshold currents of 15 mA for 250- mu m-long uncoated lasers and external differential quantum efficiencies up to 25% facet at 25 degrees C for the 1.3- mu m devices. The results of large- and small-signal measurements of the lasers are presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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