High performance diffused InGaAs JFETs in OEICs

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147461

C. Mansfield, D. Newson, P. Birdsall, J. Quayle

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Abstract

The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<>

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oeic中高性能扩散InGaAs jfet

讨论了用于垂直集成光电集成电路(OEICs)的高均匀扩散InGaAs jfet的发展。该器件已经集成了PIN二极管和脊波导激光器。讨论了OEIC的制造和OEIC接收机的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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